Page 1
Philips Semiconductors Product specification
NE/SA/SE532/
LM158/258/358/A/2904
Low power dual operational amplifiers
1
1995 Nov 27 853-1241 16050
DESCRIPTION
The 532/358/LM2904 consists of two independent, high gain,
internally frequency-compensated operational amplifiers internally
frequency-compensated operational amplifiers designed specifically
to operate from a single power supply over a wide range of voltages.
Operation from dual power supplies is also possible, and the low
power supply current drain is independent of the magnitude of the
power supply voltage.
UNIQUE FEATURES
In the linear mode the input common-mode voltage range includes
ground and the output voltage can also swing to includes ground
and the output voltage can also swing to ground, even though
operated from only a single power supply voltage. The unity gain
cross frequency is temperature-compensated. The input bias current
is also temperature-compensated.
FEATURES
•Internally frequency-compensated for unity gain
•Large DC voltage gain—100dB
•Wide bandwidth (unity gain)—1MHz (temperature-compensated)
PIN CONFIGURATIONS
1
2
3
4 5
6
7
8
– +
+
–
A B
V+
OUTPUT B
INVERTING INPUT B
NON INVERTING INPUT B
OUTPUT A
INVERTING INPUT A
NON INVERTING INPUT A
V–
D, FE, N Packages
SL00282
Figure 1. Pin Configuration
•Wide power supply range single supply—3V
DC
to 30VDC or dual
supplies—±1.5V
DC
to ±15V
DC
•Very low supply current drain (400µA)—essentially independent of
supply voltage (1mW/op amp at +5V
DC
)
•Low input biasing current—45nA
DC
temperature-compensated
•Low input offset voltage—2mV
DC
and offset current—5nA
DC
•Differential input voltage range equal to the power supply voltage
•Large output voltage—0V
DC
to V+ 1.5VDC swing
EQUIVALENT CIRCUIT
v
+
6
µ
A
100µ
A
Q2 Q3
Q1 Q4
INPUTS
+
Q8 Q9
C
C
Q10
6µ
A
Q5
Q7
Q6
R
SC
OUTPUT
Q13
Q12
Q11
50µA
SL00283
Figure 2. Equivalent Circuit
Page 2
Philips Semiconductors Product specification
NE/SA/SE532/
LM158/258/358/A/2904
Low power dual operational amplifiers
1995 Nov 27
2
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Small Outline (SO) Package 0 to +70°C NE532D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE532N SOT97-1
8-Pin Plastic Small Outline (SO) Package -40°C to +85°C SA532D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) -40°C to +85°C SA532N SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP) -40°C to +85°C SA532FE 0580A
8-Pin Plastic Small Outline (SO) Package -40°C to +125°C LM2904D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) -40°C to +125°C LM2904N SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP) -55°C to +125°C LM158FE 0580A
8-Pin Plastic Dual In-Line Package (DIP) -25°C to +125°C LM258N SOT97-1
8-Pin Plastic Small Outline (SO) Package -25°C to +125°C LM258D SOT96-1
8-Pin Plastic Small Outline (SO) Package 0 to +70°C LM358D SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C LM358N SOT97-1
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C LM358AN SOT97-1
8-Pin Plastic Small Outline (SO) Package 0 to +70°C LM358AD SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) -55°C to +125°C SE532N SOT97-1
8-Pin Ceramic Dual In-Line Package (CERDIP) -55°C to +125°C SE532FE 0580A
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNIT
V
S
Supply voltage, V+ 32 or ±16 V
DC
Differential input voltage 32 V
DC
V
IN
Input voltage -0.3 to +32 V
DC
P
D
Maximum power dissipation
T
A
=25°C (Still air)
1
FE package
N package
D package
780
1160
780
mW
mW
mW
Output short-circuit to GND
5
V+<15 VDC and TA=25°C Continuous
Operating ambient temperature range
NE532/LM358/LM358A 0 to +70 °C
T
A
LM258 -25 to +85 °C
LM2904 -40 to +125 °C
SA532 -40 to +85 °C
SE532/LM158 -55 to +125 °C
T
STG
Storage temperature range -65 to +150 °C
T
SOLD
Lead soldering temperature (10sec max) 300 °C
NOTES:
1. Derate above 25°C, at the following rates:
FE package at 6.2mW/°C
N package at 9.3mW/°C
D package at 6.2mW/°C
Page 3
Philips Semiconductors Product specification
NE/SA/SE532/
LM158/258/358/A/2904
Low power dual operational amplifiers
1995 Nov 27
3
DC ELECTRICAL CHARACTERISTICS
T
A
= 25°C, V+=+5V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE532, LM158/258
NE/SA532/
LM358/LM2904
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max Min Typ Max
UNIT
V
OS
Offset voltage
1
RS=0Ω
R
S
=0Ω, over temp.
±2 ±5
±7
±2 ±7
±9
mV
mV
V
OS
Drift RS=0Ω, over temp. 7 7 µV/°C
I
OS
Offset current
IIN(+)-IIN(-)
Over temp.
±3 ±30
±100
±5 ±50
±150
nA
nA
I
OS
Drift Over temp. 10 10 pA/°C
I
BIAS
Input current
2
IIN(+) or IIN(-)
Over temp., I
IN
(+) or IIN(-)
45
40
150
300
45
40
250
500
nA
nA
I
B
Drift Over temp. 50 50 pA/°C
V
CM
Common-mode voltage V+=30V 0 V+-1.5 0 V+-1.5 V
range
3
Over temp., V+=30V 0 V+-2.0 0 V+-2.0 V
CMRR
Common-mode rejection
ratio
V+=30V 70 85 65 70 dB
V
OH
Output voltage swing
RL≥2kΩ, V+=30V,
over temp.
26 26 V
RL≥10kΩ, V+=30V,
over temp.
27 28 27 28 V
V
OL
Output voltage swing RL≥10kΩ, over temp. 5 20 5 20 mV
I
CC
Supply current
RL=∞, V+=30V
R
L
=∞ on all amplifiers,
over temp., V+ =30V
0.5
0.6
1.0
1.2
0.5
0.6
1.0
1.2
mA
mA
A
VOL
Large-signal voltage gain
RL≥2kΩ, V
OUT
±10V,
V+=15V
(for large V
O
swing)
over temp.
50
25
100 25
15
100 V/mV
V/mV
PSRR
Supply voltage rejection
ratio
RS=0Ω 65 100 65 100 dB
Amplifier-to-amplifier coupling
4
f=1kHz to 20kHz
(input referred)
-120 -120 dB
I
OUT
Output current
Source
V
IN+
=+1VDC, V
IN-
=0VDC,
V+=15V
DC
20 40 20 40 mA
V
IN+
=+1VDC, V
IN-
=0VDC,
V+=15V
DC
, over temp.
10 20 10 20 mA
Sink
V
IN-
=+1VDC, V
IN+
=0VDC,
V+=15V
DC
10 20 10 20 mA
V
IN-
=+1VDC, V
IN+
=0VDC,
V+=15V
DC
, over temp.
5 8 5 8 mA
V
IN+
=0V, V
IN-
=+1VDC,
V
O
=200mV
12 50 12 50 µA
I
SC
Short circuit current
5
40 60 40 60 mA
Differential input voltage
6
V+ V+ V
GBW Unity gain bandwidth TA=25°C 1 1 MHz
SR Slew rate TA=25°C 0.3 0.3 V/µs
V
NOISE
Input noise voltage TA=25°C, f=1kHz 40 40 nV/√Hz
Page 4
Philips Semiconductors Product specification
NE/SA/SE532/
LM158/258/358/A/2904
Low power dual operational amplifiers
1995 Nov 27
4
DC ELECTRICAL CHARACTERISTICS T
A
=25°C, V+=+5V, unless otherwise specified.
LM358A
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max
UNIT
V
OS
Offset voltage
1
RS=0Ω
R
S
=0Ω, over temp.
±2 ±3
±5
mV
mV
V
OS
Drift RS=0Ω, over temp. 7 20 µV/°C
I
OS
Offset current
IIN(+)-IIN(-)
Over temp.
5 ±30
±75
nA
nA
I
OS
Drift Over temp. 10 300 pA/°C
I
BIAS
Input current
2
IIN(+) or IIN(-)
Over temp., I
IN
(+) or IIN(-)
45
40
100
200
nA
nA
I
B
Drift Over temp. 50 pA/°C
V
CM
Common-mode voltage V+=30V 0 V+-1.5 V
range
3
Over temp., V+=30V 0 V+-2.0 V
CMRR Common-mode rejection ratio V+=30V 65 85 dB
V
OH
Output voltage swing
RL≥2kΩ, V+=30V,
over temp.
26 V
RL≥10kΩ, V+=30V,
over temp.
27 28 V
V
OL
Output voltage swing RL≥10kΩ, over temp. 5 20 mV
I
CC
Supply current
RL=∞, V+=30V
R
L
=∞ on all amplifiers,
over temp., V+ =30V
0.5
0.6
1.0
1.2
mA
mA
A
VOL
Large-signal voltage gain
RL≥2kΩ, V
OUT
±10V,
V+=15V
(for large V
O
swing)
over temp.
25
15
100 V/mV
V/mV
PSRR Supply voltage rejection ratio RS=0Ω 65 100 dB
Amplifier-to-amplifier coupling
4
f=1kHz to 20kHz (input referred) -120 dB
I
OUT
Output current
Source
V
IN+
=+1VDC, V
IN-
=0VDC,
V+=15V
DC
20 40 mA
V
IN+
=+1VDC, V
IN-
=0VDC,
V+=15V
DC
, over temp.
10 20 mA
Sink
V
IN-
=+1VDC, V
IN+
=0VDC,
V+=15V
DC
10 20 mA
V
IN-
=+1VDC, V
IN+
=0VDC,
V+=15V
DC
, over temp.
5 8 mA
V
IN+
=0V, V
IN-
=+1VDC,
V
O
=200mV
12 50 µA
I
SC
Short circuit current
5
40 60 mA
Differential input voltage
6
V+ V
GBW Unity gain bandwidth TA=25°C 1 MHz
SR Slew rate TA=25°C 0.3 V/µs
V
NOISE
Input noise voltage TA=25°C, f=1kHz 40 nV/√Hz
NOTES:
1. V
O
≈ 1.4V, RS=0Ω with V+ from 5V to 30V; and over the full input common-mode range (0V to V+ -1.5V).
2. The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of
the output so no loading change exists on the input lines.
3. The input common-mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3V . The upper end of the
common-mode voltage range is V+ -1.5V , but either or both inputs can go to +32V without damage.
4. Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts. This
typically can be detected as this type of capacitance coupling increases at higher frequencies.
5. Short-circuits from the output to V+ can cause excessive heating and eventual destruction. The maximum output current is approximately
40mA independent of the magnitude of V+. At values of supply voltage in excess of +15V
DC
, continuous short-circuits can exceed the power
dissipation ratings and cause eventual destruction.
6. The input common-mode voltage or either input signal voltage should not be allowed to go negative by more than 0.3V . The upper end of the
common-mode voltage range is V+ -1.5V , but either or both inputs can go to +32V
DC
without damage.
Page 5
Philips Semiconductors Product specification
NE/SA/SE532/
LM158/258/358/A/2904
Low power dual operational amplifiers
1995 Nov 27
5
TYPICAL PERFORMANCE CHARACTERISTICS
V – OUTPUT VOLTAGE (V )
O
–
+
V
DC
100K
V
O
1K
+
7
V
DC
V
IN
2K
TA = 0oC to +125oC
TA = 55oC
4
3
2
1
0
0
10
20 30 40
SUPPLY VOLTAGE (V
DC
)
SUPPLY CURRENT DRAIN (mA )
DC
90
80
70
60
50
40
30
20
10
0
55 35 –15 5 25 45 65 85 105 125
TEMPERATURE (oC)
OUTPUT CURRENT (mA )
DC
160
120
80
40
0
0 10 20 30 40
SUPPLY VOLTAGE (V
DC
)
RL + 20 kΩ
RL + 2 kΩ
A — VOLTAGE GAIN (dB)
VOL
–
+
V
+
10M
V
O
0.1µf
V
+
/2
V
IN
V+ = 30 VDC AND
–55oC < TA < +125oC
V+ = 10 to 15 VDC AND
–55oC < TA < +125oC
140
120
100
80
60
40
20
0
1 10 100 1K 10K 100K 1M 10M
FREQUENCY (Hz)
VOLTAGE GAIN (dB)
20
15
10
5
0
1K 10K 100K 1M
FREQUENCY (Hz)
V — OUTPUT SWING (V )
O
p–p
RL < 2K V
+
15 V
DC
4
3
2
1
0
3
2
1
0
0 10 20 30 40
TIME (µS)
OUTPUT VOLTAGE (V)
INPOUT VOLTAGE (V)
E
O
50pF
INPUT
OUTPUT
θIN
500
450
400
350
300
250
0 1 2 3 4 5 6 7 8
t — TIME (µS)
TA = +25oC
V
+ = +30 V
DC
E – OUTPUT VOLTAGE (mV)
O
+V
+
/2
V+
V
2
I
O
INDEPENDENT OF V+
T
A
= +25oC
8
7
6
5
4
3
2
1
0.001 0.01 0.1 1 10 100
I
O
+
– OUTPUT SOURCE CURRENT (mADC)
V – OUTPUT VOLTAGE
REFERENCE TO V+ (VD )
DC
∆
V
+
/2
V
+
I
O
TA = +25oC
V+ = +5 V
DC
V+ = +15 V
DC
V+ = +30 V
DC
10
1
0.1
0.01
0.001 0.01 0.1 1 10 100
I
O
– OUTPUT SINK CURRENT (mADC)
DC
V
O
–
+
+
–
Supply Current Current Limiting Voltage Gain
Open–Loop Frequency
Response
Large–Signal Frequency
Response
Voltage–Follower
Response
Voltage–Follower Pulse
Response (Small–Signal)
Output Characteristics
Current Sourcing
Output Characteristics
Current Sinking
SL00284
Figure 3. Typical Performance Characteristics
Page 6
Philips Semiconductors Product specification
NE/SA/SE532/
LM158/258/358/A/2904
Low power dual operational amplifiers
1995 Nov 27
6
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
+V — INPUT VOLTAGE ( V )
15
10
5
NEGATIVE
POSITIVE
0 5 10 15
V+ OR V– — POWER SUPPLY VOLTAGE (+ VDC)
IN DC
+
VCM = 0 V
DC
V+ = +30 V
DC
V+ = +15 V
DC
V+ = +5 V
DC
90
80
70
60
50
40
30
20
10
0
–55 –35 –15 5 25 45 65 85 105 125
T
A
— TEMPERATURE (Co)
I – INPUT CURRENT (nA )
B DC
100
100
100k
7.5 V
DC
V
O
100k
–
+
+
V
IN
+7.5 V
DC
120
100
80
60
40
20
0
100
1k 10k 100k
1M
f — FREQUENCY (Hz)
CMRR — COMMON–MODE REJECTION RATIO (dB)
Input Voltage Range Input Current Common–Mode Rejection Ratio
SL00285
Figure 4. Typical Performance Characteristics (cont.)
TYPICAL APPLICATIONS
V+
2
Non-Inverting Amplifier
RF
V+
8
RL
V
O
R
IN
V+
2
V
I
N
–
+
4
V+
8
V
O
VI
N
–
+
4
V+
10K
10k
V+
8
V
O
VI
N
–
+
4
V+
10K
10k
RF
BLOCKS
DC.
GAIN
R
1
Single Supply Inverting Amplifier
Input Biasing Voltage Follower
SL00286
Figure 5. Typical Applications
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