Datasheet Si1419DH Datasheet (Vishay) [ru]

Si1419DH

200

Conti

t (TJ = 150_C)

a

I

C/W

PRODUCT SUMMARY

V

(V) r

DS

−

−

5.0 @ VGS = −10 V

5.1 @ VGS = −6 V −0.37

SC-70 (6-LEADS)

1

D

2

D

3

G

SOT-363

DS(on)

(W) I

New Product

P-Channel 200-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFETS

(A) Qg (T yp)

D

−0.38

D

6

5

D

S

4

4.1

Marking Code

BH XX

Part # Code

YY

Lot Traceability
and Date Code

D Small, Thermally Enhanced SC-70

Package

D Ultra Low On-Resistance

APPLICATIONS

D Active Clamp Switch in DC/DC Power

Supplies

Vishay Siliconix

S

G

D

Pb-free

Available

Top View

Ordering Information: Si1419DH-T1—E3

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I

Continuous Diode Current (Diode Conduction)

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C

TA = 85_C

L = 0.1 mH

TA = 25_C

TA = 85_C

DM

I

I

AS

E

P

DS

GS

AS

D

S

D

stg

−0.38

−0.27 −0.22

−1.3 −0.83

1.56 1.0

0.81 0.52

−200

"20

−0.5

−1.9

0.18 mJ

−55 to 150 _C

THERMAL RESISTANCE RATINGS

V

−0.3

A

W

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 73241
S-50368—Rev. B, 28-Feb-05

Parameter Symbol Typical Maximum Unit

a

t v 5 sec

Steady State

R

thJA

thJF

60 80

100 125

34 45

_C/W

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1

Si1419DH

DS

,

GS

,

D

VDD = −100 V, RL = 100 W

g

ns

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g

gs

gd

g

r

f

rr

rr

conditions for extended periods may affect device reliability.

VDS = VGS, I

VDS = 0 V, VGS = "20 V

= −100 mA −2.5 −4.5 V

D

"100 nA

VDS = −200 V, VGS = 0 V −1

VDS = −200 V, VGS = 0 V, TJ = 85_C −5

VDS = −15 V, VGS = −10 V −0.5 A

VGS = −10 V, ID = −0.4 A 3.98 5.0

VGS = −6 V, ID = −0.4 A 4.06 5.1

VDS = −10 V, ID = −0.4 A 1.0 S

IS = −0.4 A, VGS = 0 V −0.80 −1.1 V

4.1 6.2

V

= −100 V, VGS = −10 V, ID = −0.4 A 0.8 nC

DS

1.3

f = 1.0 MHz 17 W

6 9

VDD = −100 V, RL = 100 W

ID ^ −1 A, V

= −4.5 V, Rg = 6 W

GEN

12 18

12 18

12 18

IF = −0.4 A, di/dt = 100 A/ms

55 83

130 200 nC

mA

W

ns

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2

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.5

0.4

0.3

0.2

− Drain Current (A)I

D

0.1

0.0
0246810

Output Characteristics Transfer Characteristics

VGS = 10 thru 5 V

4 V

VDS − Drain-to-Source Voltage (V)

0.5

0.4

0.3

0.2

− Drain Current (A)I

D

0.1

TC = 125_C

25_C

0.0
012345

VGS − Gate-to-Source Voltage (V)

Document Number: 73241

S-50368—Rev. B, 28-Feb-05

−55_C

Si1419DH

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current

VGS = 6 V

VGS = 10 V

ID − Drain Current (A)

Gate Charge

VGS = 100 V
I

= 0.4 A

D

C − Capacitance (pF)

W )

− On-Resistance (r

DS(on)

8

7

6

5

4

3

2

1

0

0.0 0.1 0.2 0.3 0.4 0.5

10

8

Vishay Siliconix

250

200

150

100

50

C

rss

0

0 30 60 90 120 150

V

On-Resistance vs. Junction Temperature

2.2

1.9

VGS = 10 V
I

= 0.4 A

D

Capacitance

C

iss

C

oss

− Drain-to-Source Voltage (V)

DS

− Gate-to-Source Voltage (V)

GS

V

− Source Current (A)I

S

6

4

2

0

0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2

Qg − Total Gate Charge (nC)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2

1

TJ = 150_C

TJ = 25_C

0.1

1.6

1.3

− On-Resiistance
(Normalized)

1.0

DS(on)

r

0.7

0.4

−50 −25 0 25 50 75 100 125 150

12

10

W )

8

6

− On-Resistance (r
4

DS(on)

2

T

− Junction Temperature (_C)

J

ID = 0.4 A

0.01

0 0.3 0.6 0.9

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

Document Number: 73241
S-50368—Rev. B, 28-Feb-05

1.2 1.5

0

0246810

www.vishay.com

3

Si1419DH

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage

1.0

0.7

0.4

Variance (V)V

0.1

GS(th)

−0.2

−0.5

−50 −25 0 25 50 75 100 125 150

ID = 250 mA

TJ − Temperature (_C)

0.1

Power (W)

1

*r

Limited

Safe Operating Area

DS(on)

Single Pulse Power, Junction-to-Ambient

12

10

8

6

4

2

0

10 ms

100 ms

1 ms

TA = 25_C

Single Pulse

1 1000100.10.01

Time (sec)

100

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

−4

Single Pulse

−3

10

10 ms

100 ms

− Drain Current (A)I

0.01

D

TA = 25_C

Single Pulse

1 s, 10 s

100 s, dc

0.001

0.1 10 1000

*V

1

− Drain-to-Source Voltage (V)

V

DS

u minimum VGS at which r

GS

DS(on)

100

is specified

Normalized Thermal Transient Impedance, Junction-to-Ambient

Notes:

P

DM

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

−2

10

Square Wave Pulse Duration (sec)

−1

1 10 60010

t

1

t

2

t

1

t

2

= 100_C/W

thJA

(t)

thJA

100

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Document Number: 73241

S-50368—Rev. B, 28-Feb-05

Si1419DH

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.01

0.05

0.02

Single Pulse

−4

10

−3

10

−2

10

Square Wave Pulse Duration (sec)

Thermal Impedance

Normalized Effective Transient

Vishay Siliconix

−1

11010

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactur ed at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?73241.

Document Number: 73241
S-50368—Rev. B, 28-Feb-05

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Notice

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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1