Datasheet Si1555DL Datasheet (Vishay) [ru]

Vishay Siliconix

N-Ch

l

20

V

C/W

Complementary Low-Threshold MOSFET Pair

Si1555DL

PRODUCT SUMMARY

V

(V) r

DS

-

anne

P-Channel −8

0.385 @ VGS = 4.5 V 0.70

0.630 @ VGS = 2.5 V 0.54

0.600 @ VGS = −4.5 V −0.60

0.850 @ VGS = −2.5 V −0.50

1.200 @ VGS = −1.8 V −0.42

S

G

D

(W) I

DS(on)

SOT-363

SC-70 (6-LEADS)

1

1

2

1

3

2

Top View

FEATURES

(A)

D

6

D

1

5

G

2

S

4

2

D TrenchFETr Power MOSFET

Marking Code

RB XX

Ordering Information: Si1555DL-T1

YY

Lot Traceability
and Date Code

Part # Code

Si1555DL-T1—E3 (Lead (Pb)-Free)

Pb-free

Available

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

N-Channel P-Channel

Parameter Symbol

Drain-Source Voltage V

Gate-Source Voltage V

a

TA = 25_C

TA = 85_C

TA = 25_C

TA = 85_C

P

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

I

DM

I

DS

GS

D

S

D

stg

5 secs Steady State 5 secs Steady State

20 −8

"12 "8

"0.70 "0.66 −0.60 −0.57

"0.50 "0.48 −0.43 −0.41

"1.0

0.25 0.23 −0.25 −0.23

0.30 0.27 0.30 0.27

0.16 0.14 0.16 0.14

−55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 5 sec

Steady State

R

thJA

thJF

360 415

400 460

300 350

Unit

A

W

_C/W

Document Number: 71079
S-50245—Rev. D, 21-Feb-05

www.vishay.com

1

Si1555DL

G

Th

ld Vol

V

V

DS(on)

T

l G

Ch

Q

N-Channel

C

VDD = 10 V, RL = 20 W

g

I

D

^ 0.5 A, V

GEN

= 4.5 V, Rg = 6 W

Source-Drain

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

ate

resho

tage

Gate-Body Leakage I

GS(th)

GSS

VDS = VGS, I

VDS = VGS, I

VDS = 0 V, VGS = "12 V N-Ch "100

VDS = 0 V, VGS = "8 V P-Ch "100

= 250 mA N-Ch 0.6 1.4

D

= −250 mA P-Ch −0.45 −1.0

D

nA

VDS = 20 V, VGS = 0 V N-Ch 1

Zero Gate Voltage Drain Current I

DSS

VDS = −8 V, VGS = 0 V P-Ch −1

VDS = 20 V, VGS = 0 V, TJ = 85_C N-Ch 5

mA

VDS = −8 V, VGS = 0 V, TJ = 85_C P-Ch −5

On-State Drain Current

a

I

D(on)

VDS w 5 V, VGS = 4.5 V N-Ch 1.0

VDS p −5 V, VGS = −4.5 V P-Ch −1.0

A

VGS = 4.5 V, ID = 0.66 A N-Ch 0.320 0.385

VGS = −4.5 V, ID = −0.57 A P-Ch 0.510 0.600

Drain-Source On-State Resistance

a

r

DS(on)

VGS = 2.5 V, ID = 0.40 A N-Ch 0.560 0.630

W

VGS = −2.5 V, ID = −0.48 A P-Ch 0.720 0.850

VGS = −1.8 V, ID = −0.20 A P-Ch 1.00 1.200

Forward Transconductance

Diode Forward Voltage

a

a

g

fs

V

SD

VDS = 10 V, ID = 0.66 A N-Ch 1.5

VDS = −4 V, ID = −0.57 A P-Ch 1.2

IS = 0.23 A, VGS = 0 V N-Ch 0.8 1.2

IS = −0.23 A, VGS = 0 V P-Ch −0.8 −1.2

S

V

Dynamicb

ota

ate

arge

Gate-Source Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain
Reverse Recovery Time

Notes
a. Pulse test; pulse width v
b. Guaranteed by design, not subject to production testing.

300 ms, duty cycle v 2%.

g

V

= 10 V, VGS = 4.5 V, ID = 0.66 A

gs

gd

d(on)

r

d(off) V

f

t

rr

DS

V

= −4 V, VGS = −4.5 V, ID = −0.57 A

DS

ID ^ 0.5 A, V

I

^ −0.5 A, V

D

IF = 0.23 A, di/dt = 100 A/ms N-Ch 20 40

IF = −0.23 A, di/dt = 100 A/ms P-Ch 20 40

N-Channel

P-Channel

N-Channel

V

= 10 V, R

GEN

P-Channel

= −4 V, RL = 8 W

DD

GEN

= 20 W

= 4.5 V, Rg = 6 W

= −4.5 V, Rg = 6 W

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

N-Ch 0.8 1.2

P-Ch 1.5 2.3

N-Ch 0.06

P-Ch 0.17

N-Ch 0.30

P-Ch 0.16

N-Ch 10 20

P-Ch 6 12

N-Ch 16 30

P-Ch 25 50

N-Ch 10 20

P-Ch 10 20

N-Ch 10 20

P-Ch 10 20

n

ns

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Document Number: 71079

S-50245—Rev. D, 21-Feb-05

Si1555DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL

1.0

VGS = 5 thru 2.5 V

0.8

0.6

0.4

− Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS − Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

1.0

W )

0.8

Output Characteristics Transfer Characteristics

0.6

VGS = 2.5 V

2 V

1.5 V

1 V

1.0

0.8

0.6

0.4

− Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5

VGS − Gate-to-Source Voltage (V)

TC = 125_C

25_C

Capacitance

100

80

C

60

iss

−55_C

− On-Resistance (r

0.4

DS(on)

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0

− Drain Current (A)

I

D

Gate Charge

5

VDS = 10 V
I

= 0.66 A

D

4

3

2

− Gate-to-Source Voltage (V)

GS

1

V

0

0.0 0.2 0.4 0.6 0.8

Qg − Total Gate Charge (nC)

VGS = 4.5 V

40

C − Capacitance (pF)

20

C

0

048121620

C

oss

rss

VDS − Drain-to-Source Voltage (V)

On-Resistance vs. Junction Temperature

1.6

VGS = 4.5 V
I

= 0.66 A

1.4

1.2

1.0

− On-Resiistance
(Normalized)

DS(on)

r

0.8

0.6

D

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

Document Number: 71079
S-50245—Rev. D, 21-Feb-05

www.vishay.com

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Si1555DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

1

1.0

0.8

W )

TJ = 150_C

− Source Current (A)I

S

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

Threshold Voltage

0.2

0.1

ID = 250 mA

−0.0

−0.1

Variance (V)V

GS(th)

−0.2

−0.3

TJ = 25_C

0.6

0.4

− On-Resistance (r

DS(on)

0.2

0.0

5

4

3

Power (W)

2

1

ID = 0.66 A

012345

Single Pulse Power

−0.4

−50 −25 0 25 50 75 100 125 150

0.1

Thermal Impedance

Normalized Effective Transient

0.01

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2

1

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

−4

10

TJ − Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Single Pulse

−3

10

0

−3

10

10

−1

−2

1 100 6001010

Time (sec)

Notes:

P

DM

t

1

t

2

t

thJA

t

thJA

100

1

2

(t)

= 400_C/W

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

−2

10

−1

1 10 60010

Square Wave Pulse Duration (sec)

Document Number: 71079

S-50245—Rev. D, 21-Feb-05

Si1555DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

Thermal Impedance

Normalized Effective Transient

0.05

0.02

−4

Single Pulse

−3

10

−2

10

Square Wave Pulse Duration (sec)

−1

11010

0.01
10

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL

1.0

VGS = 5 thru 2.5 V TC = −55_C

0.8

0.6

0.4

− Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS − Drain-to-Source Voltage (V)

2 V

1.5 V

1 V

On-Resistance vs. Drain Current

2.0

Output Characteristics Transfer Characteristics

1.0

0.8

0.6

0.4

− Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5

VGS − Gate-to-Source Voltage (V)

25_C

Capacitance

160

125_C

W )

1.5

1.0

− On-Resistance (r

DS(on)

0.5

0.0

0.0 0.2 0.4 0.6 0.8 1.0

Document Number: 71079
S-50245—Rev. D, 21-Feb-05

VGS = 1.8 V

ID − Drain Current (A)

VGS = 2.5 V

VGS = 4.5 V

C

120

80

C − Capacitance (pF)

40

0

02468

C

C

rss

VDS − Drain-to-Source Voltage (V)

iss

oss

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Si1555DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL

Gate Charge

5

VDS = 4 V

= 0.57 A

I

D

4

3

2

− Gate-to-Source Voltage (V)

GS

1

V

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Qg − Total Gate Charge (nC)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

1

TJ = 150_C

On-Resistance vs. Junction Temperature

1.6

VGS = 4.5 V

= 0.57 A

I

D

1.4

1.2

− On-Resiistance

1.0

(Normalized)

DS(on)

r

0.8

0.6

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

2.0

W )

1.5

ID = 0.57 A

1.0

− Source Current (A)I

S

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

Threshold Voltage

0.4

0.3

ID = 250 mA

0.2

0.1

Variance (V)V

GS(th)

0.0

−0.1

−0.2

−50 −25 0 25 50 75 100 125 150

TJ − Temperature (_C)

TJ = 25_C

− On-Resistance (r

0.5

DS(on)

0.0
012345

Single Pulse Power

5

4

3

Power (W)

2

1

0

−3

10

10

−1

−2

1 100 6001010

Time (sec)

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Document Number: 71079

S-50245—Rev. D, 21-Feb-05

Si1555DL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1

Duty Cycle = 0.5

0.2

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

2

thJA

t
t

thJA

100

1

2

= 400_C/W

(t)

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

2

−4

0.1

0.05

0.02

Single Pulse

−3

10

−2

10

−1

1 10 60010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01

10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

−4

−3

10

−2

10

−1

11010

Square Wave Pulse Duration (sec)

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Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?71079.

Document Number: 71079
S-50245—Rev. D, 21-Feb-05

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