Datasheet Si1563DH Datasheet (Vishay) [ru]

Si1563DH

C/W

New Product

Complementary 20-V (D-S) Low-Threshold MOSFET

PRODUCT SUMMARY

V

(V) r

DS

0.280 @ VGS = 4.5 V 1.28

N-Channel 20 0.360 @ VGS = 2.5 V 1.13

0.450 @ VGS = 1.8 V 1.00

0.490 @ VGS = -4.5 V -1.00

P-Channel -20

0.750 @ VGS = -2.5 V -0.81

1.10 @ VGS = -1.8 V -0.67

SOT-363

SC-70 (6-LEADS)

1

S

1

2

G

1

3

D

2

Top View

6

D

1

5

G

2

S

4

2

(W) I

DS(on)

Marking Code

EB XX

Part # Code

YY

Lot Traceability
and Date Code

Vishay Siliconix

FEATURES

(A)

D

D TrenchFETr Power MOSFETS: 1.8-V Rated
D Thermally Enhanced SC-70 Package
D Fast Switching

APPLICATIONS

D Load Switch for Portable Devices

D

1

G

2

G

1

S

1

N-Channel

S

D

P-Channel

2

2

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

N-Channel P-Channel

Parameter Symbol

Drain-Source Voltage V
Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I
Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

TA = 25_C 1.28 1.13 - 1.00 -0.88
TA = 85_C

a

TA = 25_C 0.74 0.57 0.30 0.57
TA = 85_C

P

I

DM

I

DS
GS

D

S

D

stg

5 secs Steady State 5 secs Steady State

20 -20

"8 "8

0.92 0.81 -0.72 -0.63

4.0 -3.0

0.61 0.48 -0.61 -0.48

0.38 0.30 0.16 0.3

-55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 5 sec 130 170

Steady State

R

thJA

thJF

170 220

80 100

Unit

V

A

W

_C/W

Document Number: 71963
S-21483—Rev. A, 26-Aug-02

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Si1563DH

W

^

W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

a

a

a

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

VDS = VGS, I

VDS = VGS, I

VDS = 0 V, VGS = "8 V

VDS = 16 V, VGS = 0 V N-Ch 1

VDS = -16 V, VGS = 0 V P-Ch -1

VDS = 16 V, VGS = 0 V, TJ = 85_C N-Ch 5

VDS = -16 V, VGS = 0 V, TJ = 85_C P-Ch -5

VDS w 5 V, VGS = 4.5 V N-Ch 2

VDS p -5 V, VGS = -4.5 V P-Ch -2

VGS = 4.5 V, ID = 1.13 A N-Ch 0.220 0.280

VGS = -4.5 V, ID = -0.88 A P-Ch 0.400 0.490

VGS = 2.5 V, ID = 0.99 A N-Ch 0.281 0.360

VGS = -2.5 V, ID = -0.71 A P-Ch 0.610 0.750

VGS = 1.8 V, ID = 0.20 A N-Ch 0.344 0.450

VGS = -1.8 V, ID = -0.20 A P-Ch 0.850 1.10

VDS = 10 V, ID = 1.13 A N-Ch 2.6

fs

VDS = -10 V, ID = -0.88 A P-Ch 1.5

IS = 0.48 A, VGS = 0 V N-Ch 0.8 1.2

SD

IS = -0.48 A, VGS = 0 V P-Ch -0.8 -1.2

= 100 mA N-Ch 0.45 1

D

= -100 mA P-Ch -0.45 1

D

N-Ch "100
P-Ch "100

V

nA

mA

A

W

S

V

Dynamicb

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Reverse Recovery Time t

Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.

300 ms, duty cycle v 2%.

g

gs

gd

d(on)

r

d(off)

f

rr

N-Channel

V

DS

V

= -10 V, VGS = -4.5 V, ID = -0.88 A

DS

ID ^ 0.5 A, V

I ^ -0.5 A, V

I

D

N-Channel

= 10 V, VGS = 4.5 V, ID = 1.13 A

P-Channel

N-Channel

VDD = 10 V, RL = 20

V

DD

-0.5 A, V

= 4.5 V, RG = 6 W

GEN

P-Channel

P-Channel

= -10 V, RL = 20 W

= -4.5 V, R = 6 W

= -4.5 V, RG = 6

GEN

IF = 0.48 A, di/dt = 100 A/ms

N-Ch 1.25 2
P-Ch 1.2 1.8
N-Ch 0.21
P-Ch 0.3
N-Ch 0.3
P-Ch 0.21
N-Ch 15 25
P-Ch 18 30
N-Ch 22 35
P-Ch 25 40
N-Ch 25 40
P-Ch 15 25
N-Ch 12 20
P-Ch 12 20
N-Ch 30 60
P-Ch 30 60

nC

ns

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Document Number: 71963

S-21483—Rev . A, 26-Aug-02

Si1563DH

New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL

2.0
VGS = 5 thru 2 V

1.5

1.5 V

1.0

- Drain Current (A)I

D

0.5

1 V

0.0

01234

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.6

Output Characteristics Transfer Characteristics

2.0
TC = -55_C

1.5

1.0

- Drain Current (A)I

D

0.5

0.0

0.0 0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)

25_C

Capacitance

160

125_C

W )

- On-Resistance (r

DS(on)

- Gate-to-Source Voltage (V)

GS

V

0.5

0.4

0.3

0.2

0.1

0.0

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

0.0 0.5 1.0 1.5 2.0
ID - Drain Current (A)

Gate Charge

5

VDS = 10 V
I

= 1.28 A

D

4

3

2

1

120

80

C - Capacitance (pF)

40

C

rss

0

048121620

On-Resistance vs. Junction Temperature

1.6

1.4

W)

1.2

(Normalized)

1.0

- On-Resistance (r

DS(on)

0.8

C

oss

VDS - Drain-to-Source Voltage (V)

VGS = 4.5 V
I

= 1.13 A

D

C

iss

0

0.0 0.3 0.6 0.9 1.2 1.5

Document Number: 71963
S-21483—Rev . A, 26-Aug-02

Qg - Total Gate Charge (nC)

0.6

-50 -25 0 25 50 75 100 125 150
T

- Junction Temperature (_C)

J

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Si1563DH

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2

TJ = 150_C

1

- Source Current (A)I

S

0.1
0 0.2 0.6 0.8

0.4

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

TJ = 25_C

1.0 1.2

Threshold Voltage

0.2

W )

- On-Resistance (r

DS(on)

0.6

0.5

0.4
ID = 1.13 A

0.3

0.2

0.1

0.0

012345

Single Pulse Power, Junction-to-Ambient

5

Variance (V)V

GS(th)

0.1

-0.0

-0.1

-0.2

-0.3

-0.4

-50 -25 0 25 50 75 100 125 150

ID = 100 mA

TJ - Temperature (_C)

10

r

DS(on)

1

- Drain Current (A)I

0.1

D

0.01

0.1 1 10 100

4

3

Power (W)

2

1

0

Safe Operating Area, Junction-to-Ambient

I

Limited

DM

Limited

I

D(on)

Limited

TA = 25_C

Single Pulse

BV

Limited

DSS

VDS - Drain-to-Source Voltage (V)

P(t) = 0.0001
P(t) = 0.001

P(t) = 0.01

P(t) = 0.1

P(t) = 1
P(t) = 10

dc

1 600100.10.01

Time (sec)

100

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Document Number: 71963

S-21483—Rev . A, 26-Aug-02

Si1563DH

New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

Duty Cycle = 0.5

0.2

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM - TA = PDMZ

4. Surface Mounted

2

thJA

t
t

thJA

100

1
2

(t)

= 170_C/W

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

2

1

0.1

0.05

Single Pulse

-4

Duty Cycle = 0.5

0.02

10

-3

-2

10

-1

1 10 60010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

0.2

0.1

0.05

-4

0.02

Single Pulse

-3

10

-2

10

-1

11010

Square Wave Pulse Duration (sec)

Document Number: 71963
S-21483—Rev . A, 26-Aug-02

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Si1563DH

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL

3.0

VGS = 5 thru 3 .5V

2.5

2.0

1.5

1.0

- Drain Current (A)I

D

0.5

0.0
01234

1.6

Output Characteristics Transfer Characteristics

3 V

2.5 V

2 V

1.5 V

1 V

VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

3.0

2.5

2.0

1.5

1.0

- Drain Current (A)I

D

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)

TC = -55_C

25_C

Capacitance

160

125_C

W )

- On-Resistance (r

DS(on)

- Gate-to-Source Voltage (V)

GS

V

VGS = 1.8 V

1.2

0.8

0.4

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS = 2.5 V

VGS = 4.5 V

ID - Drain Current (A)

Gate Charge

5

VDS = 10 V
I

= 0.9 A

D

4

3

2

1

120

80

C - Capacitance (pF)

40

C

rss

0

024681012

On-Resistance vs. Junction Temperature

1.6

VGS = 4.5 V
I

1.4

W)

1.2

(Normalized)

1.0

- On-Resistance (r

DS(on)

0.8

D

C

iss

C

oss

V

- Drain-to-Source Voltage (V)

DS

= 0.88 A

0

0.0 0.3 0.6 0.9 1.2 1.5

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Qg - Total Gate Charge (nC)

0.6

-50 -25 0 25 50 75 100 125 150
T

- Junction Temperature (_C)

J

Document Number: 71963

S-21483—Rev . A, 26-Aug-02

Si1563DH

New Product

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2

1

- Source Current (A)I

S

0.1
0 0.2 0.6 0.8

TJ = 150_C

0.4

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage

0.30

0.25

0.20

0.15

0.10

Variance (V)V

0.05

GS(th)

-0.00

-0.05

-0.10

-0.15

-50 -25 0 25 50 75 100 125 150

ID = 100 mA

TJ - Temperature (_C)

TJ = 25_C

1.0 1.2

1.6

1.2

W )

0.8

- On-Resistance (r

0.4

DS(on)

0.0

Power (W)

ID = 0.88 A

012345

Single Pulse Power, Junction-to-Ambient

5

4

3

2

1

0

1 600100.10.01

Time (sec)

100

Document Number: 71963
S-21483—Rev . A, 26-Aug-02

Safe Operating Area, Junction-to-Ambient

10

I

Limited

DM

r

Limited

DS(on)

1

I

D(on)

- Drain Current (A)I

0.1

D

0.01

0.1 1 10 100

Limited

TA = 25_C

Single Pulse

BV

Limited

DSS

VDS - Drain-to-Source Voltage (V)

P(t) = 0.0001

P(t) = 0.001

P(t) = 0.01

P(t) = 0.1
P(t) = 1

P(t) = 10
dc

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Si1563DH

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

Duty Cycle = 0.5

0.2

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM - TA = PDMZ

4. Surface Mounted

2

thJA

t
t

thJA

100

1
2

= 170_C/W

(t)

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

2

0.1

0.05

-4

0.02

Single Pulse

-3

10

-2

10

-1

1 10 60010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

Duty Cycle = 0.5

0.2

0.1

0.05

Single Pulse

-4

0.02

-3

10

-2

10

-1

11010

Square Wave Pulse Duration (sec)

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Document Number: 71963

S-21483—Rev . A, 26-Aug-02

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Notice

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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
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Revision: 08-Apr-05 1