Datasheet Si1403BDL Datasheet (Vishay) [ru]

New Product

P-Channel 2.5-V (G-S) MOSFET

Si1403BDL

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) r

0.150 at V

- 20

0.175 at V

0.265 at V

(Ω)I

DS(on)

= - 4.5 V

GS

= - 3.6 V

GS

= - 2.5 V

GS

FEATURES

(A) Qg (Typ)

D

- 1.5

- 1.4

2.9

- 1.2

SOT-363

SC-70 (6-LEADS)

D

1

D

2

G

3

Top View

Ordering Information: Si1403BDL-T1-E3 (Lead (Pb)-free)

D

6

5

D

S

4

• TrenchFET® Power MOSFET

Marking Code

OD XX

YY

Lot Traceability
and Date Code

Part # Code

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

a

Pulsed Drain Current

Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

a

a

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 85 °C

A

TA = 25 °C

T

= 85 °C

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 1.5 - 1.4

- 1.2 - 1.0

- 0.8 - 0.8

0.625 0.568

0.400 0.295

- 20

± 12

- 5

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

Steady State 180 220

Maximum Junction-to-Foot (Drain) Steady State

Notes:
a. Surface Mounted on 1" x 1" FR4 Board.

Document Number: 73253
S-71951-Rev. B, 10-Sep-07

R

thJA

R

thJF

165 200

°C/W

105 130

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1

New Product

Si1403BDL

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

Source-Drain Reverse Recovery Time

Body Diode Reverse Recovery Charge

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

a

r

DS(on)

g

fs

V

SD

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

Q

rr

V

V

DS

I

D

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 12 V

V

= - 20 V, V

DS

= - 20 V, V

DS

= - 5 V, V

DS

V

= - 4.5 V, ID = - 1.5 A

GS

V

= - 3.6 V, ID = - 1.4 A

GS

V

= - 2.5 V, ID = - 0.8 A

GS

GS

= 0 V

GS

= 0 V, TJ = 85 °C

= - 4.5 V

GS

VDS = - 10 V, ID = - 1.5 A

IS = - 0.8 A, V

= - 10 V, V

GS

= 0 V

GS

= - 4.5 V, ID = - 1.5 A

f = 1.0 MHz 9 Ω

V

= - 10 V, RL = 10 Ω

DD

≅ - 1 A, V

= - 4.5 V, Rg = 6 Ω

GEN

IF = - 0.8 A, di/dt = 100 A/µs

- 0.6 - 1.3 V

± 100 nA

- 1

- 5

- 2 A

0.120 0.150

0.140 0.175

0.220 0.265

3.4 S

- 0.8 - 1.1 V

29 4.5

0.65

1.0

13 20

30 45

28 42

13 20

12 25

48nC

µA

Ω

nCGate-Source Charge

ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

4.0

3.2

2.4

1.6

- Drain Current (A)I

D

0.8

0.0

0.0 0.8 1.6 2.4 3.2 4.0

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2

VGS = 5 thru 2.5 V

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

2 V

1.5 V

1, 0.5 V

4.0

TC = - 55 °C

3.2

2.4

1.6

- Drain Current (A)I

D

0.8

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

- Gate-to-Source Voltage (V)

V

GS

25 °C

Transfer Characteristics

Document Number: 73253

S-71951-Rev. B, 10-Sep-07

125 °C

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.40

Si1403BDL

Vishay Siliconix

500

0.32

VGS = 2.5 V

0.24

- On-Resistance (Ω)r

0.16

DS(on)

0.08

0.00
01234

On-Resistance vs. Drain Current

5

VDS = 10 V
I

= 1.5 A

D

4

3

2

- Gate-to-Source Voltage (V)

GS

V

1

ID - Drain Current (A)

VGS = 3.6 V

VGS = 4.5 V

400

300

200

C - Capacitance (pF)

100

0

048121620

1.6

1.4

1.2

1.0

- On-Resistance
(Normalized)

DS(on)

r

0.8

C

iss

C

oss

C

rss

VDS - Drain-to-Source Voltage (V)

Capacitance

VGS = 4.5 V
I

= 1.5 A

D

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

10

1

- Source Current (A)I

S

0.1

0.0 0.3 0.6 0.9 1.2 1.5

Source-Drain Diode Forward Voltage

Document Number: 73253
S-71951-Rev. B, 10-Sep-07

Qg - Total Gate Charge (nC)

Gate Charge

TJ = 150 °C

V

- Source-to-Drain Voltage (V)

SD

TJ = 25 °C

0.6

- 50 - 25 0 25 50 75 100 125 150

T

- Junction Temperature (°C)

J

On-Resistance vs. Junction Temperature

0.40

0.35

0.30

0.25

0.20

- On-Resistance (Ω)r

0.15

0.10

DS(on)

0.05

0.00
012345

ID = 0.8 A

VGS - Gate-to-Source Voltage (V)

ID = 1.5 A

On-Resistance vs. Gate-to-Source Voltage

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New Product

Si1403BDL

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0.5

0.4

0.3

ID = 250 µA

10

8

0.2

0.1

Variance (V)V

0.0

GS(th)

- 0.1

- 0.2

- 0.3

- 50 - 25 0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

10

0.1

- Drain Current (A)I

D

0.01

Limited by

r

DS(on)*

1

TA = 25 °C

Single Pulse

Power (W)

6

4

2

0

-2

10

-1

1 1001010

Time (s)

Single Pulse Power, Junction-to-Ambient

10 µs
100 µs

1 ms

10 ms

100 ms

1 s, 100 s, DC

Thermal Impedance

Normalized Effective Transient

0.01

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4

0.1

2

1

-4

10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.001

0.1 1 10 100

- Drain-to-Source Voltage (V)

V

DS

>

minimum VGS at which r

* V

GS

DS(on)

is specified

Safe Operating Area

Notes:

P

DM

t

1

t

2

t

thJA

t

thJA

100

1

2

= 180 °C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

- TA = PDMZ

3. T

JM

4. Surface Mounted

-3

10

-2

10

-1

1 10 60010

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Document Number: 73253

S-71951-Rev. B, 10-Sep-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

Thermal Impedance

Normalized Effective Transient

0.05

0.02

Si1403BDL

Vishay Siliconix

0.01

Single Pulse

-4

10

-3

10

-2

10

Square Wave Pulse Duration (s)

-1

11010

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73253.

Document Number: 73253

www.vishay.com

S-71951-Rev. B, 10-Sep-07

5

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1