Datasheet SI1473DH Datasheet (Vishay) [ru]

New Product

P-Channel 30-V (D-S) MOSFET

Si1473DH

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

- 30

0.100 at V

0.145 at V

(Ω)

DS(on)

= - 10 V - 1.6

GS

= - 4.5 V - 1.6

GS

c

I

(A)

D

Qg (Typ)

4.1 nC

FEATURES

• TrenchFET® Power MOSFET

APPLICATIONS

• Load Switch for Portable Devices

RoHS

COMPLIANT

SOT-363

SC-70 (6-LEADS)

D

1

D

2

G

3

Top V i ew

Ordering Information: Si1473DH-T1-E3 (Lead (Pb)-free)

D

6

5

D

S

4

Marking Code

BJ XX

Par t #
Code

YY

Lot Traceability
and Date Code

G

S

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

a, b

a, b

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

c, d

TC = 25 °C

T

= 70 °C

C

TA = 25 °C

TA = 70 °C

TC = 25 °C

TA = 25 °C

TC = 25 °C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 30

± 20

c

-1.6

c

- 1.6

a, b, c

- 1.6

a, b, c

- 1.6

c

- 6.5

c

- 1.6

a, b, c

- 1.6

2.78

1.78

a, b

2.5

a, b

1

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, d

t ≤ 5 sec

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 sec.
c. Package limited.
d. Maximum under Steady State conditions is 125 °C/W.

Document Number: 74438
S-70308-Rev. B, 12-Feb-07

R

thJA

R

thJF

60 80

34 45

°C/W

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1

New Product

Si1473DH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Qgs

Q

t

d(on)

t

d(off)

t

d(on)

t

d(off)

gd

R

g

t

r

t

f

t

r

t

f

Gate-Drain Charge

Gate Resistance

Tur n - On D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n - On D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

V

DS

= - 30 V, V

DS

= - 30 V, V

V

GS

V

GS

GS

≤ 5 V, V

DS

= - 10 V, ID = - 2.0 A

= - 4.5 V, ID = - 1.6 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 10 V

GS

VDS = - 10 V, ID = - 2.0 A

VDS = - 15 V, V

VDS = - 15 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 2.5 A

GS

f = 1 MHz 9.2 Ω

V

= - 15 V, RL = 7.5 Ω

DD

≅ - 2 A, V

I

D

V

≅ - 2 A, V

I

D

DD

= - 4.5 V, Rg = 1 Ω

GEN

= - 15 V, RL = 7.5 Ω

= - 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = - 2 A, V

GS

= 0 V

IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C

- 30 V

- 32

4

mV/°C

- 1 - 3 V

- 100 nA

- 1

- 10

µA

- 3 A

0.084 0.100

0.120 0.145

6S

365

68

51

4.1 6.2

1.2

nCGate-Source Charge

1.7

24 40

60 100

25 40

15 25

48

10 20

15 25

612

- 1.6

- 6.5

- 0.85 - 1.2 V

23 35 ns

15 23 nC

9

14

Ω

pFOutput Capacitance

ns

A

ns

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Document Number: 74438

S-70308-Rev. B, 12-Feb-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si1473DH

Vishay Siliconix

)

- On-Resistance (r

DS(on)

10

8

6

4

- Drain Current (A)I
D

2

0

0.0 0.6 1.2 1.8 2.4 3.0

VDS - Drain-to-Source Voltage (V)

VGS = 10 thru 5 V

4 V

Output Characteristics

0.20

0.16

VGS = 4.5 V

0.12

VGS = 10 V

0.0

8

0.04

3 V

2.0

1.6

1.2

TJ = 125 °C

0.8

- Drain Current (A)I
D

0.4

0.0
123 45

25 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

Transfer Characteristics

600

480

C

iss

360

240

C - Capacitance (pF)

120

C

oss

0.00

0.0 1.6 3.2 4.8 6.4 8.0

On-Resistance vs. Drain Current and Gate Voltage

10

ID = 2.5 A

8

6

4

- Gate-to-Source Voltage (V)

2

GS

V

0

02468 10

Document Number: 74438
S-70308-Rev. B, 12-Feb-07

ID - Drain Current (A)

VDS = 10 V

VDS = 15 V

VDS = 20 V

Qg - Total Gate Charge (nC)

Gate Charge

- On-Resistance

DS(on)

r

C

rss

0

061218 24 30

VDS - Drain-to-Source Voltage (V)

Capacitance

1.6

ID = 2 A

1.4

1.2

1.0

(Normalized)

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

TJ- Junction Temperature (°C)

VGS = 10 V

On-Resistance vs. Junction Temperature

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VGS = 4.5 V

3

New Product

Si1473DH

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

10

1

0.1

- Source Current (A)I

S

0.01

0.0 0.3 0.6 0.9 1.2 1.5

TJ = 150 °C

TJ = 25 °C

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.6

0.4

0.2

Variance (V)V

0.0

GS(th)

ID = 250 µA

ID = 5 mA

0.5

ID = 2 A

0.4

)

0.3

0.2

- On-Resistance (r

DS(on)

0.1

0.0
0123 45678 910

TJ = 25 °C

VGS - Gate-to-Source Voltage (V)

TJ = 125 °C

On-Resistance vs. Gate-to-Source Voltage

30

24

8

1

Power (W)

12

- 0.2

- 0.4

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

10

Limited by r

1

- Drain Current (A)I

0.1

D

0.01

0.01

*V

Safe Operating Area, Junction-to-Ambient

DS(on)

TC = 25 °C

Single Pulse

0.1

VDS - Drain-to-Source Voltage (V)
minimum VGS at which r

GS

1

6

0

10 100

isspecified

DS(on)

0.1

Time (sec)

Single Pulse Power, Junction-to-Ambient

1 ms

10 ms

100 ms
1 s

10 s

dc

011100.0 0.01

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Document Number: 74438

S-70308-Rev. B, 12-Feb-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

4.5

Si1473DH

Vishay Siliconix

3.5

3.6

2.7

1.8

- Drain Current (A)

D

I

0.9

0.0
0 25 50 75 100 125 150

Package Limited

TC - Case Temperature (°C)

Current Derating*

Power Dissipation (W)

2.8

2.1

1.4

Power Dissipation (W)

0.7

0.0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Power Derating, Junction-to-Foot

1.20

0.96

0.72

0.48

0.24

0.00
0 25 50 75 100 125 150

TA - Ambient Temperature (°C)

Power Derating, Junction-to-Ambient

*The power dissipation PD is based on T

= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-

J(max)

sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Document Number: 74438

www.vishay.com

S-70308-Rev. B, 12-Feb-07

5

New Product

Si1473DH

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1

Duty Cycle = 0.5

Normalized Effective Transient

Normalized Effective Transient

Thermal Impedance

Thermal Impedance

0.1

0.01
10

1

0.1

0.01

10

0.2

0.1

0.05

0.02

Single Pulse

-4

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

-4

Notes:

P

DM

t

1

t

2

t

100

thJA

thJA

1

t

2

(t)

= 125 °C/W

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

- TA = PDMZ

JM

4. Surface Mounted

-3

10

-2

10

-1

110 100010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

-3

10

-2

10

Square Wave Pulse Duration (sec)

-1

01110

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech­nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74438.

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Document Number: 74438

S-70308-Rev. B, 12-Feb-07

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Revision: 08-Apr-05 1