Datasheet SPW17N80C3 Datasheet (INFINEON)

SPW17N80C3

jmax

)

A

jmax

A

j

g

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Worldwide best R

DS(on)

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

Type Package Ordering Code

SPW17N80C3 P-TO247 Q67040-S4359

in TO 247

Marking

17N80C3

V

R

DS(on)

I

DS

D

800 V

0.29 Ω

17 A

P-TO247

Maximum Ratings

Parameter Symbol Value Unit

Continuous drain current

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current, tp limited by T

Avalanche energy, single pulse

I

= 3.4 A, VDD = 50 V

D

Avalanche energy, repetitive tAR limited by T

I

= 17 A, VDD = 50 V

D

Avalanche current, repetitive t

limited by T

R

jmax

I

I

E

1

E

I

Gate source voltage V

Gate source voltage AC (f >1Hz)

Power dissipation, T

= 25°C P

C

V

Operating and storage temperature T

D

D puls

AS

AR

R

GS

GS

tot

T

,

17

11

51

670 mJ

0.5

17 A

±20

±30

208 W

st

-55... +150

A

V

°C

Page 1

2004-03-03Rev. 2.1

Maximum Ratings

SPW17N80C3

Parameter

Drain Source voltage slope

VDS = 640 V, ID = 17 A, Tj = 125 °C

Symbol Value Unit

dv/dt 50 V/ns

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

Soldering temperature,

Symbol Values Unit

R

thJC

R

thJA

T

- - 260 °C

sold

1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Drain-source breakdown voltage

Drain-Source avalanche

Symbol Conditions Values Unit

V

(BR)DSS

V

(BR)DS

VGS=0V, ID=0.25mA 800 - - V

VGS=0V, ID=17A - 870 -

breakdown voltage

min. typ. max.

- - 0.6 K/W

- - 62

min. typ. max.

Gate threshold voltage V

Zero gate voltage drain current I

Gate-source leakage current I

Drain-source on-state resistance R

Gate input resistance

R

GS(th)

DSS

GSS

DS(on)

G

ID=1000µΑ, VGS=V

VDS=800V, VGS=0V,

T

=25°C,

j

=150°C

T

j

VGS=20V, VDS=0V - - 100 nA

VGS=10V, ID=11A,

T

=25°C

j

=150°C

T

j

f=1MHz, open Drain - 0.7 -

2.1 3 3.9

DS

-

0.5

-

-

-

0.25

0.78

µA

25

-

250

Ω

0.29

-

Page 2

2004-03-03Rev. 2.1

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

SPW17N80C3

Parameter

Symbol Conditions Values Unit

Transconductance g

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Effective output capacitance,

2)

C

energy related

Effective output capacitance,

3)

C

time related

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

fs

iss

oss

rss

o(er)

o(tr)

d(on)

r

d(off)

f

V

≥2*I

DS

D*RDS(on)max

I

=11A

D

VGS=0V, VDS=25V,

f=1MHz

VGS=0V,

V

=0V to 480V

DS

VDD=400V, VGS=0/10V,

I

=17A, RG=4.7Ω,

D

T

=125°C

j

,

min. typ. max.

- 15 - S

- 2320 - pF

- 1250 -

- 60 -

- 59 - pF

- 124 -

- 25 - ns

- 15 -

- 72 82

- 6 9

Gate Charge Characteristics

Gate to source charge

Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

1

Repetitve avalanche causes additional power losses that can be calculated as P

2

C

is a fixed capacitance that gives the same stored energy as C

o(er)

3

C

is a fixed capacitance that gives the same charging time as C

o(tr)

Q

gs

gd

g

(plateau)

VDD=640V, ID=17A - 12 - nC

VDD=640V, ID=17A,

V

=0 to 10V

GS

VDD=640V, ID=17A - 6 - V

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

- 46 -

- 91 177

=EAR*f.

AV

DSS

DSS

.

.

Page 3

2004-03-03Rev. 2.1

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

SPW17N80C3

Parameter

Inverse diode continuous

Symbol Conditions Values Unit

I

S

forward current

Inverse diode direct current,

I

SM

pulsed

Inverse diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

Peak reverse recovery current I

Peak rate of fall of reverse

SD

rr

rr

rrm

dirr/dt

recovery current

Typical Transient Thermal Characteristics

Symbol

Value Unit Symbol Value Unit

min. typ. max.

TC=25°C - - 17 A

- - 51

VGS=0V, IF=IS - 1 1.2 V

VR=400V, IF=IS ,

/dt=100A/µs

di

F

- 550 - ns

- 15 - µC

- 51 - A

- 1200 - A/µs

Thermal resistance

R

th1

R

th2

R

th3

R

th4

R

th5

R

th6

P

tot

typ. typ.

Thermal capacitance

0.00812 K/W

0.016

0.031

0.114

0.135

0.059

T

R

j T

th1

(t)

C

th1

C

th2

C

th1

C

th2

C

th3

C

th4

C

th5

C

th6

R

th,n

C

th,n

T

case

amb

External Heatsink

0.0003562

0.001337

0.001831

0.005033

0.012

0.092

Ws/K

Page 4

2004-03-03Rev. 2.1

SPW17N80C3

1 Power dissipation

P

= f (TC)

tot

SPW17N80C3

240

W

200

180

160

tot

P

140

120

100

80

60

40

20

0

0 20 40 60 80 100 120

°C

2 Safe operating area

ID = f ( VDS )

parameter : D = 0 ,

2

10

A

1

10

D

I

0

10

-1

10

-2

10

160

T

C

10

0

T

=25°C

C

tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC

1

10

10

2

V

V

DS

10

3

3 Transient thermal impedance

Z

= f (tp)

thJC

parameter: D = t

1

10

K/W

0

10

thJC

-1

Z

10

-2

10

-3

10

-4

10

-7

10

10

/T

p

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse

-6

10

-5

10

-4

10

-3

4 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: t

70

A

60

55

50

45

D

I

40

35

30

25

20

15

10

5

-1

10

s

t

p

0

0 5 10 15 20

= 10 µs, V

p

GS

8V

7V

6V

5V

20V
10V

V

DS

30

V

Page 5

2004-03-03Rev. 2.1

SPW17N80C3

5 Typ. output characteristic

ID = f (VDS); Tj=150°C

parameter: t

35

A

25

D

I

20

15

10

5

0

0 5 10 15 20

= 10 µs, V

p

GS

20V
10V
8V
7V

6.5V

6V

5.5V

5V

4.5V

4V

V

DS

V

30

6 Typ. drain-source on resistance

R

DS(on)

parameter:

=f(ID)

T

=150°C, V

j

1.5

Ω

1.3

1.2

DS(on)

R

1.1

1

0.9

0.8

0.7

0.6

0.5
0 5 10 15 20 25

4V

4.5V
5V

5.5V

GS

6V

6.5V

A

I

7V
8V
10V
20V

35

D

7 Drain-source on-state resistance

R

DS(on)

parameter : I

R

= f (Tj)

= 11 A, VGS = 10 V

D

SPW17N80C3

1.6

Ω

1.2

DS(on)

1

0.8

0.6

0.4

0.2

0

-60 -20 20 60 100

98%

typ

°C

8 Typ. transfer characteristics

= f ( VGS ); V

I

D

DS

≥ 2 x I

D

x R

DS(on)max

parameter: tp = 10 µs

65

A

55

50

45

D

40

I

35

30

25

20

15

10

5

180

T

j

0

0 2 4 6 8 10 12 14 16

25°C

150°C

V

V

20

GS

Page 6

2004-03-03Rev. 2.1

SPW17N80C3

j

9 Typ. gate charge

= f (Q

V

GS

parameter: I

SPW17N80C3

16

V

12

0.2 V

GS

0.8 V

10

V

8

6

4

2

0

0 20 40 60 80 100 120

)

Gate

= 17 A pulsed

D

DS max

DS max

nC

Q

160

Gate

10 Forward characteristics of body diode

IF = f (VSD)

parameter: T

2

10

A

1

10

F

I

0

10

-1

10

0 0.4 0.8 1.2 1.6 2 2.4

, tp = 10 µs

SPW17N80C3

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

3

V

V

SD

11 Avalanche SOA

IAR = f (tAR)

par.:

T

≤ 150 °C

j

18

A

14

12

AR

I

10

8

6

4

2

0

10

-3

10

T

-2

-1

10

(START)

=125°C

j

10 0 10 1 10

T

(START)

j

=25°C

2

µs

t

AR

10

12 Avalanche energy

EAS = f (Tj)

par.: I

4

= 3.4 A, VDD = 50 V

D

700

mJ

600

550

500

AS

450

E

400

350

300

250

200

150

100

50

0

25 50 75 100

°C

T

150

j

Page 7

2004-03-03Rev. 2.1

SPW17N80C3

13 Drain-source breakdown voltage

V

(BR)DSS

(BR)DSS

V

= f (Tj)

SPW17N80C3

980

V

940

920

900

880

860

840

820

800

780

760

740

720

-60 -20 20 60 100

°C

14 Avalanche power losses

PAR = f (f )

parameter:

500

W

400

350

AR

P

300

250

200

150

100

50

180

T

j

0

10

E

=0.5mJ

AR

4

10

5

Hz

10

6

f

15 Typ. capacitances

C = f (VDS)

parameter:

10

pF

10

10

C

10

10

10

V

=0V, f=1 MHz

GS

5

4

3

2

1

0

0 100 200 300 400 500 600

C

rss

16 Typ. C

E

=f(VDS)

oss

18

stored energy

oss

µJ

oss

14

12

C

iss

E

10

C

oss

800

V

V

DS

8

6

4

2

0

0 100 200 300 400 500 600

V

V

800

DS

Page 8

2004-03-03Rev. 2.1

Definition of diodes switching characteristics

SPW17N80C3

Page 9

2004-03-03Rev. 2.1

P-TO-247-3-1

15.9

6.35

ø3.61

SPW17N80C3

5.03

2.03

4.37

6.17

9.91

20.9

1.75

D

1.14

0.243

General tolerance unless otherwise specified: Leadframe parts: ±0.05

D 7

2.97 x 0.127

16

1.2

2

2.92

5.46

5.94

5˚

Package parts: ±0.12

20˚

41.22

0.762 MAX.

+0.05

2.4

Page 10

2004-03-03Rev. 2.1

SPW17N80C3

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Page 11

2004-03-03Rev. 2.1

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