Datasheet Si1450DH Datasheet (Vishay) [ru]

Si1450DH

PRODUCT SUMMARY

VDS (V) r

0.047 at V

8

0.051 at V

0.058 at V

0.069 at V

SOT-363

SC-70 (6-LEADS)

D

1

D

2

G

3

DS(on)

(Ω)

GS

GS

GS

GS

6

5

4

= 4.5 V

= 2.5 V

= 1.8 V

= 1.5 V

D

D

S

New Product

N-Channel 8-V (D-S) MOSFET

FEATURES

I

(A)

D

4.0

4.0

4.0

4.0

a

Qg (Typ)

a

a

4.24 nC

a

a

Marking Code

AH XX

Y
Y

Part # Code

• TrenchFET® Power MOSFET: 1.5 V Rated

• 100 % R

Tested

g

APPLICATIONS

• Load Switch for Portable Applications

- Guaranteed Operation at VGS = 1.5 V
Critical for Optimized Design and Space Savings

Lot Traceability
and Date Code

G

Vishay Siliconix

RoHS

COMPLIANT

D

Top Vi ew

Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

S

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

T

= 25 °C

C

T

= 70 °C

C

TA = 25 °C
TA = 70 °C

= 25 °C

T

C

= 25 °C

T

A

T

= 25 °C

C

T

= 70 °C

C

= 25 °C

T

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

8

± 5

a

6.04

a

4.8

a

4.53

a

3.62
15

2.3

c

1.3

2.78

1.78

b, c

1.56

b, c

1.0

- 55 to 150
260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 5 sec

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 125 °C/W.

R

thJA

R

thJF

60 80
34 45

°C/W

Document Number: 74275
S-62079-Rev. A, 23-Oct-06

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1

Si1450DH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 5 V

V

V

= 8 V, V

DS

= 8 V, V

DS

≤ 5 V, V

DS

V

= 4.5 V, ID = 4.0 A

GS

V

= 2.5 V, ID = 4.0 A

GS

V

= 1.8 V, ID = 4.0 A

GS

V

= 1.5 V, ID = 1.28 A

GS

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 4.5 V

GS

VDS = 4 V, ID = 4.0 A

VDS = 4 V, V

VDS = 4 V, V

V

= 4 V, V

DS

= 0 V, f = 1 MHz

GS

= 5 V, ID = 4.0 A

GS

= 4.5 V, ID = 4.0 A

GS

f = 1 MHz 7.3 11 Ω

V

= 4 V, RL = 1.11 Ω

DD

≅ 3.6 A, V

I

D

= 4.5 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 2.6 A, V

GS

= 0 V

IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C

8V

8.32

- 2.7

mV/°C

0.3 1 V

± 100 ns

1

10

µA

15 A

0.039 0.047

0.042 0.051

0.048 0.058

Ω

0.053 0.069

15.5 S

535

120

pFOutput Capacitance

61

4.7 7.05

4.24 6.4

1.2

nC

0.810

812

73 110

18 27

ns

57.5

2.6

15

A

0.8 1.2 V

14.3 21.45 ns

3.6 5.4 nC

6.8

7.5

ns

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Document Number: 74275

S-62079-Rev. A, 23-Oct-06

TYPICAL CHARACTERISTICS 25 °C, unless noted

Si1450DH

Vishay Siliconix

15

12

)A( tnerruC niarD –I

V = 5 thru 2 V

GS

3

)A( tnerruC niarD –I

2

9

V = 1.5 V

GS

6

D

D

1

TC = 125 °C

TC = 25 °C

TC = - 55 °C

3

V = 1 V

GS

0

0.0 0.5 1.0 1.5 2.0 2.5

V

– Drain-to-Source Voltage (V)

DS

Output Characteristics

0.10

0

0.0 0.5 1.0 1.5 2.0

– Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

800

VGS = 1.5 V

)

0.08

( ecnatsis

0.06

e
R-nO

–

0.04

)no(SD

r

VGS = 1.5 V

VGS = 2.5 V

VGS = 4.5 V

0.02

)Fp( ecnati

600

c

a

400

pa
C

–

C

iss

C

200

C

oss

0.00
0 3 6 9 12 15

5

)V( e

g
atl

o
V ecruoS-ot-etaG

ID = 4.4 A

4

3

2

–

SG

1

V

0

Document Number: 74275
S-62079-Rev. A, 23-Oct-06

– Drain Current (A)

I

D

r

vs. Drain Current

DS(on)

VDS = 4 V

320

Qg – Total Gate Charge (nC)

Gate Charge

VGS = 6.4 V

5

C

rss

0

02468

VDS – Drain-to-Source Voltage (V)

Capacitance

1.6

VGS = 4.5 V

I

= 4.6 A

1.4

ecnats

)d

is

1.2

ez

eR

il

-nO

a
mroN(

–

1.0

)
n
o

(
SD

r

VGS = 2.5 V,

= 1.8 V,

V

GS

= 4.4 A

I

D

= 4.25 A

I

D

D

VGS = 1.5 V

I

D

= 1.2 A

0.8

6

0.6

- 50 - 25 0 25 50 75 100 125 150

T

– Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

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Si1450DH

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless noted

10

TJ = 150 °C

A(
t

ner

1

r
u

C
e

cru
o

S I

−)

0.1

S

0.01

0 0.2

V

0.4

− Source-to-Drain Voltage (V)

SD

Forward Diode Voltage vs. Temp

0.8

0.7

0.6

)
V(

)ht(

0.5

S
G

V

0.4

TJ = 25 °C

0.6 0.8 1

ID = 250 µA

0.08

(Ω ecnatsiseR-nO ecruoS-ot-niarD –)

)no(SD

r

)W(

rewoP

ID = 4.4 A

0.06

TA= 125 °C

0.04

TA= 25 °C

0.02

0.00
0123 45

– Gate-to-Source Voltage (V)

V

GS

r

30

25

20

15

10

vs. VGS vs. Temperature

DS(on)

0.3

0.2

- 50 - 25 0 25 50 75 100 125 150

– Temperature (°C)

T

J

Threshold Voltage

100

*Limited by

10

)A( tner

1

ru
C

ni
a

rD–I

0.1

D

0.01

TA = 25 °C

0.001

Single Pulse

0.1 1 10 100

*VGS minimum VGS at which r

Safe Operating Area, Junction-to-Case

5

0

r

DS(on)

10 ms

100 ms

1 s

10 s

dc

BVDSS Limited

VDS – Drain-to-Source Voltage (V)

DS(on)

is specified

0.1

1 6001000.001

Time (sec)

Single Pulse Power

100.01

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Document Number: 74275

S-62079-Rev. A, 23-Oct-06

TYPICAL CHARACTERISTICS 25 °C, unless noted

Si1450DH

Vishay Siliconix

8

3.6

3.2

6

)A( tnerruC niarD –

2.8

)W( noitapissiD rewoP

2.4

2.0

4

Package Limited

1.6

1.2

D

I

2

0.8

0.4

0

0 255075100125150

TC – Case Temperature (°C)

Current Derating*

0.0
0 25 50 75 100 125 150

TC – Case Temperature ( C)

Power Derating

2

tneisnarT evitceffE dezilamroN

1

Duty Cycle = 0.5

ecnadepmI lamrehT

0.2

Notes:

P

DM

t

1

t

– TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

thJA

100

t

1

t

2

(t)

= 100 °C/W

0.1

0.01

0.1

0.05

0.02

Single Pulse

-4

10

-3

10

-2

10

-1

110 60010

Square Wave Pulse Duration (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

*The power dissipation PD is based on T
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Document Number: 74275

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-

J(max)

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S-62079-Rev. A, 23-Oct-06

5

Si1450DH

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless noted

2

tneisnarT

e
v

i

tc
e

f

f
E

de
zi

lamroN

1

Duty Cycle = 0.5

ecnade

0.1

0.01
10

0.2

0.1

0.05

0.02

-4

Single Pulse

-3

10

-2

10

Square Wave Pulse Duration (sec)

-1

11010

p
mI
lam

r
e
h
T

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech­nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74275.

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Document Number: 74275

S-62079-Rev. A, 23-Oct-06

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Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
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Revision: 08-Apr-05 1