Datasheet SAA1504T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

SAA1504T

Safety IC

Objective specification
File under Integrated Circuits, IC17

2000 Mar 07

Philips Semiconductors Objective specification

Safety IC SAA1504T

FEATURES

• Zero voltage start-up

• Discharge and charge overcurrent protection

• Automatic release of current protection at removal of

charger or load

• Low current consumption in normal operating mode

• Very low current consumption when battery voltage is

lower than 2.3 V

• Accurate voltage detection levels

• Continuous monitoring of batteryvoltage and charge or

discharge current

• External power FETs are driven with an elevated supply
voltage, reducing the on-resistance

• Able to accommodate 20 V charge voltage

• Read out of charge (disable) status

• Small package (SO8)

• Low external components count

• Temperature protection

• Charger reverse connection protection.

GENERAL DESCRIPTION

The SAA1504T is manufactured in a BCD Power Logic 70
process and is intended to be used as a protection circuit
forsingle cell Li-ion batterypacks. The current and voltage
ratings are especially designed for use in battery packs for
portable telephones such as GSM.

The circuit continuously monitors the battery voltage,
current and junction temperature and will disconnect the
battery in case of an overload situation:

• Overdischarge protection prevents deep discharge of
the cell; deep discharge of a Li-ion cell degrades the life
cycle

• Overcharge protection for safety reasons

• Overcurrent protection on charge or discharge current

rate

• Temperature protection for preventing charge or
discharge at high temperatures

• Short circuit protection.

It must be stated that this is a safety IC to be integrated
inside a battery pack. It is not primarily intended as an end
of charge provision.

ORDERING INFORMATION

TYPE

NUMBER

SAA1504T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

NAME DESCRIPTION VERSION

PACKAGE

2000 Mar 07 2

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2000 Mar 07 3

handbook, full pagewidth

CEXT

BLOCK DIAGRAM

Philips Semiconductors Objective specification

Safety IC SAA1504T

LOGIC

7

ESD

reset
disable
mode

CHARGE

SHIFTER

−185 mV

V

CC

PUMP

LEVEL

CURRENT

PROTECTION

V

ref

V

cp

SAA1504T

K2 × V

ptat

ESD

ESD

2

DO

3

CO

5

ST

ESD

CC

SS

8

ESD 6.8 V

6

1

4

V

n.c.

V

VM

LEVEL

SHIFTER

K1 × V

ptat

4.18 V

ESD

2.3 V

3.95 V

V

ref

set
disable
mode

175 mV

Fig.1 Block diagram.

MGS969

Philips Semiconductors Objective specification

Safety IC SAA1504T

PINNING FUNCTIONAL DESCRIPTION

SYMBOL PIN DESCRIPTION

V

SS

1 ground supply
DO 2 output to gate of discharge power FET
CO 3 output to gate of charge power FET
VM 4 negative sense input
ST 5 status output
n.c. 6 not connected
CEXT 7 connection for external delay capacitor
V

CC

handbook, halfpage

8 positive battery sense input

V

1

SS

2

SAA1504T

3

CO

4

VM

MGS970

V

8

CC

CEXTDO

7

n.c.

6

ST

5

Fig.2 Pin configuration.

The basic function of the SAA1504T is to protect a single
Li-ion cell against overcharge and overdischarge for
reasons of life time and safety. The voltage across the cell
terminals (V

) is monitored continuously and compared

bat

to an accurate internal reference voltage.
The circuit diagram (see Fig.3) of a Li-ion battery pack

shows the SAA1504T and 2 power NMOS transistors
which are connected in anti series. Both transistors must
have their backgate connected to their source, resulting in
2 backgate diodes in anti series.

The timing diagram (see Fig.6) shows the detection levels
for the various modes of operation.

Battery voltage between 2.6 and 4.18 V

The safety IC is in the normal operating mode for
V

= 2.6 to 4.18 V, a charge or discharge current below

bat

the current-protection level and a junction temperature
below the temperature protection activation level. In this
mode transistors SW1 and SW2 are driven with an
elevated supply voltage (with a charge pump) which
guarantees a low on-resistance in the main current path.
This is important for fully utilizing the high energy density
of the Li-ion battery technology.

handbook, full pagewidth

+ charger/load

− charger/load

V

bat

R1

1 kΩ

SW2

SW1

Fig.3 Safety IC connection diagram.

2000 Mar 07 4

C1

0.47 µF

C2

CEXT

V

SS

DO

CO

7

1

2

SAA1504T

3

V

CC

8

ST

5

4

VM

MGS971

Philips Semiconductors Objective specification

Safety IC SAA1504T

Battery voltage below 2.3 V

When V

< 2.3 V the safety IC is in the Power-down

bat

mode: SW2 is open to block a further discharge.
The battery voltage will increase stepwise, because of the

sudden disconnection of the load. The safety IC will not
re-enter the normal operating mode at this event unless
the battery voltage exceeds the power-down release level
of 2.6 V and a charge current is present. So when no
charger is present in the Power-down mode, the safety IC
stays in this mode, independent of the battery voltage.

ConnectingachargerinthePower-downmodeisdetected
by a negative voltage on pin VM. Because the voltage at
pin VM is defined by a charge current via the backgate
diode of SW2, a charge current of a few nAs is already
detected. When a charge current is detected and
V

> 2.6 V, the system will go from the Power-down

bat

mode to the normal operating mode.
In the Power-down mode the supply current is reduced to

150 nA (typical value) for minimizing the discharge of the
battery by the safety IC. This is achieved by disabling all
analog circuitry, except the circuitry for detecting the
presence of a charger and for detecting V

bat

> 2.6 V.
Because the charge pump is disabled and battery
charging should be possible, SW1 is switched on with a
reduced Vgs voltage.

Zero voltage start-up

The safety IC has to be able to charge the battery at 0 V.
This means that when connecting a charger in case of a
completely empty battery, SW1 has to be open.

In the Power-down mode output CO is connected via a
diode to VCC, so that the charge transistor will be active
when VVM is negative.

Maximum charge or discharge current and temperature protection

When the maximum charge or discharge current is
exceeded or when the maximum temperature is detected
the disable mode is activated and will open both switches.
Exceeding the maximum charge or discharge current is
detected by a voltage drop or rise on pin VM when both
switches are closed.

A release of this mode can only be achieved by removing
the load (or charger) and at a junction temperature below
60 °C. The disable mode is followed by a return to its
previous mode.

Normal operating mode

In case of correct temperature, battery voltage and charge
or discharge current, the system will be in the normal
operating mode (see Fig.4).

Battery voltage above 4.18 V

When the battery is charged to V

> 4.18 V, the safety IC

bat

will enter the charge inhibit mode: SW1 is open and
charging is disabled.

Connecting a load in the charge inhibit mode is detected
by the reversal of the voltage across SW1 and will
immediately close SW1, so entering the discharge enable
mode. A short time is needed to charge the gate of SW1.
During this time the backgate diode between drain and
source of SW1 conducts.

The safety IC will remain in the discharge enable mode
unless:

• V

< 3.95 V, which results in re-entering the normal

bat

operating mode. This transition is not externally
noticeable, because both switches remain closed.

• A charger is connected, which will immediately open

SW1. As an additional safety precaution V

> 4.18 V

bat

also yields the same reaction, because otherwise a
smallcurrentof a charger may be undetected, leading to
overcharging the Li-ion cell.

Both the charge and discharge outputs will be HIGH
(CO = 1 and DO = 1), so both switches are closed.

Power-down mode

When V

< 2.3 V the safety IC will enter the Power-down

bat

mode(seeFig.4).Thepower-down detection level of 2.3 V
hasadelay of 5 ms (typical value). The Power-down mode
will also be entered without delay when V

bat

< 1.9 V.

In this mode only charging of the battery is allowed
(CO = 1 and DO = 0).

The safety IC will return to the normal operating mode as
soon as V

> 2.6 V and a charge current is detected at

bat

the same time.

2000 Mar 07 5

Philips Semiconductors Objective specification

Safety IC SAA1504T

Charge inhibit mode

When V

> 4.18 V, the charge inhibit mode will be

bat

entered (see Fig.4). At this mode the battery can only be
discharged (CO = 0 and DO = 1).

The excess charge delay can be set by means of an
external capacitor. The delay is then defined as:
t

ed(det)

When V

=30×C

< 3.95 V, the safety IC will return from the

bat

CEXT

with t

in ms and C

ed(det)

CEXT

in nF.

charge inhibit mode to the normal operating mode.
The charge inhibit mode will also be entered as soon as a

charge current is detected in the discharge enable mode

Discharge enable mode

When the safety IC is in the charge inhibit mode, charging
of the battery is disabled because SW1 is open. Initially
discharge of the battery will then occur via the backgate
diodeofSW1.Theloadvoltagewillbeapproximately0.6 V
lower and dissipation of the backgate diode of SW1 will
occur. It is preferable to close both switches at that time
without allowing charging of the battery until V

< 3.95 V.

bat

If a discharge current is detected in the charge inhibit
mode,the system will activate the discharge enablemode,
closing both switches.

From the discharge enable mode the charge inhibit mode
will be entered again as soon as a charge current is
detected or V

> 4.18 V. The detection of a higher

bat

voltage than 4.18 V is necessary. If the battery is charged
with a very low charge current, the safety IC will not switch
from the discharge enable mode to the charge inhibit
mode.Eventually,thesafety ICwill enter the charge inhibit
mode if the battery is overcharged to V

> 4.18 V

bat

because of a small charge current.
When V

< 3.95 V the safety IC will return from the

bat

discharge enable to the normal operating mode.
If the safety IC is in the charge inhibit mode, it will usually

go to the normal operating mode via the discharge enable
mode. But if the system is in the charge inhibit mode and
the battery pack is stored for several years, the battery
voltage can drop because of the battery discharge by the
safety IC and the self discharge of the battery. So a
voltage drop of the battery is possible, without detecting a
discharge current. Because of this, the normal operating
mode should also be entered from the chargeinhibit mode
whenV

< 3.95 Vandnotonlyfromthedischarge enable

bat

mode. In this way, charging a battery is always possible if
V

< 3.95 V.

bat

handbook, full pagewidth

to previous mode

(1) Minimum time in the disable mode is about 5 ms.

T > 100
or
I > I

max

disable mode

CO, DO

(1)

−185 mV < VVM < 175 mV
and

T < 60

°C

°C

discharge enable

CO, DO

V

< 3.95 V

bat

normal operating

CO, DO

V

> 2.6 V

bat
and
VVM < −185 mV

power down

CO, DO

Fig.4 Flow diagram.

VVM > 480 mV

V

> 4.18 V

bat

or

VVM < −10 mV

V

> 4.18 V

bat

from all modes

V

bat

V

< 2.3 V at 5 ms

bat

V

bat

< 1.9 V

or

charge inhibit

CO, DO

< 3.95 V

MGS973

2000 Mar 07 6

Philips Semiconductors Objective specification

Safety IC SAA1504T

Disable mode

When the charge or discharge current exceeds the
specified maximum value, the disable mode is entered.
Detection of the maximum charge or discharge current is
only activated when the outputs are HIGH (CO = 1 and
DO = 1) as explained next.

If the safety IC is in the Power-down mode and a charge
current is detected (e.g. VVM= −0.6 V) the normal
operating mode will be entered when V

bat

> 2.6 V.
Because of a minimum time in which the gate capacitors
have to be charged,VVM= −0.6 V for a smallperiod, when
the safety IC is already in the normal operating mode.
VVM= −0.6 Vcould also occur when the batteryischarged
with a current exceeding the maximum charge current.
To prevent that a maximum charge current is detected
when coming from the Power-down mode a delay is
included to ensure charging of both outputs CO and DO.
So entering of the disable mode is enabled when both
outputs CO and DO are fully charged or after a certain
delay. The delay is necessary to activate the current
protection even in case the outputs CO or DO can not be
fully charged.

The same applies for entering the disable mode when the
safety IC is in the discharge enable mode.

The delay of the current protection as a function of the
sense voltage VVM (for charge and discharge) is given in
Fig.5.

The disable mode is also entered when the junction
temperature exceeds 100 °C. When the temperature
dropsbelow60 °Cand at the absence of a charger or load,
the safety IC will return to its previous mode.

Status output

The status of the safety IC is available on pin ST.

Table 1 Functional table of the status output

MODE OUTPUT PIN ST

Normal operating LOW
Charge inhibit HIGH
Discharge enable LOW
Power-down LOW
Disable HIGH (note 1)

Note

1. Only when a charger is connected.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages measured with respect to pin VSS.

SYMBOL PARAMETER CONDITION MIN. MAX. UNIT

V

CC

V

CC(clamp)

I

CC(clamp)

V

rev

V

VM

V

ST

T

amb

T

stg

positive battery sense input voltage DC constant −0.3 +4.5 V
clamping voltage I

CC(clamp)

= 7 mA; t < 60 ms − 8.5 V
clamping current − 7mA
reverse charger voltage V

= −(VCC− VVM);

rev

VVMpositive with respect to V

− 20 V

CC

negative sense input voltage VCC− 20 VCC+20 V
voltage on pin ST V

VM

V

CC

V
ambient temperature −25 +80 °C
storage temperature −55 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air 160 K/W

QUALITY SPECIFICATION

In accordance with

“SNW-FQ-611-D”

and JEDEC class III.

2000 Mar 07 7

Philips Semiconductors Objective specification

Safety IC SAA1504T

CHARACTERISTICS

T

=25°C; voltages measured with respect to pin VSS; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply behaviour

V

CC

I

CC

I

q

V

− V

CC

Detection levels of V

V

ec(det)

t

ec(det)

V

ec(rel)

V

pd(rel)

V

pd(det)

t

pd(det)

V

pd(min)

Detection levels on pin VM

V

dch(det)

V

ch(det)

V

ch(pres)

V

l(pres)

I

VM

Outputs on pins CO and DO

V

OH

Temperature protection

T

prot(start)

T

prot(rel)

Current protection; see Fig.5; note 2
V

prot(min)

t

d

positive battery sense input voltage 0 − 4.5 V
supply current VCC= 4.0 V; VVM= 0 V 7.0 9.0 11 µA
quiescent supply current Power-down mode

V

= 2.0 V 75 150 300 nA

CC

V

= 1.5 V 35 75 150 nA

CC

minimum charge voltage at zero charge current; VCC= 0 V 1.8 2.4 3.0 V

VM

; note 1

bat

excess charge detection voltage Tj=25°C 4.155 4.18 4.205 V

T

= −10 to +60 °C 4.150 4.18 4.210 V

j

excess charge detection voltage

C

=33nF±10% 0.4 1 2 s

CEXT

delay
excess charge release voltage 3.87 3.95 4.03 V
power-down release voltage 2.35 2.6 2.85 V
power-down detection voltage 2.25 2.3 2.35 V
power-down detection voltage delay 1 5 17 ms
power-down minimum voltage 1.6 1.9 2.2 V

discharge detection voltage charge inhibit mode 450 480 510 mV
charge detection voltage discharge enable mode −5 −10 −20 mV
charger present voltage Power-down or disable mode −120 −185 −250 mV
load present voltage disable mode 145 175 205 mV
current at pin VM VCC− VVM= 15 V; VCC= 4.33 V 1 2 3 µA

HIGH-level output voltage VCC= 2.4 V; RL= ∞ 4.4 4.6 4.8 V

V

= 4.0 V; RL= ∞ 6.4 7 7.6 V

CC

start of temperature protection disable mode 90 100 110 °C
release of temperature protection 50 60 70 °C

minimum current-protection voltage DC level on pin VM 150 250 350 mV
delay minimum value 100 200 400 µs

= 510 mV 2 4 8 ms

at V

VM

2000 Mar 07 8

Philips Semiconductors Objective specification

Safety IC SAA1504T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Status output on pin ST

I

O

Notes

1. The voltages are measured at the terminals of the battery. This voltage equals the voltage across series resistor
R1 = 1 kΩ plus the voltage on pin VCC (see Fig.3).

2. For both charge and discharge state.

output current pin ST = HIGH; see Table 1;

VST=VVM+ 0.5 V

− VVM= 20 V 13 17 21 µA

V

CC

V

− VVM= 4 V 9 12 15 µA

CC

10

handbook, halfpage

t

d

(s)

1

−1

10

−2

10

−3

10

−4

10

−1 −0.5 0 1

charge discharge

0.5
VVM (V)

Fig.5 Current-protection delay.

MGS972

2000 Mar 07 9

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2000 Mar 07 10

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TIMING DIAGRAM

Philips Semiconductors Objective specification

Safety IC SAA1504T

+V

−V

V

SW1

SW2

VM

V

diode

diode

bat

4.18

3.95

2.6

2.3

bat

discharge enable

normal operating

power-down

t

ec(det)

on
off

on
off

0

discharge enable

charge inhibit

charge inhibit

normal operating

t

ed(det)

power-down

normal operating

disable mode

t

d

normal operating

t

ec(det)

discharge enable

charge inhibit

discharge enable

disable mode

t

d

normal operating

− V

V

charger

bat

charger present

charger present

load present

no charger; no load

no charger; no load

no charger; no load

load present

no charger; no load

charger present

charger present

I

ch

> I

max

no charger; no load

charger present

load present

I

load present

no charger; no load

dch

> I

max

no charger; no load

load present

MGS974

Fig.6 Timing diagram.

Philips Semiconductors Objective specification

Safety IC SAA1504T

PACKAGE OUTLINE

SO8: plastic small outline package; 8 leads; body width 3.9 mm

SOT96-1

y

Z

8

pin 1 index

1

D

c

5

A

2

A

1

4

e

w M

b

p

E

H

E

detail X

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE
VERSION

SOT96-1

A

A1A2A3b

max.

0.25

1.75

0.10

0.010

0.069

0.004

p

1.45

1.25

0.057

0.049

IEC JEDEC EIAJ

076E03 MS-012

0.25

0.01

0.49

0.36

0.019

0.014

0.25

0.19

0.0100

0.0075

UNIT

inches

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

(1)E(2)

cD

5.0

4.8

0.20

0.19

REFERENCES

4.0

3.8

0.16

0.15

1.27

0.050

2000 Mar 07 11

eHELLpQZywv θ

1.05

1.0

0.4

0.039

0.016

0.7

0.6

0.028

0.024

0.25 0.10.25

0.010.010.041 0.004

EUROPEAN

PROJECTION

6.2

5.8

0.244

0.228

(1)

0.7

0.3

0.028

0.012

ISSUE DATE

97-05-22
99-12-27

o

8

o

0

Philips Semiconductors Objective specification

Safety IC SAA1504T

SOLDERING
Introduction to soldering surface mount packages

Thistextgivesavery brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering is not alwayssuitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit board by screen printing, stencillingor
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended
forsurfacemountdevices(SMDs)orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswithleadsonfoursides,thefootprintmust
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

2000 Mar 07 12

Philips Semiconductors Objective specification

Safety IC SAA1504T

Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

WAVE REFLOW

(1)

BGA, LFBGA, SQFP, TFBGA not suitable suitable

SOLDERING METHOD

HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS not suitable

(3)

PLCC

, SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

(2)

(3)(4)
(5)

suitable

suitable
suitable

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

2000 Mar 07 13

Philips Semiconductors Objective specification

Safety IC SAA1504T

NOTES

2000 Mar 07 14

Philips Semiconductors Objective specification

Safety IC SAA1504T

NOTES

2000 Mar 07 15

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]

Hungary: seeAustria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PTPhilipsDevelopment Corporation,Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2000

Internet: http://www.semiconductors.philips.com

69

Printed in The Netherlands 403506/25/01/pp16 Date of release: 2000 Mar 07 Document order number: 9397 750 06537