Datasheet SMP30-120, SMP30-130, SMP30-180, SMP30-200, SMP30-220 Datasheet (SGS Thomson Microelectronics)

SMP30-xxx Series

FEATURES

n BIDIRECTIONAL CROWBAR PROTECTION.
n VOLTAGE RANGE: FROM 62 V TO 270 V.
n HOLDING CURRENT :

IH= 150 mA min.

n REPETITIVE PEAK PULSE CURRENT :

IPP= 30 A, 10/1000 µs.

n JEDEC REGISTERED PACKAGE OUTLINE

DESCRIPTION

The SMP30-xxx series has been designed to
protect telecommunication equipments against
lightning surges and overvoltages induced by AC
power lines.

SMA

(JEDEC DO-214AA)

SCHEMATIC DIAGRAM

TRISIL

TM

COMPLIES WITH THE

FOLLOWING STANDARDS:

(CCITT) ITU-K20

Peak Surge

Voltage

(V)

1000 10/700 5/310 25 -

Voltage

Waveform

(µs)

Current

Waveform

(µs)

Admissible

Ipp

(A)

Necessary

(CCITT) ITU-K17 1500 10/700 5/310 38 ­VDE0433

2000 10/700 5/310 40 10
VDE0878 2000 1.2/50 1/20 50 ­IEC-1000-4-5

FCC Part 68, lightning surge
type A

FCC Part 68, lightning surge

level 2
level 3

1500

800

10/700

1.2/50

10/160
10/560

5/310

8/20

10/160
10/560

25
50

65
50

1000 9/720 5/320 25 ­type B

BELLCORE TR-NWT-001089
First level

BELLCORE TR-NWT-001089

2500

1000

2/10

10/1000

2/10

10/1000

125

30

5000 2/10 2/10 125 15.0
Second level

BELLCORE TR-NWT-001089

1500 2/10 2/10 100 ­Intra building lightning

CNET l31-24 1000 0.5/700 0.8/310 25 -

January 2000 - Ed: 5B

Resistor

(Ω)

-

-

15.5

8.0

15.0

23.3

1/6

SMP30-xxx Series

ABSOLUTE MAXIMUM RATINGS (T

amb

=25°C)

Symbol Parameter Value Unit

P Power dissipation on infinite heatsink T

IPPPeak pulse current 10/1000 µs

I

TSM

I2t

Non repetitive surge peak on-state current tp = 20 ms 15 A
I2t value for fusing

dV/dt Critical rate of rise of off-state voltage V

T

stg

T

j

T

L

Storage temperature range
Maximum junction temperature

Maximumleadtemperatureforsolderingduring10sat5mmforcase

=50°C3 W

amb

30

8/20 µs

60

tp = 20 ms 1 A2s

RM

5 kV/µs

- 55 to + 150
150

260 °C

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-l) Junction to leads 30 °C/W

Rth(j-a)

Junction to ambient on printed circuit

120 °C/W

with standard footprint dimension

A

°C
°C

ELECTRICAL CHARACTERISTICS

(T

=25°C)

amb

Symbol Parameter

V

RM

I

RM

V

V

BR

V

BO

I

H

I

BO

I

PP

Stand-off voltage
Leakage current at stand-off voltage
Continuous Reverse voltage

R

Breakdown voltage

Breakover voltage

Holding current
Breakover current
Peak pulse current

C Capacitance

2/6

SMP30-xxx Series

Type

Marking IRM@V

RM

max max

note 1

µAVµAV VmAmA pF

SMP30-62
SMP30-68
SMP30-100
SMP30-120
SMP30-130
SMP30-180
SMP30-200
SMP30-220
SMP30-240
SMP30-270

Note 1: IRmeasured at VRguarantee V
Note 2: Measured at 50 Hz(1cycle) - See test circuit1.
Note 3: See test circuit 2.
Note 4: VR= 1V, F =1MHz.
Note 5: VR= 50V,F = 1MHz

QAA
QAB
QAC
QAD
QAE
QAF
QAG
QAH

QAI

QAJ

2
2
2
2
2
2
2
2
2
2

BRmin

108
117
162
180
198
216
243

 V

56
61
90

50
50
50
50
50
50
50
50
50
50

R

TEST CIRCUIT 1 FORIBOand VBOparameters :

tp

Auto

Transfo r m er

220V/2A

static
relay.

IR@V

100
120
130
180
200
220
240
270

=20ms

R

62
68

note 2

R1

140

R2

240

VBO@I

max

82

90
133
160
173
240
267
293
320
360

BO

800
800
800
800
800
800
800
800
800
800

I

H

min

note 3

150
150
150
150
150
150
150
150
150
150

typ

note 4

50
50
40
40
35
35
30
30
30
30

C

typ

note 5

20
20
16
16
14
14
12
12
12
12

V

out

I

220V

Transformer

220V/800V

5A

BO

measure

TEST PROCEDURE :

n Pulse Test duration (tp = 20ms):

- For Bidirectional devices = Switch K is closed

- For Unidirectional devices = Switch K is open.

n V

OUT

Selection

- Device with VBO< 250 Volt

-V

OUT

= 250 V

RMS,R1

= 140 Ω.

- Device with VBO 250 Volt

-V

OUT

= 480 V

RMS,R2

= 240 Ω.

K

D.U.T

V

BO

measure

3/6

SMP30-xxx Series

TEST CIRCUIT 2 for IHparameter.

R

-V

P

V

BAT

D.U.T .

= - 48 V

Surge generator

This is a GO-NOGO Test which allows to confirm the holding current (IH) level in afunctional test circuit.

TEST PROCEDURE :

n 1) Adjust the current level at the I

value by short circuiting the AK of the D.U.T.

H

2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.

3) The D.U.T will come back off-state within 50 ms max.

4/6

SMP30-xxx Series

Fig. 1: Non repetitive surge peak on-sate current

versus overload duration (Tj initial=25°C).

ITSM(A)

20

F = 50Hz

15

10

5

0

1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

t(s)

Fig. 3: Relative variation of junction capacitance

versus reverse applied voltage (typical values)

C[VR]/C[VR=1V]

1.0

F = 1MHz

0.5

Fig. 2: Relative variation of holding currentversus
junction temperature.

IH[Tj] / IH[Tj=25°C]

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20 0 20 40 60 80 100 120

Tj(°C)

Fig. 4: On-state voltage versus on-state current

(typical values).

IT(A)

50

Tj = 25°C

20
10

0.2

0.1
1 10 100 300

VR(V)

Fig. 5: Variation of thermal impedance junction to

ambient versus pulse duration.

Zth(j-a)(°CW)

1E+2

1E+1

1E+0

1E-1

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

tp(s)

5

2
1

012345678910

VT(V)

Fig. 6: Relative variation of VBOvoltage versus

junction temperature.

Vbo[Tj]/Vbo[Tj=25°C]

1.10

1.05

1.00

270 V

0.95

62V

0.90

-40 -20 0 20 40 60 80 100

Tj(°C)

5/6

SMP30-xxx Series

ORDER CODE

SMP 30 - 62

SURFACE MOUNT PROTECTION

MARKING : Logo, Date Code, Part Number.

PACKAGE MECHANICAL DATA

SMA (JEDEC DO-214AA)

E1

D

E

A1

C

L

A2

IPP=30A

b

VOLTAGE

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.70 0.075 0.106
A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016

E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

D 2.25 2.95 0.089 0.116

L 0.75 1.60 0.030 0.063

FOOT PRINT (in millimeters)

Weight: 0.06 g
Packaging : Tape and reel.

1.65

2.40

1.45 1.45

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