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B-56 01/99
J210, J211
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
¥ General Purpose Amplifiers
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ210, SMPJ211
At 25°C free air temperature:
J210 J211 Process NJ26L
Static Electrical Characteristics
Min Typ Max Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 25 – 25 V IG= – 1µA, VDS= ØV
Gate Reverse Current I
GSS
– 100 – 100 pA VGS= – 15V, VDS= ØV
Gate Operating Current I
G
– 10 – 10 pA VDS= 20V, ID= 1 mA
Gate Source Cutoff Voltage V
GS(OFF)
– 1 – 3 – 2.5 – 4.5 V VDS= 15V, ID= 1 nA
Drain Saturation Current (Pulsed) I
DSS
215720mAV
DS
= 15V, VGS= ØV
Dynamic Electrical Characteristics
Common Source Forward
g
fs
4000 12000 6000 12000 µS VDS= 15V, VGS= ØV f = 1 kHz
Transconductance
Common Source Output Conductance g
os
150 200 µS VDS= 15V, VGS= ØV f = 1 kHz
Common Source Input Capacitance C
iss
44pFV
DS
= 15V, VGS= ØV f = 1 MHz
Common Source Reverse
C
rss
11pFV
DS
= 15V, VGS= ØV f = 1 MHz
Transfer Capacitance
Equivalent Short Circuit Input
¯e
N
10 10
nV/√Hz
VDS= 15V, VGS= ØV f = 1 kHz
Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-56
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