Datasheet Si1472DH Datasheet (Vishay) [ru]

New Product

N-Channel 30-V (D-S) MOSFET

Si1472DH

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

0.057 at V

30

0.082 at V

(Ω)I

DS(on)

= 10 V

GS

= 4.5 V 4.7

GS

(A) Qg (Typ)

D

a

5.6

5.5

FEATURES

•TrenchFET® Power MOSFET

• 100 % R

and UIS Tested

g

APPLICATIONS

RoHS

COMPLIANT

• Load Switch for Portable Devices

SOT-363

SC-70 (6-LEADS)

D

1

D

2

G

3

Top View

Ordering Information: Si1472DH-T1-E3 (Lead (Pb-free)

D

6

Marking Code

5

D

S

4

AL XX

Y
Y

Lot Traceability
and Date Code

Part # Code

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

a

Avalanche Current

Repetitive Avalanche Energy

Continuous Source-Drain Diode Current

Maximum Power Dissipationa

Operating Junction and Storage Temperature Range

TC = 25 °C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

L = 0.1 mH

= 25 °C

T

C

= 25 °C

T

A

T

= 25 °C

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

30

± 20

V

5.6

I

D

I

DM

I

AS

E

AS

I

S

4.5

b, c

4.2

3.4

b, c

A

15

10

5mJ

1.3

2.3

b, c

A

2.8

P

D

, T

T

J

stg

1.5

1.0

1.8

b, c

b, c

W

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)

Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 5 sec.
d. Maximum under Steady State conditions is 125 °C/W.

Document Number: 73891
S-71344–Rev. B, 09-Jul-07

b, d

t ≤ 5 sec

Steady

R

thJA

R

thJF

60 80

34 45

°C/W

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New Product

Si1472DH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Drain-Source Breakdown Voltage
V

Temperature Coefficient ΔVDS/T

DS

Temperature Coefficient ΔV

V

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

a

a

Forward Transconductance

Dynamic

b

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off DelayTime

Fall Ti me

Tur n - O n D e l ay Time

Rise Time

Turn-Off DelayTime

Fall Ti me

V

DS

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

J

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

V

DS

V

V

DS

V

DS

I

D

≅ 2.8 A, V

I

D

= 0 V, ID = 250 µA

GS

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 30 V, VGS = 0 V

DS

= 30 V, V

V

DS

V

GS

V

GS

V

= 15 V, V

DS

= 15 V, V

= 24V, V

DS

= 0 V, TJ = 85 °C

GS

= ≥ 5 V, V

= 10 V 15 A

GS

= 10 V, ID = 4.2 A

= 4.5 V, ID = 3.5 A

= 15 V, ID = 4.2 A

= 0 V, f = 1 MHz

GS

= 10 V, ID = 4.2 A

GS

= 4.5 V, ID = 4.2 A

GS

f = 1 MHz 7.1 10.6 Ω

V

= 15 V, RL = 4.4 Ω

DD

≅ 3.4 A, V

V

DD

= 10 V, Rg = 1 Ω

GEN

= 15 V, RL = 5.4 Ω

= 4.5 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 1.8 A

IF = 2.3 A, di/dt = 100 A/µs

30 V

25.15

5.6

mV/°C

13V

± 100 nA

1nA

10 µA

0.046 0.057

0.065 0.082

Ω

8.5 S

380

75

pFOutput Capacitance

45

711

3.3 5

1.2

nC

1.0

7.0 11

56 84

18 27

ns

5.5 9

15 23

95 143

12 18

ns

711

2.3

15

A

0.8 1.2 V

12.3 19 nC

57.5

7.6

nsReverse Recovery Fall Time

4.7

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 73891

S-71344–Rev. B, 09-Jul-07

New Product

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

15

V = 10 thru 5 V

GS

12

)A( tnerruC niarD –I

V =

GS

9

6

D

V =

3

0

0.0 0.5 1.0 1.5 2.0 2.5

V

– Drain-to-Source Voltage (V)

DS

GS

Output Characteristics

4 V

3 V

3

)A( tnerruC niarD –I

2

D

1

0

Si1472DH

Vishay Siliconix

TC = 125 °C

T =

25 °C

C

- 55 °C

T =

C

012345

– Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics curves vs. Temp

0.10

0.08

(Ω) ecnatsis

0.06

e
R-nO

–

0.04

)no(SD

r

0.02

0.00
03691215

I

D

VGS = 4.5 V

VGS = 10 V

– Drain Current (A)

On-Resistance vs. Drain Current

10

8

6

4

2

ID = 4.2 A

VDS = 15 V

VGS = 24 V

)V( e

g
atl

o
V ecruoS-ot-etaG

–

SG

V

500

C

400

)Fp( ecnati

300

c
a
pa

C

200

–
C

100

C

0

0 6 12 18 24 30

C

oss

rss

VDS – Drain-to-Source Voltage (V)

iss

Capacitance

1.8

1.5

ecnatsis

)dezilam

e
R-nO –

1.2

r
oN(

)no(SD

r

0.9

VGS = 10 V

ID = 4.2 A

VGS = 4.5 V

ID = 3.4 A

0

02468

Document Number: 73891
S-71344–Rev. B, 09-Jul-07

Qg – Total Gate Charge (nC)

- Gate Charge

Q

g

0.6

- 50 - 25 0 25 50 75 100 125 150

T

– Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

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New Product

Si1472DH

Vishay Siliconix

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

10

0.10

(Ω) ecnatsiseR-nO ecruoS-ot-niarD –

ID = 4.2 A

)A( tnerruC ecruoS –I

1

0.1

S

0.01
0

TJ = 150 °C

0.2

– Source-to-Drain Voltage (V)

V

SD

T

= 25 °C

J

10.80.60.4

Source-Drain Diode Forward Voltage

2.6

2.4

2.2

)
V(

2.0

)ht(

S
G

1.8

V

1.6

ID = 250 µA

0.08

0.06

0.04

)no(SD

r

0.02
0246810

– Gate-to-Source Voltage (V)

V

GS

r

vs VGS vs Temperature

DS(on)

30

25

20

) W ( r e w o P

15

10

TA= 125 °C

TA= 25 °C

1.4

1.2

- 50 - 25 0 25 50 75 100 125 150

– Temperature (°C)

T

J

Threshold Voltage

100

)
A(

tn
e

r
r

uC

niarD

–I

D

0.01

*Limited by r

10

1

0.1

TA = 25 °C

Single Pulse

0.1 1 10 100
V

DS

*VGS minimum VGS at which r

Safe Operating Area, Junction-to-Ambient

DS(on)

BVDSS Limited

– Drain-to-Source Voltage (V)

DS(on)

is specified

5

0

P(t) = 10 ms

P(t) = 100 ms

P(t) = 1 s

P(t) = 10 s

dc

0.1

1 600 100 0.001

Time (sec)

Single Pulse Power

10 0.01

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Document Number: 73891

S-71344–Rev. B, 09-Jul-07

New Product

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

6.0

3.5

Si1472DH

Vishay Siliconix

5.0

)A( tnerruC niarD –

D

I

Package Limited

4.0

3.0

2.0

1.0

0.0
0 25 50 75 100 125 150

TC – Case Temperature (°C)

Current Derating*

3.0

2.5

2.0

r
e

wo
P

1.5

1.0

0.5

0.0
0 25 50 75 100 125 150

– Case Temperature (°C)

T

C

Power Derating

* The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

limit.

Document Number: 73891

www.vishay.com

S-71344–Rev. B, 09-Jul-07

5

New Product

Si1472DH

Vishay Siliconix

TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

2

tneisnarT evitceffE dezilamroN

1

Duty Cycle = 0.5

ecnadepmI lamrehT

0.2

Notes:

P

DM

t

1

t

– TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

t

1

t

2

= 100 °C/W

thJA

(t)

thJA

100

0.1

0.01

0.1

0.05

0.02

Single Pulse

-4

10

-3

10

-2

10

-1

110 60010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

tneisnarT

e
v

i

tc
e

f

f
E

de
zi

lamroN

1

Duty Cycle = 0.5

ecnade

0.1

0.2

0.1

0.05

p
mI
lam

r
e
h
T

0.02

Single Pulse

0.01

-4

10

-3

10

-2

10

-1

11010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73891.

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Document Number: 73891

S-71344–Rev. B, 09-Jul-07

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1