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J212
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ212
At 25°C free air temperature: J212 Process NJ26L
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 25 V IG= – 1 µA, VDS= ØV
Gate Reverse Current I
GSS
– 100 pA VGS= – 15V, VDS= ØV
Gate Operating Current I
G
– 10 pA VDS= 20V, ID= 1 mA
Gate Source Cutoff Voltage V
GS(OFF)
– 4 – 6 V VDS= 15V, ID= 1 nA
Drain Saturation Current (Pulsed) I
DSS
15 40 mA VDS= 15V, VGS= ØV
Dynamic Electrical Characteristics
Common Source Forward Transconductance g
fs
7000 12000 µS VDS= 15V, VGS= ØV f = 1 kHz
Common Source Output Conductance g
os
200 µS VDS= 15V, VGS= ØV f = 1 kHz
Common Source Input Capacitance C
iss
4pFV
DS
= 15V, VGS= ØV f = 1 MHz
Common Source Reverse Transfer
C
rss
1pFV
DS
= 15V, VGS= ØV f = 1 MHz
Capacitance
Equivalent Short Circuit
¯e
N
10 nV/√Hz VDS= 15V, VGS= ØV f = 1 kHz
Input Noise Voltage
¥ Audio Amplifier
¥ General Purpose Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-57
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