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01/99 B-49
J108, J109
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ108, SMPJ109
At 25°C free air temperature: J108 J109 Process NJ450
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 25 – 25 V IG= – 1 µA, VDS= ØV
Gate Reverse Current I
GSS
– 3 – 3 nA VGS= – 15V, VDS= ØV
Gate Source Cutoff Voltage V
GS(OFF)
– 3 – 10 – 2 – 6 V VDS= 5V, ID= 1 µA
Drain Saturation Current (Pulsed) I
DSS
80 40 mA VDS= 15V, VGS= ØV
Drain Cutoff Current I
D(OFF)
33nAV
DS
= 5V, VGS= – 10V
Dynamic Electrical Characteristics
Drain Source ON Resistance r
ds(on)
812Ω VGS= Ø, VDS< = 0.1V f = 1 kHz
Drain Gate Capacitance C
gd
15 15 pF VDS= ØV, VGS= – 10V f = 1 MHz
Source Gate Capacitance C
gs
15 15 pF VDS= ØV, VGS= – 10V f = 1 MHz
Drain Gate + Source Gate Capacitance Cgd+ C
gs
85 85 pF VDS= VGS= ØV f = 1 MHz
Switching Characteristics Typ Typ
Turn ON Delay Time td
(on)
33ns J108 J109
Rise Time t
r
11nsVDD1.5 1.5 V
Turn OFF Delay Time td
(off)
44ns
V
GS(OFF)
– 12 – 7 V
Fall Time t
f
18 18 ns
R
L
150 150 Ω
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Databook.fxp 1/14/99 1:02 PM Page B-49
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