Page 1
HIGH VOLTAGE FAST-SWITCHING
■ HIGH VOLTAGECAPABILITY
■ NPNTRANSISTOR
■ LOW SPREAD OF DYNAMICPARAMETERS
■ MINIMUM LOT-TO-LOT SPREADFOR
RELIABLEOPERATION
■ VERYHIGH SWITCHINGSPEED
■ FULLYCHARACTERIZED AT 125
■ LARGERBSOA
APPLICATIONS
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
■ SWITCHMODE POWERSUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeeds and high voltagecapability.
They use a Cellular Emitter structure to enhance
switchingspeeds.
o
C
ST13007FP
NPN POWER TRANSISTOR
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
V
V
V
I
I
P
T
June 1998
Collector-Emitter Voltage (VBE= -1.5V) 700 V
CEV
Collector-Emitter Voltage (IB= 0) 400 V
CEO
Emitter-Base Voltage (IC=0) 9 V
EBO
Collect or Current 8 A
I
C
Collect or Peak C urr ent 16 A
CM
Base Current 4 A
I
B
Base P eak Current 8 A
BM
Tot al Dis sipation at Tc≤ 25oC36W
tot
Storage Tem perature -65 to 1 50
stg
Max. Operating J unc tion T emperature 150
T
j
o
C
o
C
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Page 2
ST13007FP
THERMAL DATA
R
thj-case
Ther mal Resistance Junct ion-cas e Max 3.47
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-of f
Current (V
= -1.5V)
BE
Emit ter Cut-off Current
=0)
(I
C
∗ Co llec tor-Emitt er
V
=ratedV
CE
VCE=ratedV
V
=9V 1 mA
EB
CEV
CEVTc
=100oC
1
5
mA
mA
IC= 10 m A 400 V
Sust aining Voltag e
V
∗ Collec tor-Emitt er
CE(sat)
Saturation Voltage
V
∗ Base-Emitt er
BE(sat )
Saturation Voltage
h
∗ DC Curr ent Gain IC=2A VCE=5V
FE
INDUCTIVE LO AD
t
s
t
f
St orage Time
Fall Time
INDUCTIVE LO AD
t
* Pulsed: Pulse duration = 300µs, dutycycle 2 %
Note : Productis pre-selected inDC current gain (GROUP A and GROUP B).STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
s
tf
St orage Time
Fall Time
IC=2A IB=0.4A
=5A IB=1A
I
C
=8A IB=2A
I
C
=5A IB=1A Tc=100oC
I
C
IC=2A IB=0.4A
=5A IB=1A
I
C
=5A IB=1A Tc=100oC
I
C
Gr oup A
Gr oup B
=5A VCE=5V
I
C
IC=5A VCL= 250 V
=1A IB2=-2A
I
B1
L = 200 µH
IC=5A VCL= 250 V
=1A IB2=-2A
I
B1
L = 200 µHT
= 125oC
c
15
26
5
1.6
60
2.3
110
1
2
3
3
1.2
1.6
1.5
28
40
30
2.5
110
V
V
V
V
V
V
V
ms
ns
µs
ns
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Page 3
ST13007FP
Safe OperatingAreas
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitter SaturationVoltage
BaseEmitter Saturation Voltage
3/6
Page 4
ST13007FP
InductiveFall Time InductiveStorage Time
ReverseBiased SOA
4/6
Page 5
TO-220FP MECHANICAL DATA
ST13007FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
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Page 6
ST13007FP
Information furnished is believed tobe accurate and reliable. However,STMicroelectronicsassumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication orotherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied.STMicroelectronics products
are not authorized for use as critical componentsin lifesupport devices or systems withoutexpress written approval of STMicroelectronics.
Australia - Brazil - Canada- China - France- Germany- Italy - Japan - Korea - Malaysia- Malta - Mexico- Morocco - The Netherlands -
Singapore- Spain- Sweden- Switzerland- Taiwan -Thailand - United Kingdom- U.S.A.
The ST logo isa trademarkof STMicroelectronics
1998STMicroelectronics– Printed in Italy – All Rights Reserved
STMicroelectronicsGROUP OF COMPANIES
.
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