Datasheet ST13007 Datasheet (SGS Thomson Microelectronics)



HIGH VOLTAGE FAST-SWITCHING

■ IMPROVEDSPECIFICATION:

- LOWERLEAKAGECURRENT

- TIGHTER GAIN RANGE

- DCCURRENT GAIN PRESELECTION

- TIGHTER STORAGETIME RANGE

■ HIGH VOLTAGECAPABILITY

■ NPNTRANSISTOR

■ LOW SPREADOF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREADFOR

RELIABLEOPERATION

■ VERYHIGH SWITCHING SPEED

■ FULLYCHARACTERIZED AT 125

■ LARGERBSOA

APPLICATIONS

■ ELECTRONICBALLASTSFOR

FLUORESCENT LIGHTING

■ SWITCHMODEPOWER SUPPLIES

DESCRIPTION

The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switchingspeedsandhigh voltagecapability.

They use a Cellular Emitter structure to enhance
switchingspeeds.

o

C

ST13007

NPN POWER TRANSISTOR

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

V
V
V

I

I
P

T

July 1998

Collector-Emitter Voltage (VBE= - 1 . 5V) 700 V

CEV

Collector-Emitter Voltage (IB= 0) 400 V

CEO

Emitter-Base Voltage (IC=0) 9 V

EBO

Collect or Current 8 A

I

C

Collect or Peak C urr ent 16 A

CM

Base Current 4 A

I

B

Base P eak Current 8 A

BM

tot Tot al Di ss ipa t ion at T

Storage Tem perature -65 to 150

stg

Max. Operat ing Junction Temperat u re 150

T

j

≤ 25oC

c

80 W

o

C

o

C

1/6

ST13007

THERMAL DATA

R

thj-case

Ther mal Resistance Junct ion-case Max 1.56

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

I

CEV

I

EBO

V

CEO(sus)

Collector C ut -off
Current (V

= -1.5V)

BE

Emit ter Cut - o f f Current

=0)

(I

C

∗ Collector-Em it t er

V

=ratedV

CE

VCE=ratedV
V

=9V 1 mA

EB

CEV
CEVTc

=100oC

10

0.5

µA

mA

IC= 10 mA 400 V

Sust aining V oltage

V

∗ Collec tor-Em itt er

CE(sat)

Saturation Volta ge

V

∗ Base-Emitt er

BE(sat)

Saturation Volta ge

h

∗ DC C urr ent Gain IC=2A VCE=5V

FE

RESI STIVE LOAD

t

s

t

f

St orage Time
Fall Time

INDUCTIV E LO A D

t

s

t

f

St orage Time
Fall Time

INDUCTIV E LO A D

t

* Pulsed: Pulseduration = 300 µs, dutycycle 2 %
Note : DCcurrent gain pre-selectedproduct (Group Aand Group B). STMicroelectronics reserves the right to shipeither groups according
to productionavailability. Please contact yournearest STMicroelectronics salesoffice for deliverydetails.

s

tf

St orage Time
Fall Time

IC=2A IB=0.4A

=5A IB=1A

I

C

=8A IB=2A

I

C

I

=5A IB=1A Tc=100oC

C

IC=2A IB=0.4A

=5A IB=1A

I

C

=5A IB=1A Tc=100oC

I

C

Gr oup A
Gr oup B

=5A VCE=5V

I

C

IC=2A VCC=300V

=0.4A IB2=-0.4A

I

B1

=30µs

t

p

IC=5A VCL= 250 V

=1A IB2=-2A

I

B1

L = 200 µH
IC=5A VCL= 250 V

=1A IB2=-2A

I

B1

L = 200 µHT

= 125oC

c

16
26

5

34.5

1.6
60

2.3

110

1
2
3
3

1.2

1.6

1.5

30
40
30

350

2.5

110

V
V
V
V

V
V
V

µs
ns

µs
ns

µs
ns

2/6

ST13007

Safe OperatingAreas

DCCurrent Gain

DeratingCurve

DC Current Gain

CollectorEmitter Saturation Voltage

BaseEmitter Saturation Voltage

3/6

ST13007

InductiveFall Time InductiveStorage Time

ReverseBiased SOA

4/6

TO-220 MECHANICAL DATA

ST13007

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

5/6

ST13007

Information furnished isbelieved to be accurate andreliable. However, STMicroelectronics assumes no responsibility for theconsequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication orotherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a trademark of STMicroelectronics

1998 STMicroelectronics – Printed inItaly – All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea -Malaysia - Malta - Mexico- Morocco - TheNetherlands -

6/6

Singapore -Spain - Sweden - Switzerland- Taiwan - Thailand - United Kingdom -U.S.A.

.