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01/99 B-53
J176, J177
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 30 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Gate, 3 Source
Surface Mount
SMPJ176, SMPJ177
At 25°C free air temperature: J176 J177 Process PJ99
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
30 30 V IG= 1 µA, VDS= ØV
Gate Reverse Current I
GSS
11nAV
GS
= 20V, VDS= ØV
Gate Source Cutoff Voltage V
GS(OFF)
1 4 0.8 2.25 V VDS= – 15V, ID= – 10 nA
Drain Saturation Current (Pulsed) I
DSS
– 2 – 35 – 1.5 – 20 mA VDS= – 15V, VGS= ØV
Drain Cutoff Current I
D(OFF)
– 1 – 1 nA VDS= – 15V, VGS= 10V
Dynamic Electrical Characteristics Max Max
Drain Source ON Resistance r
ds(on)
250 300 Ω VGS= Ø, VDS< = 0.1V f = 1 kHz
Dynamic Electrical Characteristics Typ Typ
Drain Gate Capacitance C
gd
5.5 5.5 pF VDS= ØV, VGS= 10V f = 1 MHz
Source Gate Capacitance C
gs
5.5 5.5 pF VDS= ØV, VGS= 10V f = 1 MHz
Drain Gate + Source Gate Capacitance Cgd+ C
gs
32 32 pF VDS= VGS= ØV f = 1 MHz
Switching Characteristics
J176 J177
Turn ON Delay Time td
(on)
15 20 ns
V
DD
– 6 – 6 V
Rise Time t
r
20 25 ns
V
GS(OFF)
63V
Turn OFF Delay Time td
(off)
15 20 ns
R
L
5.6k 10k Ω
Fall Time t
f
20 25 ns V
GS(ON)
ØØV
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Databook.fxp 1/13/99 2:09 PM Page B-53
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