Datasheet SA631DK Datasheet (Philips)

INTEGRATED CIRCUITS

SA631

1GHz low voltage LNA and mixer

Product specification
IC17 Data Handbook




1998 Jan 08

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

DESCRIPTION

The SA631 is a combined low-noise BiCMOS amplifier, and mixer
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than ±0.2dB over –40 to +85°C temperature range. The
wide-dynamic-range mixer has a 10dB noise figure and IP3 of
+3.3dBm at the input at 881MHz. The nominal current drawn from a
single 3V supply is 8.3mA. Additionally, the entire circuit can be
powered down to further reduce the supply current to less than
20µA.

FEATURES

•Low current consumption

•Outstanding gain and noise figure

•Excellent gain stability versus temperature and supply voltage

•LNA and mixer power down capability

•Designed in Philips state of the art BiCMOS QUBIC process

APPLICATIONS

•900MHz cellular and cordless front-end

•Spread spectrum receivers

•RF data links

•UHF frequency conversion

•Portable radio

PIN CONFIGURATION

PD1
PD2

GND

LO OUT

GND
GND
GND
GND
GND
GND

10

Figure 1. Pin Configuration

1
2
3
4
5
6
7
8
9

20

MIXER OUT
MIXER OUT

19
18

GND

17

MIXER IN

16

GND
LNA IN

15

GND

14

LNA OUT

13
12

V

CC

GND

11

SR00124

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

20-Pin Shrink Small Outline Package (Surface-mount, SSOP)

BLOCK DIAGRAM

OUT

MIXER

OUT

GND

MIXER

20 19 18 17 16

PD1 PD2 GND

MIXER

IN

43215

LO GND GND

OUT

Figure 2. SA631 Block Diagram

GND

GND

–40 to +85°C

LNA

IN GND

GND

LNA

OUT

V

CC

15 14 13 12 11

LNA

761098

GND GND

GND

SA631DK SOT266-1

SR01588

1998 Jan 08 853–2045 18847

2

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA6311GHz low voltage LNA and mixer

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

V

T

P
T

CC

V

IN

P

D

JMAX

MAX

STG

Supply voltage
Voltage applied to any other pin –0.3 to (VCC + 0.3) V
Power dissipation, T

Maximum operating junction temperature 150 °C
Maximum power input/output +20 dBm
Storage temperature range –65 to +150 °C

NOTES:

1. Transients exceeding 8V on V

2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,

3. Pins 19 and 20 are ESD sensitive (mixer outputs).

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

T

V

CC

amb

T

J

Supply voltage 2.7 to 5.5 V
Operating ambient temperature range –40 to +85 °C
Operating junction temperature –40 to +105 °C

1

= 25°C (still air)

20-Pin Plastic SSOP 980 mW

θ

JA

amb

pin may damage product.

CC

: 20-Pin SSOP = 110°C/W

2

–0.3 to +6 V

DC ELECTRICAL CHARACTERISTICS

VCC = +3.0V , T

I

CC

V

T

V

IH

V

IL

I

IL

I

IH

= 25°C; unless otherwise stated.

amb

Supply current

PD logic threshold voltage 1.2 1.6 1.8 V
Logic 1 level 2.0 V
Logic 0 level –0.3 0.8 V
PD1 input current Enable = 0.4V 10 µA
PD2 input current Enable = 2.4V 10 µA

LIMITS

MIN TYP MAX

Full power-on 8.3 mA

LNA powered-down 5.2 mA

Full power-down 20 µA

CC

V

1998 Jan 08

3

Philips Semiconductors Product specification

SYMBOL

PARAMETER

TEST CONDITIONS

UNITS

SA6311GHz low voltage LNA and mixer

AC ELECTRICAL CHARACTERISTICS

VCC = +3.0V , T

Low Noise Amplifier

f

RF

S

21

S

21

∆S21/∆T Gain temperature sensitivity enabled 0.006 dB/°C

∆S21/∆f Gain frequency variation 800MHz - 1.0GHz ±0.013 dB/MHz

S

12

S

11

S

22

P

-1dB

IP3 Amplifier input third order intercept –7 dBm
NF Amplifier noise figure 1.7 dB
t

ON

t

OFF

Mixer

PG

C

S

11M

NF

M

P

-1dB

IP3

M

IP

2INT

P

RFM-IF

P

LO-IF

P

LO-RFM

P

LO-RF

Overall System

G

SYS

= 25°C; RFIN = 881MHz, f

amb

= 964MHz; unless otherwise stated.

VCO

LIMITS

–3

TYP

+3

RF input frequency range 800 1000 MHz
Amplifier gain 15 dB
Amplifier gain in power-down mode –28 dB

Amplifier reverse isolation @ 881 MHz –28 dB
Amplifier input match With ext. impedance matching –10 dB
Amplifier output match –10 dB
Amplifier input 1dB gain compression –20 dBm

Amplifier turn-on time (Enable Lo → Hi) 120 µs
Amplifier turn-off time (Enable Hi → Lo) 0.3 µs

Mixer power conversion gain: RP = RL = 1.2kΩ

fRF = 881MHz, fLO = 964MHz,

fIF = 83MHz

9.6 dB

Mixer input match Ext. impedance matching req. –10 dB
Mixer SSB noise figure 10 dB
Mixer input 1dB gain compression –14.5 dBm
Mixer input third order intercept 3.3 dBm
Mixer input second order intercept 38 dBm
Mixer RF feedthrough RFIN = –32dBm –45 dBm
LO feedthrough to IF LO = –0dBm –23 dBm
LO to mixer input feedthrough –32 dBm
LO to LNA input feedthrough –42 dBm

System gain LNA + Mixer 23.9 24.6 25.3 dB

1998 Jan 08

4

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

Table 1. Power ON/OFF Control Logic

PD1 PD2

0 0 Full chip power-down

0 1 or open Mixer on, LNA power-down
1 or open 0 Standby (bias on)
1 or open 1 or open Full chip power-on (default)

L3

6.8nH

LNA

IN

C1
100pF

C8
10nF

LNA
OUT

C13
33pF

V

+

CC

–

3V

C9

0.1µF

V

CC

L1

MIXER

OUT

560nH

L4
560n

C2
10nF

C10

2.2pF

MIXER

IN

L6
12nH

C14

6.8pF

C11

10nF

IF

OUT

C3

6.8pF

C16
10pF

C15
10pF

20 19 18 17 16 15 14 13 12 11

MIXER GND GND GND GND

OUT

SA631

PD1 PD2 GND GND GND GND GND GND GND

12345678910

LO

VCO

OUT

OUT

C12
100pF

SR01589

Figure 3. SA631 Application Circuit

1998 Jan 08

5

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

PERFORMANCE CHARACTERISTICS

-13.0

-13.5

-14.0

85°C

-14.5

-40°C

MIXER 1dB (dBm)

-15.0

-15.5

-16.0

2.5 3 3.5 4 4.5 5 5.5

Mixer 1dB Compression vs V

6.0

5.0

4.0

3.0

2.0

1.0

0.0

MIXER IP3 (dBm)

–1.0

–2.0

–3.0
–4.0

2.5 3 3.5 4 4.5 5 5.5

–15

–16

–17

–18

85°C

–19

–20

25°C

–21

LNA 1dB (dBm)

–22

–40°C

–23

–24

–25

2.5 3 3.5 4 4.5 5 5.5

LNA 1dB Compression vs V

25°C

V

(V)

CC

VCC (V)

Mixer IP3 vs V

V

CC

CC

CC

(V)

CC

-40°C

25°C

85°C

Figure 4.

-27.0

-40°C

-27.5

-28.0
25°C

-28.5

-29.0

-29.5

LNA GAIN (dB)

85°C

-30.0

-30.5

-31.0

2.5 3 3.5 4 4.5 5 5.5
0

LNA Gain (Disabled) vs V

-2

-3

-4

-5

-6
85°C

-7
25°C

-8

LNA IP3 (dBm)

-9

-10

-11
–40°C

-12

2.5 3 3.5 4 4.5 5 5.5

(V)

V

CC

(V)

V

CC

LNA IP3 vs V

CC

CC

SR01590

1998 Jan 08

6

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

PERFORMANCE CHARACTERISTICS

9.8

9.4

9.0

8.6
25°C

8.2

85°C

7.8

Icc (mA)

7.4

7.0

-40°C

6.6

6.2

5.8

2.5 3 3.5 4 4.5 5 5.5

ICC vs VCC and Temperature

(V)

V

CC

–39

–40

25°C

–41

–42

-40°C

–43

–44

85°C

–45

LO to LNA IN (dBm)

–46

–47

–48

–49

2.5 3 3.5 4 4.5 5 5.5

LO to LNA In Feedthrough vs V

V

(V)

CC

CC

11.0

10.5

-40°C

10.0
25°C

9.5

9.0
85°C

8.5

8.0

MIXER GAIN (dB)

7.5

7.0

6.5

6.0

2.5 3 3.5 4 4.5 5 5.5

Mixer Power Gain vs V

–28.0

–30.0

25°C

–32.0

-40°C

–34.0

85°C

–36.0

LO to MIXER IN (dBm)

–38.0

V

(V)

CC

CC

–20

–21

–22

–23

-40°C

–24

25°C

–25

–26

LO to IF (dBm)

85°C

–27

–28

–29

–30

2.5 3 3.5 4 4.5 5 5.5

LO to IF Feedthrough vs V

V

(V)

CC

CC

1998 Jan 08

–40.0

–42.0

2.5 3 3.5 4 4.5 5 5.5

LO to Mixer In Feedthrough vs V

V

(V)

CC

CC

SR01591

Figure 5.

7

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

PERFORMANCE CHARACTERISTICS

–42.0

–43.0

–44.0

–45.0

–46.0

MIXER IN to IF (dBm)

–47.0

–48.0

25°C

–40°C

85°C

2.5 3 3.5 4 4.5 5 5.5

Mixer In to IF Feedthrough vs V

11.0

10.8

10.6
85°C

10.4

10.2

25°C

10.0

9.8
–40°C

MIXER NOISE FIGURE (dB)

9.6

9.4

9.2

9.0

2.5 3 3.5 4 4.5 5 5.5

Mixer Noise Figure vs V

(V)

V

CC

CC

(V)

V

CC

CC

Figure 6.

15.6

15.4
–40°C

15.2

15.0

25°C

14.8

14.6

14.4

LNA GAIN (dB)

85°C

14.2

14.0

13.8

13.6

2.5 3 3.5 4 4.5 5 5.5

LNA Gain (Enabled) vs V

2.0

1.9
85°C

1.8

1.7

25°C

1.6

1.5

–40°C

1.4

1.3

LNA NOISE FIGURE (dB)

1.2

1.1

1.0

2.5 3 3.5 4 4.5 5 5.5

LNA Noise Figure vs V

(V)

V

CC

CC

(V)

V

CC

CC

SR01592

1998 Jan 08

8

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

CH2

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

1 U FS

S

11

4

3

2

1

Figure 7. Typical S11 of LNA at 3V

CH1

S

1 U FS

22

1: 40.1 Ω

-129.6 Ω
200 MHz

2: 24.0 Ω

-62.9 Ω
400 MHz

3: 18.6 Ω

-37.4 Ω
600 MHz

4: 14.1 Ω

10.5 pF

-16.7 Ω
900 MHz

SR01593

1: 40.5 Ω

2: 36.1 Ω

4

1

2

3

START 700. 000 000 MHz STOP 1 200. 000 000 MHz

3: 34.7 Ω

4: 34.9 Ω

SR01253

Figure 8. Typical S22 of LNA at 3V

-28.2 Ω
700 MHz

-12.4 Ω
800 MHz

3.5 Ω
900 MHz

3.74 Ω

661.4 pH
900 MHz

1998 Jan 08

9

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

CH1

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

10 U FS

S

21

2

1

3

4

Figure 9. Typical S21 of LNA at 3V

CH2

50 mU FS

S

12

1: 6.7 U

142.5 °
200 MHz

2: 5.9 U

112.3 °
400 MHz

3: 5.9 U

78.1 °
600 MHz

4: 4.5 U

21.2°
900 MHz

SR01254

4

3

1

2

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

1: 1.9 mU

2: 1.6 mU

3: 11.4 mU

4: 27.9 mU

Figure 10. Typical S12 of LNA at 3V

83.0 °
200 MHz

133.5 °
400 MHz

141.5 °
600 MHz

106.1°
900 MHz

SR01255

1998 Jan 08

10

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

CH1

1 U FS

S

11

4

3

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

1

2

Figure 11. Typical S11 of Mixer at 3V

1: 122.8 Ω

-144.9 Ω
200 MHz

2: 58.0 Ω

-86.8 Ω
400 MHz

3: 45.9 Ω

-62.3 Ω
600 MHz

4: 26.6 Ω

-43.2 Ω

4.085 pF
900 MHz

SR01256

1998 Jan 08

11

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

Table 2. Typical S-Parameters of LNA at 3V

LNA

Freq (MHz)

100 0.86 –20 7.4 160 0.001 91.91 0.59 –9.62
122 0.86 –24 7.1 156 0.001 62 0.58 –11.71
144 0.85 –28 7.0 151 0.001 105.42 0.58 –13.86
166 0.83 –32 6.9 148 0.000 91.65 0.57 –15.89
188 0.82 –36 6.8 144 0.002 100.23 0.57 –17.80
210 0.81 –41 6.7 140 0.002 73.57 0.56 –20.05
232 0.80 –45 6.6 136 0.002 99.70 0.55 –22.37
254 0.79 –48 6.5 133 0.001 84.00 0.54 –24.60
276 0.78 –52 6.4 130 0.001 103.18 0.53 –26.89
298 0.76 –56 6.3 126 0.002 94.33 0.52 –28.72
320 0.75 –59 6.3 123 0.002 66.98 0.51 –30.98
342 0.73 –63 6.2 119 0.002 108.53 0.50 –32.79
364 0.71 –66 6.1 116 0.002 118.13 0.48 –34.68
386 0.70 –69 6.0 113 0.001 103.4 0.47 –36.06
408 0.69 –72 5.9 111 0.001 175.94 0.46 –36.64
430 0.68 –76 5.9 109 0.004 174.1 0.45 –37.21
452 0.69 –78 6.0 106 0.006 162.02 0.46 –38.41
474 0.68 –82 6.1 102 0.007 160.07 0.47 –41.54
496 0.67 –85 6.1 97 0.008 153.6 0.47 –45.75
518 0.66 –89 6.1 93 0.010 146.17 0.46 –50.35
540 0.65 –92 6.1 89 0.009 142.13 0.45 –54.73
562 0.63 –96 6.1 85 0.010 138.49 0.43 –59.16
584 0.62 –99 6.0 81 0.011 146.17 0.42 –63.93
606 0.62 –102 5.9 77 0.011 140.55 0.40 –68.56
628 0.61 –104 5.8 72 0.013 137.2 0.38 –73.48
650 0.61 –107 5.7 69 0.013 130.62 0.36 –78.19
672 0.60 –109 5.7 65 0.016 129.77 0.34 –83.75
694 0.60 –112 5.6 61 0.016 131.94 0.31 –89.81
716 0.59 –115 5.5 57 0.017 128.67 0.29 –96.92
738 0.59 –118 5.5 53 0.019 127.53 0.27 –104.48
760 0.59 –121 5.3 48 0.021 123.42 0.24 –112.81
782 0.59 –124 5.3 44 0.021 122.31 0.22 –122.41
804 0.59 –126 5.1 40 0.022 119.52 0.21 –132.81
826 0.59 –129 5.0 36 0.024 118.29 0.19 –145.39
848 0.59 –132 4.9 31 0.026 115.98 0.18 –159.13
870 0.59 –135 4.8 26 0.027 111.9 0.17 –175.11
892 0.59 –138 4.6 22 0.028 108.11 0.18 169.02
914 0.59 –142 4.5 18 0.028 105.92 0.19 154.96
936 0.59 –144 4.3 14 0.028 106.13 0.20 141.94
958 0.59 –148 4.2 9 0.030 99.79 0.22 130.27

980 0.59 –151 4.0 4 0.031 99.30 0.24 119.5
1002 0.59 –153 3.8 0 0.031 94.81 0.26 110.61
1024 0.59 –157 3.6 –2 0.032 90.91 0.28 102.16
1046 0.59 –160 3.5 –6 0.032 85.65 0.30 94.98
1068 0.59 –164 3.3 –10 0.033 86.10 0.33 88.45
1090 0.59 –167 3.2 –14 0.033 80.59 0.35 82.47
1112 0.59 –170 3.0 –18 0.031 79.18 0.36 77.17
1134 0.58 –172 2.8 –22 0.030 46.32 0.38 71.98
1156 0.58 –175 2.7 –25 0.031 78.57 0.39 67.45
1178 0.57 –178 2.5 –28 0.031 73.66 0.41 62.73
1200 0.57 178 2.4 –31 0.029 71.78 0.42 58.87

|S11|

(U)

<S11 (deg)

|S21|

(U)

<S21 (deg)

|S12|

(U)

<S12 (deg)

|S22|

(U)

<S

(deg)

22

1998 Jan 08

12

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

Table 3. Typical S-Parameters of Mixer at 3V

Mixer

Freq (MHz)

100 0.73 –11
122 0.73 –147
144 0.72 –16
166 0.72 –19
188 0.72 –21
210 0.71 –24
232 0.70 –27
254 0.70 –29
276 0.69 –32
298 0.68 –34
320 0.67 –37
342 0.66 –39
364 0.64 –42
386 0.63 –44
408 0.62 –46
430 0.61 –48
452 0.59 –50
474 0.58 –52
496 0.57 –53
518 0.56 –54
540 0.55 –56
562 0.55 –57
584 0.54 –59
606 0.54 –61
628 0.54 –62
650 0.54 –64

|S11|

(U)

<S11 (deg)

Freq (MHz)

672 0.54 –65
694 0.54 –67
716 0.54 –69
738 0.54 –71
760 0.54 –73
782 0.55 –76
804 0.55 –78
826 0.55 –80
848 0.55 –82
870 0.55 –85
892 0.56 –87
914 0.55 –90
936 0.56 –93
958 0.56 –96

980 0.56 –98
1002 0.56 –101
1024 0.57 –104
1046 0.57 –106
1068 0.57 –110
1090 0.57 –112
1112 0.57 –115
1134 0.57 –118
1156 0.57 –121
1178 0.57 –124
1200 0.57 –127

Mixer

|S11|

(U)

<S11 (deg)

1998 Jan 08

13

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

1998 Jan 08

14

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

NOTES

1998 Jan 08

15

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

Data sheet status

Data sheet
status

Objective
specification

Preliminary
specification

Product
specification

Product
status

Development

Qualification

Production

Definition

This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.

This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.

[1]

[1] Please consult the most recently issued datasheet before initiating or completing a design.

Definitions

Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.

Disclaimers

Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can

reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.

Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone [phone]

 Copyright Philips Electronics North America Corporation 1998

All rights reserved. Printed in U.S.A.

Date of release: 01-98

Document order number: 9397 750 03414




1998 Jan 08

16