Datasheet SPP08N50C3, SPI08N50C3, SPA08N50C3 Datasheet (INFINEON)

SPP08N50C3, SPI08N50C3

j

A

j

A

j

g

SPA08N50C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

VDS @ T

R

DS(on)

I

D

• Ultra low gate charge

• Periodic avalanche rated

PG-TO220FP PG-TO262 PG-TO220

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO220-3-31

3

2

1

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

Type Package Ordering Code

SPP08N50C3 PG-TO220 Q67040-S4567

SPI08N50C3 PG-TO262 Q67040-S4568

Marking

08N50C3

08N50C3

jmax

560 V

0.6 Ω

7.6 A

SPA08N50C3 PG-TO220FP SP000216306

Maximum Ratings

Parameter

Continuous drain current

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current, tp limited by T

max

Avalanche energy, single pulse

I

=5.5A, V

D

Avalanche energy, repetitive t

I

=7.6A, V

D

Avalanche current, repetitive t

DD

DD

=50V

=50V

limited by T

AR

limited by T

R

jmax

max

2)

Gate source voltage

Gate source voltage AC (f >1Hz)

Power dissipation, T

= 25°C P

C

08N50C3

Symbol Value Unit

I

D

I

Dpuls

E

AS

E

AR

I

R

V

GS

V

GS
tot

SPP_I

7.6

4.6

22.8 22.8 A

230 230 mJ

0.5 0.5

7.6 7.6 A

±20 ±20 V

±30 ±30

83 32 W

SPA

7.6

4.6

A

1)

1)

Operating and storage temperature T

Reverse diode dv/dt

Rev. 2.9 Page 1

6)

,

T

st

-55...+150 °C

dv/dt 15 V/ns

2007-08-30

Maximum Ratings

SPP08N50C3, SPI08N50C3

SPA08N50C3

Parameter

Drain Source voltage slope

V

= 400 V, I

DS

= 7.6 A, T

D

= 125 °C

j

Symbol Value Unit

dv/dt 50 V/ns

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - case, FullPAK R

Thermal resistance, junction - ambient, leaded

Thermal resistance, junction - ambient, FullPAK R

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s

3)

Symbol Values Unit

R

thJC

thJC_FP

R

thJA

thJA FP

T

sold

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions Values Unit

min. typ. max.

- - 1.5 K/W

- - 3.9

- - 62

- - 80

- - 260 °C

min. typ. max.

Drain-source breakdown voltage

Drain-Source avalanche

V

V

breakdown voltage

Gate threshold voltage V

Zero gate voltage drain current I

Gate-source leakage current I

Drain-source on-state resistance R

Gate input resistance

R

(BR)DSS

(BR)DS

GS(th)

DSS

GSS

DS(on)

G

V

=0V, ID=0.25mA 500 - - V

GS

V

=0V, ID=7.6A - 600 -

GS

ID=350µA, VGS=V

VDS=500V, V

=25°C

T

j

=150°C

T

j

VGS=20V, V
V

=10V, ID=4.6A

GS

T

=25°C

j

=150°C

T

j

f=1MHz, open drain - 1.2 -

=0V,

GS

=0V - - 100 nA

DS

2.1 3 3.9

DS

-

-

-

-

0.5

-

0.5

1.5

100

0.6

µA

1

Ω

-

Rev. 2.9 Page 2

2007-08-30

Electrical Characteristics

SPP08N50C3, SPI08N50C3

SPA08N50C3

Parameter

Symbol Conditions Values Unit

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C

Effective output capacitance,

4)

C

energy related

Effective output capacitance,

5)

C

time related

Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

fs

iss
oss
rss

o(er)

o(tr)

d(on)
r
d(off)
f

V

≥2*ID*R

DS

I

=4.6A

D

VGS=0V, V
f=1MHz

VGS=0V, V

VDD=380V, V

I

=7.6A,

D

R

=12Ω

G

DS

DS

min. typ. max.

DS(on)max

=25V,

,

- 6 - S

- 750 - pF

- 350 -

- 12 -

=400 - 56 -

- 30 -

GS

=0/10V,

- 6 - ns

- 5 -

- 60 -

- 7 -

Gate Charge Characteristics

Gate to source charge
Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

1

Limited only by maximum temperature

2

Repetitve avalanche causes additional power losses that can be calculated as P

3

Soldering temperature for TO-263: 220°C, reflow

4

is a fixed capacitance that gives the same stored energy as C

C

o(er)

5

is a fixed capacitance that gives the same charging time as C

C

o(tr)

6

ISD<=I

Identical low-side and high-side switch.

, di/dt<=400A/us, V

D

DClink

Q

gs
gd

g

(plateau)

=400V, V

peak<VBR, DSS

V

=400V, ID=7.6A - 3 - nC

DD

V

=400V, ID=7.6A,

DD

V

=0 to 10V

GS

V

=400V, ID=7.6A - 5 - V

DD

while V

oss

while V

oss

, Tj<T

j,max

.

- 17 -

- 32 -

=EAR*f.

AV

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

DSS

DSS

.

.

Rev. 2.9 Page 3

2007-08-30

Electrical Characteristics

SPP08N50C3, SPI08N50C3

SPA08N50C3

Parameter

Inverse diode continuous

Symbol Conditions Values Unit

I

S

forward current

Inverse diode direct current,

I

SM

pulsed

Inverse diode forward voltage V

Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I

Peak rate of fall of reverse

SD

rr

rr

rrm

dirr/dt

recovery current

Typical Transient Thermal Characteristics

Symbol

SPP_I SPP_I

Value Unit Symbol Value Unit

SPA SPA

min. typ. max.

T

=25°C - - 7.6 A

C

- - 22.8

V

=0V, IF=I

GS

V

=400V, IF=IS ,

R

/dt=100A/µs

di

F

S

- 1 1.2 V

- 370 - ns

- 3.6 - µC

- 25 - A

T

=25°C - 700 - A/µs

j

R

R

R

R

R

R

th1

th2

th3

th4

th5

th6

0.024 0.024 K/W C

0.046 0.046 C

0.085 0.085 C

0.308 0.195 C

0.317 0.45 C

0.112 2.511 C

T

R

j T

th1

P

(t)

tot

C

th1

C

th2

R

C

th,n

th,n

th1

th2

th3

th4

th5

th6

0.00012 0.00012 Ws/K

0.0004578 0.0004578

0.000645 0.000645

0.001867 0.001867

0.004795 0.007558

0.045 0.412

External Heatsink

T

case

amb

Rev. 2.9 Page 4

2007-08-30

SPP08N50C3, SPI08N50C3

SPA08N50C3

1 Power dissipation

P

= f (T

tot

tot

P

100

W

80

70

60

50

40

30

20

10

)

C

SPP08N50C3

0

0 20 40 60 80 100 120

°C

2 Power dissipation FullPAK

P

= f (T

tot

35

W

25

tot

P

20

15

10

160

T

C

)

C

5

0

0 20 40 60 80 100 120

°C

T

150

C

3 Safe operating area

I

= f ( VDS )

D

parameter : D = 0 ,

2

10

A

1

10

D

I

0

10

-1

10

-2

10

0

10

T

C

tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC

1

10

=25°C

10

4 Safe operating area FullPAK

I

= f (V

D

parameter: D = 0,

10

A

10

D

I

10

10

2

V

3

10

V

DS

10

)

DS

T

= 25°C

C

2

1

0

tp = 0.001 ms

0

tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC

1

10

10

2

V

3

10

V

DS

-1

-2

10

Rev. 2.9 Page 5

2007-08-30

SPP08N50C3, SPI08N50C3

SPA08N50C3

5 Transient thermal impedance

Z

= f (tp)

thJC

parameter: D = t

1

10

K/W

0

10

thJC

Z

-1

10

-2

10

-3

10

-7

10

10

/T

p

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse

-6

10

-5

10

-4

10

-3

6 Transient thermal impedance FullPAK

Z

= f (t

thJC

parameter: D =

10

K/W

10

thJC

Z

10

10

-1

10

s

t

p

10

)

p

t

/t

p

1

0

-1

D = 0.5
D = 0.2
D = 0.1

-2

-3

10-710-610-510-410-310-210

D = 0.05
D = 0.02
D = 0.01
single pulse

-1

1

10

s

t

p

7 Typ. output characteristic

I

= f (VDS); T

D

parameter: t

24

A

16

D

I

12

8

4

0

0 5 10 15

=25°C

j

= 10 µs, V

p

20V
10V
8V

GS

8 Typ. output characteristic

I

= f (VDS); T

D

parameter: t

13

A

7V

6,5V

6V

5,5V

5V

4,5V

V

DS

25

V

11

10

9

D

I

8

7

6

5

4

3

2

1

0

0 2 4 6 8 10 12 14 16 18 20 22 V25

=150°C

j

= 10 µs, V

p

20V
8V

6.5V

GS

5.5V

5V

4.5V

4V

V

6V

DS

Rev. 2.9 Page 6

2007-08-30

SPP08N50C3, SPI08N50C3

SPA08N50C3

9 Typ. drain-source on resistance

R

DS(on)

parameter:

R

=f(I

)

D

T

=150°C, V

j

10

4V

Ω

8

7

DS(on)

6

5

4

3

2

1

0

0 2 4 6 8 10 12

4.5V

5V

GS

5.5V

6V

6.5V
8V
20V

A

I

D

15

10 Drain-source on-state resistance

R

DS(on)

parameter : I

R

= f (Tj)

= 4.6 A, V

D

SPP08N50C3

3.4

Ω

2.8

2.4

DS(on)

2

1.6

1.2

0.8

0.4

0

-60 -20 20 60 100

98%

typ

= 10 V

GS

°C

180

T

j

11 Typ. transfer characteristics

I

= f ( VGS ); V

D

DS

≥ 2 x I

D

x R

DS(on)max

parameter: tp = 10 µs

24

A

25°C

20

18

16

D

I

14

12

10

8

6

4

2

0

0 2 4 6

150°C

V

12 Typ. gate charge

= f (Q

V

GS

parameter: I

SPP08N50C3

16

V

12

GS

10

V

8

6

4

2

10

V

GS

0

0 5 10 15 20 25 30 35 40

)

Gate

= 7.6 A pulsed

D

0,2

V

DS max

0,8 V

DS max

nC

Q

50

Gate

Rev. 2.9 Page 7

2007-08-30

SPP08N50C3, SPI08N50C3

j

SPA08N50C3

13 Forward characteristics of body diode

I

= f (VSD)

F

parameter: T

2

SPP08N50C3

10

A

1

10

F

I

0

10

-1

10

0 0.4 0.8 1.2 1.6 2 2.4

, tp = 10 µs

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

3

V

V

SD

14 Avalanche SOA

I

= f (tAR)

AR

par.:

T

≤ 150 °C

j

8

A

6

5

AR

I

4

3

2

1

0

10-310-210-110010110

T

(START)

j

=125°C

(START)=25°C

T

j

2

µs

t

AR

10

4

15 Avalanche energy

E

= f (T

AS

par.: I

mJ

AS

E

260

220

200

180

160

140

120

100

)

j

= 5.5 A, V

D

80

60

40

20

0

20 40 60 80 100 120

DD

= 50 V

°C

16 Drain-source breakdown voltage

V

(BR)DSS

(BR)DSS

V

160

T

j

= f (T

SPP08N50C3

600

V

570

560

550

540

530

520

510

500

490

480

470

460

450

-60 -20 20 60 100

)

j

°C

180

T

j

Rev. 2.9 Page 8

2007-08-30

SPP08N50C3, SPI08N50C3

SPA08N50C3

17 Avalanche power losses

P

= f (f )

AR

parameter:

500

W

AR

P

300

200

100

E

=0.5mJ

AR

0

10

4

10

5

MHz

18 Typ. capacitances

C = f (

parameter:

6

10

f

V

)

DS

V

=0V, f=1 MHz

GS

4

10

pF

3

10

C

2

10

1

10

Crss

0

10

0 100 200 300

Ciss

Coss

V

500

V

DS

19 Typ. C

E

=f(V

oss

4

µJ

3

oss

2.5

E

2

1.5

1

0.5

0

0 100 200 300

stored energy

oss

)

DS

V

500

V

DS

Rev. 2.9 Page 9

2007-08-30

Definition of diodes switching characteristics

SPP08N50C3, SPI08N50C3

SPA08N50C3

Rev. 2.9 Page 10

2007-08-30

PG-TO220-3-1, PG-TO220-3-21

SPP08N50C3, SPI08N50C3

SPA08N50C3

Rev. 2.9 Page 11

2007-08-30

SPP08N50C3, SPI08N50C3

PG-TO-220-3-31/3-111 Fully isolated package (2500VAC; 1 minute)

SPA08N50C3

Rev. 2.9 Page 12

2007-08-30

PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)

SPP08N50C3, SPI08N50C3

SPA08N5

0C3

Rev. 2.9 Page 13

2007-08-30

SPP08N50C3, SPI08N50C3

SPA08N50C3

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© Infineon Technologies AG 1999
All Rights Reserved.

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characteristics.

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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
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cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
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Rev. 2.9 Page 14

2007-08-30