Datasheet Si1411DH Datasheet (Vishay) [ru]

Si1411DH

150

Conti

t (TJ = 150_C)

a

I

C/W

PRODUCT SUMMARY

V

(V) r

DS

−

−

2.6 @ VGS = −10 V

2.7 @ VGS = −6 V −0.51

SC-70 (6-LEADS)

1

D

2

D

3

G

SOT-363

DS(on)

Top View

(W) I

New Product

P-Channel 150-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFETS

(A) Qg (T yp)

D

−0.52

D

6

5

D

S

4

Ordering Information: Si1411DH-T1—E3

4.2 nC

Marking Code

BG XX

Part # Code

YY

D Small, Thermally Enhanced SC-70 Package
D Ultra Low On-Resistance

APPLICATIONS

D Active Clamp Circuits in DC/DC Power

Supplies

Lot Traceability
and Date Code

Vishay Siliconix

S

G

D

P-Channel MOSFET

Product Is

Completely

Pb-free

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I

Continuous Diode Current (Diode Conduction)

Single Pulse Avalanche Current

Single Pluse Avalanch Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C

TA = 85_C

L = 0.1 mH

TA = 25_C

TA = 85_C

DM

I

I

AS

E

P

DS

GS

AS

D

S

D

stg

−0.52

−0.38 −0.3

−1.3 −0.83

1.56 1.0

0.81 0.52

−150

"20

−0.8

−2.1

0.22 mJ

−55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 5 sec

Steady State

R

thJA

thJF

60 80

100 125

34 45

V

−0.42

A

W

_C/W

Document Number: 73242
S-50461—Rev. B, 14-Mar-05

www.vishay.com

1

Si1411DH

DS

,

GS

,

D

VDD = −75 V, RL = 75 W

g

ns

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

V

d(on)

d(off)

fs

SD

g

gs

gd

g

r

f

rr

rr

conditions for extended periods may affect device reliability.

VDS = VGS, I

VDS = 0 V, VGS = "20 V

= −100 mA −2.5 −4.5 V

D

"100 nA

VDS = −150 V, VGS = 0 V −1

VDS = −150 V, VGS = 0 V, TJ = 85_C −5

VDS = −15 V, VGS = −10 V −0.8 A

VGS = −10 V, ID = −0.5 A 2.05 2.6

VGS = −6 V, ID = −0.5 A 2.14 2.7

VDS = −10 V, ID = −0.5 A 1.5 S

IS = −1.4 A, VGS = 0 V −0.80 −1.1 V

4.2 6.3

V

= −75 V, VGS = −10 V, ID = −0.5 A 0.9 nC

DS

1.3

f = 1.0 MHz 8.5 W

4.5 7

VDD = −75 V, RL = 75 W

ID ^ −1 A, V

GEN

= −4.5 V, Rg = 6 W

11 17

9 14

11 17

IF = −0.5 A, di/dt = 100 A/ms

36 55

65 100 nC

mA

W

ns

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.8

0.7

VGS = 10 thru 5 V

0.6

0.5

0.4

0.3

− Drain Current (A)I

D

0.2

0.1

4 V

3 V

0.0
0246810

VDS − Drain-to-Source Voltage (V)

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Output Characteristics Transfer Characteristics

0.8

0.7

0.6

0.5

0.4

0.3

− Drain Current (A)I

D

0.2

TC = 125_C

25_C

0.1

0.0
012345

VGS − Gate-to-Source Voltage (V)

Document Number: 73242

S-50461—Rev. B, 14-Mar-05

−55_C

Si1411DH

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current

VGS = 6 V

VGS = 10 V

ID − Drain Current (A)

Gate Charge

VDS = 75 V
I

= 0.5 A

D

C − Capacitance (pF)

W )

− On-Resistance (r

DS(on)

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

10

8

Vishay Siliconix

250

200

150

100

50

C

rss

0

0 30 60 90 120 150

V

On-Resistance vs. Junction Temperature

2.5

VGS = 10 V
I

= 0.5 A

2.0

D

Capacitance

C

iss

C

oss

− Drain-to-Source Voltage (V)

DS

− Gate-to-Source Voltage (V)

GS

V

0.1

− Source Current (A)I

S

6

4

2

0

0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2

Qg − Total Gate Charge (nC)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2

1

TJ = 150_C

TJ = 25_C

1.5

1.0

− On-Resiistance
(Normalized)

DS(on)

r

0.5

0.0

−50 −25 0 25 50 75 100 125 150

6

5

W )

4

3

− On-Resistance (r
2

DS(on)

1

T

− Junction Temperature (_C)

J

ID = 0.5 A

0.01

0 0.3 0.6 0.9

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

Document Number: 73242
S-50461—Rev. B, 14-Mar-05

1.2 1.5

0

0246810

www.vishay.com

3

Si1411DH

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Threshold Voltage

1.3

1.0

0.7

0.4

Variance (V)V

GS(th)

0.1

−0.2

−0.5

−50 −25 0 25 50 75 100 125 150

ID = 250 mA

TJ − Temperature (_C)

1

* Limited by

r

DS(on)

0.1

Power (W)

Safe Operating Area

Single Pulse Power, Junction-to-Ambient

35

28

21

14

7

0

10 ms

100 ms

1 ms

10 ms

TA = 25_C

Single Pulse

0.1 1010.010.001

Time (sec)

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

−4

10

− Drain Current (A)I

0.01

D

TA = 25_C

Single Pulse

0.001

DS(on)

100

0.1 10 1000

*V

1

− Drain-to-Source Voltage (V)

V

DS

u minimum VGS at which r

GS

Normalized Thermal Transient Impedance, Junction-to-Ambient

Single Pulse

−3

−2

10

−1

1 10 60010

Square Wave Pulse Duration (sec)

100 ms

1 s, 10 s

100 s, dc

is specified

Notes:

P

DM

t

1

t

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM − TA = PDMZ

4. Surface Mounted

2

thJA

t
t

thJA

100

1

2

= 100_C/W

(t)

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Document Number: 73242

S-50461—Rev. B, 14-Mar-05

Si1411DH

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.01

0.05

0.02

Single Pulse

−4

10

−3

10

−2

10

Square Wave Pulse Duration (sec)

Thermal Impedance

Normalized Effective Transient

Vishay Siliconix

−1

11010

Vishay Siliconix maintains worldwide manuf ac t ur ing capability. Produc ts m ay be manufac tured at one of several qualified locations. Reliability data f or Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see

http://www.vishay.com/ppg?73242.

Document Number: 73242
S-50461—Rev. B, 14-Mar-05

www.vishay.com

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Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
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Revision: 08-Apr-05 1