Datasheet Si1405BDH Datasheet (Vishay) [ru]

New Product

P-Channel 1.8-V (G-S) MOSFET

Si1405BDH

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

0.112 at V

- 8

0.210 at V

(Ω)

DS(on)

= - 4.5 V - 1.6

GS

= - 2.5 V - 1.6

GS

= - 1.8 V - 1.6

GS

c

I

(A)

D

Qg (Typ)

3.67 nC0.160 at V

FEATURES

• TrenchFET® Power MOSFET

APPLICATIONS

• Load Switch for Portable Devices

RoHS

COMPLIANT

SOT-363

SC-70 (6-LEADS)

D

1

D

2

G

3

Top V i ew

Ordering Information: Si1405BDH-T1-E3 (Lead (Pb)-free)

D

6

5

D

S

4

Marking Code

BO XX

Par t #
Code

YY

Lot Traceability
and Date Code

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a, b

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

Maximum Power Dissipation

a, b

a, b

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

c, d

TC = 25 °C

T

= 70 °C

C

TA = 25 °C

TA = 70 °C

TC = 25 °C

TA = 25 °C

TC = 25 °C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 8

± 8

c

-1.6

c

- 1.6

a, b, c

- 1.6

a, b, c

- 1.6

c

- 8

c

- 1.6

a, b

- 1.47

2.27

1.45

a, b

1.47

a, b

0.95

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, d

t ≤ 5 s

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. Maximum under Steady State conditions is 125 °C/W.

Document Number: 74634
S-71945-Rev. A, 10-Sep-07

R

thJA

R

thJF

70 85

44 55

°C/W

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New Product

Si1405BDH

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

a

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Qgs

Q

t

d(on)

t

d(off)

gd

R

g

t

r

t

f

Gate-Drain Charge

Gate Resistance

Tur n - On D e l a y T im e

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

VGS = 0 V, ID = - 250 µA

ID = - 250 µA

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = - 8 V

V

V

DS

= - 8 V, V

DS

= - 8 V, V

V

V

V

GS

≤ 5 V, V

DS

= - 4.5 V, ID = - 2.8 A

GS

= - 2.5 V, ID = - 2.3 A

GS

= - 1.8 V, ID = - 0.5 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

VDS = - 4 V, ID = - 2.8 A

VDS = - 4 V, V

VDS = - 4 V, V

= 0 V, f = 1 MHz

GS

= - 4.5 V, ID = - 2.8 A

GS

f = 1 MHz 6.3 Ω

V

= - 4 V, RL = 1.78 Ω

DD

≅ - 2.25 A, V

I

D

= - 4.5 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 1.4 A, V

GS

= 0 V

IF = - 1.4 A, di/dt = 100 A/µs, TJ = 25 °C

- 8 V

- 5.4

1.98

mV/°C

- 0.45 - 0.95 V

- 100 nA

- 1

- 10

- 8 A

0.091 0.112

0.132 0.160

0.171 0.205

4.8 S

305

108

66

3.67 5.5

0.61

0.98

10 15

26 39

16 24

7 10.5

- 1.6

- 8

- 0.8 - 1.2 V

23 35 ns

5.8 8.7 nC

6

17

µA

Ω

pFOutput Capacitance

nCGate-Source Charge

ns

A

ns

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Document Number: 74634

S-71945-Rev. A, 10-Sep-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si1405BDH

Vishay Siliconix

8

VGS = 5 V thru 2.5 V

6

VGS = 2 V

4

- Drain Current (A)I

D

2

0

01234

VDS - Drain-to-Source Voltage (V)

VGS = 1.5 V

Output Characteristics

0.5

0.4

VGS = 1.8 V

0.3

3.0

2.4

1.8

1.2

- Drain Current (A)I

D

0.6

0.0

0.0 0.4 0.8 1.2 1.6 2.0

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

Transfer Characteristics

500

400

C

iss

300

TJ = - 55 °C

- D to S On-Resistance (Ω)r

DS(on)

0.2

0.1

0.0
02468

VGS = 2.5 V

VGS = 4.5 V

ID - Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

5

- Gate-to-Source Voltage (V)

GS

V

ID = 2.8 A

4

3

2

1

0

012345

VDS = 4 V

VDS = 6.4 V

Qg - Total Gate Charge (nC)

Gate Charge

200

C - Capacitance (pF)

100

0

02468

1.8

1.5

1.2

- On-Resistance r

(Normalized)

0.9

DS(on)

0.6

0.3

- 50 - 25 0 25 50 75 100 125 150

On-Resistance vs. Junction Temperature

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

VGS = 4.5 V, ID = 2.8 A

= 2.5 V, ID = 2.3 A

V

GS

VGS = 1.8 V, ID = 0.5 A

TJ- Junction Temperature (°C)

Document Number: 74634
S-71945-Rev. A, 10-Sep-07

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New Product

Si1405BDH

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

1

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 °C

TJ = 25 °C

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.9

(V)V

GS(th)

0.8

0.7

0.6

ID = 250 µA

- On-Resistance (Ω)r

DS(on)

Power (W)

0.24

ID = 2.8 A

0.18

TA = 125 °C

0.12

0.06

0.00
012345

VGS - Gate-to-Source Voltage (V)

TA = 25 °C

On-Resistance vs. Gate-to-Source Voltage

30

25

20

15

10

0.5

0.4

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

10

Limited by r

1

0.1

- Drain Current (A)

D

I

0.01

0.001

0.1

TA = 25 °C

Single Pulse

* V

GS

Safe Operating Area, Junction-to-Ambient

DS(on)*

BVDSS Limited

1

V

- Drain-to-Source Voltage (V)

DS

minimum VGS at which r

DS(on)

5

0

0.1

Time (s)

100.01

Single Pulse Power, Junction-to-Ambient

100 ms

1 s

10 s

DC

10

is specified

0061 1000.001

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Document Number: 74634

S-71945-Rev. A, 10-Sep-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si1405BDH

Vishay Siliconix

5

4

3

3.0

2.4

1.8

Power

2

Package Limited

- Drain Current (A)

D

I

1

0

0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

* The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

1.2

0.6

0.0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Power Derating

limit.

2

1

Duty Cycle = 0.5

0.2

Notes:

P

DM

t

1

t

- TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

t
t

thJA

100

1

2

=100 °C/W

(t)

00601110

0.1

Thermal Impedance

Normalized Effective Transient

0.01

-4

10

0.1

0.05

0.02

Single Pulse

-3

10

-2

10

-1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74634.

Document Number: 74634
S-71945-Rev. A, 10-Sep-07

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Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1