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DESCRIPTION
ST13P10
P Channel Enhancement Mode MOSFET
-
13.0A
ST13P10 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. The ST13P10 has been
designed specially to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been optimized for low
gate charge, low R
DS(ON)
and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252 TO-251
PART MARKING
FEATURE
l -100V/-13.0A, R
@VGS = -10V
l Super high density cell design for
extremely low R
l Exceptional on-resistance and maximum
DC current capability
l TO-252,TO-251 package design
DS(ON)
DS(ON)
= 130mΩ
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST13P10 2009. V1
PDF created with pdfFactory Pro trial version www.pdffactory.com
Page 2
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Drain-Source Voltage VDSS -100 V
Gate-Source Voltage VGSS ±20 V
ST13P10
P Channel Enhancement Mode MOSFET
-
Parameter
Symbo
l
Typical Unit
13.0A
Continuous Drain Current
(TJ=150℃)
Pulsed Drain Current IDM -52 A
Continuous Source Current (Diode Conduction) IS -13 A
Power Dissipation
Operation Junction Temperature TJ 150
Storgae Temperature Range TSTG -55/150
Thermal Resistance-Junction to Ambient RθJA 110
TA=25℃
TA=100℃
TA=25℃
ID
PD 66 W
-13.0
-8.2
℃
℃
℃
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST13P10 2009. V1
A
/W
PDF created with pdfFactory Pro trial version www.pdffactory.com
Page 3
ST13P10
P Channel Enhancement Mode MOSFET
-
13.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter Symbol Condition Min Typ Max
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V
(BR)DSS
V
GS(th)
VGS=0V,ID=-250uA -100 V
VDS=VGS,ID=-250uA -2.0 -4.0 V
Uni
t
Gate Leakage Current I
Zero Gate Voltage
Drain Current
On-State Drain
Current
VDS=0V,VGS=±20V
GSS
VDS=-100V,VGS=0V -25
I
DSS
VDS=-80V,VGS=0V
TJ=150℃
I
D(on)
≧
V
-10V,VDS=-5V
DS
-250
-52 A
±100
nA
uA
Drain-source OnResistance
R
DS(on)
VGS=-10V,ID=-13A
115
130 mΩ
Forward
Transconductance
gfs VDS=-50V,ID=-7.8A 3.2 S
Diode Forward Voltage VSD IS=-7.8A,VGS=0V -1.6 V
Dynamic
Total Gate Charge Qg 58
Gate-Source Charge Qgs 8.3
Gate-Drain Charge Qgd
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
C
C
C
t
d(on)
tr
t
d(off)
tf
iss
oss
rss
VDS=-80V,VGS=-10V
ID=-8.4A
32
760
260
VDS =-25V,VGS=0V
F=1MHz
VGS=-10V,VDD=-50V
RD=6.2Ω,RG=9.1Ω
170
15
58
45
46
nC
pF
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
PDF created with pdfFactory Pro trial version www.pdffactory.com
Copyright © 2009, Stanson Corp.
ST13P10 2009. V1
Page 4
ST13P10
P Channel Enhancement Mode MOSFET
-
13.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
PDF created with pdfFactory Pro trial version www.pdffactory.com
Copyright © 2009, Stanson Corp.
ST13P10 2009. V1
Page 5
ST13P10
P Channel Enhancement Mode MOSFET
-
13.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST13P10 2009. V1
PDF created with pdfFactory Pro trial version www.pdffactory.com
Page 6
ST13P10
P Channel Enhancement Mode MOSFET
-
13.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST13P10 2009. V1
PDF created with pdfFactory Pro trial version www.pdffactory.com
Page 7
ST13P10
P Channel Enhancement Mode MOSFET
-
13.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
PDF created with pdfFactory Pro trial version www.pdffactory.com
Copyright © 2009, Stanson Corp.
ST13P10 2009. V1
Page 8
TO-252-2L PACKAGE OUTLINE SOP-8P
ST13P10
P Channel Enhancement Mode MOSFET
-
13.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
PDF created with pdfFactory Pro trial version www.pdffactory.com
Copyright © 2009, Stanson Corp.
ST13P10 2009. V1
Page 9
TO-251 PACKAGE OUTLINE SOP-8P
ST13P10
P Channel Enhancement Mode MOSFET
-
13.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
ST13P10 2009. V1
PDF created with pdfFactory Pro trial version www.pdffactory.com
Page 10
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