Datasheet Si1499DH Datasheet (Vishay) [ru]

New Product

P-Channel 1.2-V (G-S) MOSFET

Si1499DH

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.078 at V

0.095 at V

- 8

0.115 at V

0.153 at V

0.424 at V

(Ω)

DS(on)

= - 4.5 V - 1.6

GS

= - 2.5 V - 1.6

GS

= - 1.8 V - 1.6

GS

= - 1.5 V - 1.6

GS

= - 1.2 V

GS

I

D

- 1.6

(A)

c

b

Qg (Typ)

10.5 nC

FEATURES

• TrenchFET® Power MOSFET

• Ultra-Low On-Resistance

APPLICATIONS

• Load Switch for Portable Devices

- Guaranteed Operation at VGS = 1.2 V
Critical for Optimized Design and Longer

RoHS

COMPLIANT

Battery Life

SOT-363

SC-70 (6-LEADS)

D

1

D

2

G

3

Top V i ew

Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free)

D

6

5

D

S

4

Marking Code

BI XX

Par t #
Code

YY

Lot Traceability
and Date Code

G

S

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

a, b

a, b

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

c, d

TC = 25 °C

T

= 70 °C

C

TA = 25 °C

TA = 70 °C

TC = 25 °C

TA = 25 °C

TC = 25 °C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 8

± 5

c

-1.6

c

- 1.6

a, b, c

- 1.6

a, b, c

- 1.6

c

- 6.5

c

- 1.6

a, b

- 1.3

2.78

1.78

a, b

2.5

a, b

1

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, d

t ≤ 5 s

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. Maximum under Steady State conditions is 125 °C/W.

Document Number: 73338
S-80579-Rev. E, 17-Mar-08

R

thJA

R

thJF

60 80

34 45

°C/W

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1

Si1499DH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Qgs

Q

t

d(on)

t

d(off)

t

d(on)

t

d(off)

gd

R

g

t

r

t

f

t

r

t

f

Gate-Drain Charge

Gate Resistance

Tur n - On D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n - On D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

V

= VGS, ID = ± 5 mA

DS

VDS = 0 V, VGS = ± 5 V

V

= - 8 V, V

DS

V

= - 8 V, V

DS

V

V

V

V

V

GS

GS

≤ 5 V, V

DS

= - 4.5 V, ID = - 2.0 A

GS

= - 2.5 V, ID = - 1.9 A

GS

= - 1.8 V, ID = - 0.8 A

GS

= - 1.5 V, ID = - 0.5 A

GS

= - 1.2 V, ID = - 0.100 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

VDS = - 4 V, ID = - 2.0 A

VDS = - 4 V, V

VDS = - 4 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 1.6 A

GS

f = 1 MHz 9.5 Ω

V

= - 4 V, RL = 2 Ω

DD

≅ - 2 A, V

I

D

≅ - 2 A, V

I

D

V

= - 4.5 V, Rg = 1 Ω

GEN

= - 4 V, RL = 2 Ω

DD

= - 8 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 2.4 A, V

GS

= 0 V

IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C

- 8 V

- 9

- 2.2

mV/°C

- 0.35 - 0.8

- 0.55

± 100 nA

- 1

- 10

- 6.5 A

0.0622 0.078

0.078 0.095

0.094 0.115

0.118 0.153

0.424

8S

650

220

122

10.5 16

1.3

1.9

914

40 60

50 75

60 90

815

40 60

46 70

60 90

- 1.6

- 6.5

- 0.7 - 1.2 V

25 38 ns

711nC

9

16

V

µA

Ω

pFOutput Capacitance

nCGate-Source Charge

ns

A

ns

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Document Number: 73338

S-80579-Rev. E, 17-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si1499DH

Vishay Siliconix

10

8

6

- Drain Current (A)I

4

D

2

0

0.0 0.5 1.0 1.5 2.0

V

Drain-to-Source Voltage (V)

-

DS

VGS = 5 thru 2 V

Output Characteristics

0.25

0.20

0.15

VGS = 1.5 V

VGS = 1.8 V

1.5 V

1 V

10

TC = - 55 °C

8

6

- Drain Current (A)I

4

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5

- Gate-to-Source Voltage (V)

V

GS

25 °C

Transfer Characteristics

1000

800

C

iss

600

125 °C

- On-Resistance (mΩ)

0.10

DS(on)

R

0.05

0.00
0246810

I

- Drain Current (A)

D

VGS = 2.5 V

VGS = 4.5 V

On-Resistance vs. Drain Current and Gate Voltage

5

ID = 2 A

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

024681012

VDS = 4 V

VDS = 5.6 V

Qg - Total Gate Charge (nC)

Gate Charge

400

C - Capacitance (pF)

200

0

012345678

C

rss

VDS - Drain-to-Source Voltage (V)

C

oss

Capacitance

1.6

ID = 2 A

1.4

1.2

- On-Resistance

1.0

(Normalized)

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

VGS = 4.5 V

On-Resistance vs. Junction Temperature

VGS = 2.5 V

Document Number: 73338
S-80579-Rev. E, 17-Mar-08

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3

Si1499DH

100

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

- Source Current (A)I

(V)

GS(th)

V

10

TJ = 150 °C

1

S

0.1

0.0 0.2 0.4 0.6 0.8

V

- Source-to-Drain Voltage (V)

SD

Source-Drain Diode Forward Voltage

0.4

0.3

0.2

0.1

0.0

TJ = 25 °C

1.0 1.4

ID = 250 µA

1.2

- Drain-to-Source On-Resistance (Ω)

DS(on)

R

Power (W)

0.5

ID = 2 A

0.4

0.3

0.2

TJ = 125 °C

0.1

TJ = 25 °C

0.0
012345

- Gate-to-Source Voltage (V)

V

GS

On-Resistance vs. Gate-to-Source Voltage

12

10

8

6

TA = 25 °C

4

- 0.1

- 0.2

- 50 - 25 0 25 50 75 100 125 150

- Temperature (°C)

T

J

Threshold Voltage

Limited by R

10

1

- Drain Current (A) I

D

0.1

0.01

0.1 1 10

* V

Safe Operating Area, Junction-to-Ambient

*

DS(on)

T A = 25 °C

Single Pulse

V

- Drain-to-Source Voltage (V)

DS

minimum VGS at which R

>

GS

DS(on)

2

0

1 10000.10.01 10 100

Time (s)

Single Pulse Power, Junction-to-Ambient

10 µs, 100 µs

1 ms

10 ms

100 ms
1 s
10 s

DC, 100 s

is specified

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Document Number: 73338

S-80579-Rev. E, 17-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

6

5

4

3

Si1499DH

Vishay Siliconix

2

- Drain Current (A)

D

I

Package Limited

1

0

0 25 50 75 100 125 150 175

TC - Case Temperature (°C)

Current Derating*

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

Thermal Impedance

Normalized Ef fecti ve T ransient

0.05

0.02

Single Pulse

0.01
10 100

10 10 1 1 0 60010

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

* The power dissipation PD is based on T
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.

-1 -2 -3 -4

Square Wave Pulse Duration (s)

Notes:

P

DM

t

1

t

- T A = P

JM

2

DM Z th J A

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

= 175 °C, using

J(max)

t

1

t

2

= °C/W

th J A

(t )

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

Thermal Impedance

0.05

0.02

0.02

Normalized Effective Transient

Single Pulse

0.01

-4

10

-3

10

-2

10

-1

11010

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73338.

Document Number: 73338

www.vishay.com

S-80579-Rev. E, 17-Mar-08

5

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Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1