Datasheet ST1900C52R0L, ST1900C52R0, ST1900C50R3L, ST1900C50R3, ST1900C50R2L Datasheet (International Rectifier)
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D-406
DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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1940A
PHASE CONTROL THYRISTORS Hockey Puk Version
ST1900C..R SERIES
D-407
Bulletin I25197/A
Features
Double side cooling
High surge capability
High mean current
Fatigue free
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
I
T(AV)
1625 A
@ T
C
80 °C
I
T(AV)
1940 A
@ T
hs
55 °C
I
T(RMS)
3500 A
@ T
hs
25 °C
I
TSM
@ 50Hz 27500 A
@
60Hz 29000 A
I
2
t @ 50Hz 3780 KA2s
@
60Hz 3490 KA2s
V
DRM/VRRM
4500 to 5200 V
t
q
typical 500 µs
T
J
max. 125 °C
Parameters ST1900C..R Units
Major Ratings and Characteristics
(R-PUK)
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ST1900C..R Series
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12
D-408
Voltage V
DRM/VRRM
, max. repetitive V
RSM
, maximum non- I
DRM/IRRM
max.
Type number Code peak and off-state voltage repetitive peak voltage
@ TC = 125°C
V V mA
45 4500 4600
46 4600 4700
48 4800 4900
50 5000 5100
52 5200 5300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
ST1900C..R 250
I
T(AV)
Max. average on-state current 1625 (1030) A
@ Case temperature 80 °C
I
T(AV)
Max. average on-state current 1940 (800) A
@ Heatsink temperature 55 (85) °C
I
T(RMS)
Max. RMS on-state current 3500 A DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle No voltage
non-repetitive surge current reapplied
50% V
RRM
reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing No voltage Initial TC = 125°C
reapplied
50% V
RRM
reapplied
V
T(TO)
Max. value of threshold voltage 1.4 V TJ = TJ max.
r
t
Max. value of on-state slope
resistance
V
TM
Max. on-state voltage 2.1 V Ipk= 2900A, TC = 25°C
I
L
Typical latching current 300 mA TJ = 25°C, VD = 5V
Parameter ST1900C..R Units Conditions
On-state Conduction
A
KA2s
0.31 TJ = TJ max.
mΩ
180° conduction, half sine wave
double side (single side [anode side]) cooled
Parameter ST1900C..R Units Conditions
Switching
di/dt Max. repetitive 50Hz (no repetitive) From 67% V
DRM
to 1000A gate drive 20V, 10Ω, tr = 0.5µs
rate of rise of turned-on current to 1A, T
J
= TJ max.
Gate drive 30V, 15Ω,
Vd = 67% V
DRM, TJ
= 25°C
Rise time 0.5µs
I
T
= 1000A, tp = 1ms, TJ = TJ max, V
RM
= 50V,
dI
RR
/dt = 20A/µs, V
DR =
67% V
DRM, dVDR
/dt = 8V/µs linear
150 (300) A/µs
µs
t
q
Typical turn-off time 500
t
d
Maximum delay time 2.5
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
27500
29000
22000
23500
3780
3490
2420
2290
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ST1900C..R Series
D-411
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Voltage Drop Characteristics
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ST1900C..R Series
D-412
Fig. 7 - Stored Charged
Fig. 8 - Thermal Impedance Z
thJ-C
Characteristics
Fig. 9 - Gate Characteristics
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ST1900C..R Series
23
D-4093333
dv/dt Maximum linear rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
500 V/µs TJ = TJ max. to 67% rated V
DRM
Parameter ST1900C..R Units Conditions
250 mA TJ = 125°C rated V
DRM/VRRM
applied
Triggering
PGMMaximum peak gate power 150 tp = 100µs
P
G(AV)
Maximum average gate power 10
I
GM
Max. peak positive gate current 30 A Anode positive with respect to cathode
V
GM
Max. peak positive gate voltage 30 V Anode positive with respect to cathode
-V
GM
Max. peak negative gate voltage 0.25 V Anode negative with respect to cathode
I
GT
Maximum DC gate current
required to trigger
V
GT
Maximum gate voltage required
to trigger
Parameter ST1900C..R Units Conditions
W
400 mA TC = 25°C, V
DRM
= 5V
4 V T
C
= 25°C, V
DRM
= 5V
VGDDC gate voltage not to trigger 0.25 V TC = 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
180° 0.0010 0.0010 T
J
= TJ max.
120° 0.0017 0.0017 K/W
60° 0.0044 0.0044
∆R
thJ-C
Conduction
(The following table shows the increment of thermal resistence R
thJ-C
when devices operate at different conduction angles than DC)
Conduction angle Single side Double side Units Conditions
TJ max. Max. operating temperature 125 On-state (conducting)
T
stg
Max. storage temperature range -55 to 125
R
thJ-C
Thermal resistance, junction 0.019 DC operation single side cooled
to case 0.0095 DC operation double side cooled
R
th(C-h)
Thermal resistance, case 0.004 Single side cooled
to heatsink 0.002 Double side cooled
F Mounting force ± 10%
wt Approximate weight 1600 g
Case style (R-PUK) See Outline Table
Parameter ST1900C..R Units Conditions
Thermal and Mechanical Specification
°C
Clamping force 43KN with
mounting compound
43000
(4400)
N
(Kg)
K/W
K/W
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ST1900C..R Series
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D-410
Ordering Information Table
Device Code
51
2 3
4
ST 190 0 C 52 R 1
768
1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6 - R = Puk Case
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8 - Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)
Outline Table
(R-PUK)
All dimensions in millimeters (inches)
112.5 (4.4) DIA. MAX.
73.2 (2.9) DIA. MAX.
TWO PLACES
GATE
1.5 (0.06) DIA.
37.7 (1.5) M A X.
ANODE
3.7 (0.15) DIA. NOM. X
2.1 (0.1) DEEP MIN.
BOTH ENDS
CATHODE
HOLE 1.5 (0.06)
DIA. MAX.
4.76 (0.2)
20° ± 5°
6
.
3
(
0
.
2
4
)
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