Datasheet SI3445DV Datasheet (Fairchild Semiconductor)

Si3445DV

P-Channel 1.8V Specified PowerTrench



MOSFET

Si3445DV

April 2001

General Description

This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.

Applications

• Battery management

• Load switch

• Battery protection

Features

• –5.5 A, –20 V. R
R
R

• Fast switching speed.

• High performance trench te chnology for extremely

low R

DS(ON)

= 33 mΩ @ VGS = –4.5 V

DS(ON)

= 43 mΩ @ VGS = –2.5 V

DS(ON)

= 60 mΩ @ VGS = –1.8 V

DS(ON)

S

D

D

1
2

6
5

G

SuperSOT -6

TM

D

D

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

3

4

Symbol Parameter Ratings Units

V

Drain-Source Voltage –20 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) –5.5 A
– Pulsed –20

Maximum Power Dissipation (Note 1a) 1.6 W PD

TJ, T

Operating and Storage Junction Temperature Range –55 to +150

STG

(Note 1b)

±8

0.8

V

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a) 78

(Note 1) 30

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.445 Si3445DV 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation

°C/W
°C/W

Si3445DV Rev A (W)

Si3445DV

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA

V

= 0 V, ID = –250 µA

GS

= –250 µA,Referenced to 25°C

I

D

–20 V

–12

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A

D(on)

V

= VGS, ID = –250 µA

DS

= –250 µA,Referenced to 25°C

I

D

VGS = –4.5 V, ID = –5.5 A
V

= –2.5 V, ID = –4.8 A

GS

= –1.8 V, ID = –4.0 A

V

GS

–0.4 –0.7 –1.5 V

3

24

30
42

33
43
60

mV/°C

mΩ

gFS Forward Transconductance VDS = –5 V, ID = –3.5 A 23 S

Dynamic Characteristics

C

Input Capacitance 1926 pF

iss

C

Output Capacitance 530 pF

oss

C

Reverse Transfer Capacitance

rss

= –10 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

185 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 13 23 ns

d(on)

tr Turn–On Rise Time 11 20 ns
t

Turn–Off Delay Time 90 144 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 19 30 nC
Qgs Gate–Source Charge 4 nC
Qgd Gate–Drain Charge

= –10 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

= –10 V, ID = –3.5 A,

V

DS

V

= –4.5 V

GS

GEN

= 6 Ω

45 72 ns

7.5 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A
VSD Drain–Source Diode Forward

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain

θJA

pins. R

a. 78°C/W when mounted on a 1in
b. 156°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

is guaranteed by design while R

θJC

2

pad of 2oz copper on FR-4 board.

is determined by the user's board design.

θCA

VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.2 V

Si3445DV Rev A(W)

)

Typical Characteristics

Si3445DV

20

VGS = -4.5V

-2.5V

15

10

5

0

0123

-2.0V

-1.8V

, DRAIN-SOURCE VOLTAGE (V)

-V

DS

-1.5V

3

VGS = -1.5V

2.5

2

1.5

1

0.5

0 5 10 15 20

-1.8V

-2.0V

-I

, DRAIN CURRENT (A)

D

-2.5V

-4.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.5
ID = -5.5A

1.4

V

= -4.5V

GS

1.3

1.2

1.1

1

0.9

0.8

0.7

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.12

0.09

0.06

0.03
TA = 25oC

0

12345

TA = 125oC

-V

, GATE TO SOURCE V O LTAGE (V)

GS

ID = -2.8 A

Figure 3. On-Resistance Variation

withTemperature.

20

VDS = -5V

15

10

5

0

00.511.522.5

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

o

o

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

-V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

Si3445DV Rev A(W)

Typical Characteristics

Si3445DV

5

ID = -5.5A

4

VDS = -5V

-10V

-15V

3

2

1

0

0 5 10 15 20 25

Q

, GATE CHARGE (nC)

g

3500

3000

2500

2000

C

ISS

1500

1000

500

0

C

OSS

C

RSS

0 5 10 15 20

, DRAIN TO SO URCE VOLTAGE (V)

-V

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

10

0.1

0.01

1

DS(ON)

VGS = -4.5V

SINGLE PULSE

= 156oC/W

R

θ

JA

= 25oC

T

A

1s

DC

10ms

100ms

100µs

1ms

0.1 1 10 100

-V

, DRAIN-SOURCE VOL TAG E (V)

DS

5

SINGLE PULSE

R

= 156oC/W

θ

4

JA

T

A

= 25oC

3

2

POWER (W)

1

0

0.1 1 10 100

SINGLE PULSE TIME (SEC)

f = 1MHz
V

= 0 V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.1

0.01

THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000

0.2

0.1

0.05

0.02

0.01
SING LE PU LSE

t

, TIM E (s e c )

1

P(pk)

T

Du ty C y c le, D = t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

R

(t) = r(t) + R

θ

JA

R

= 156 °C/W

θ

JA

t

1

- TA = P * R

J

t

2

θ

JA

(t)

θ

JA

/ t

1

2

Si3445DV Rev A(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOL T™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™



FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™

PACMAN™
POP™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
St ar* Power™
Stealth™



SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET



VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H1