Datasheet RFM7N35, RFM7N40, RFP7N35, RFP7N40 Datasheet (Intersil)

July 1998

Semiconductor

RFM7N35, RFM7N40,

RFP7N35, RFP7N40

7A, 350V and 400V, 0.75 Ohm,

N-Channel Power MOSFETs

Features

• 7A, 350V and 400V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.75Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

RFM7N35 TO-204AA RFM7N35
RFM7N40 TO-204AA RFM7N40
RFP7N35 TO-220AB RFP7N35
RFP7N40 TO-220AB RFP7N40

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17424.

Symbol

D

G

S

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA JEDEC TO-220AB

DRAIN
(FLANGE)

GATE (PIN 1)

SOURCE (PIN 2)

DRAIN

(TAB)

SOURCE

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 1536.2

RFM7N35, RFM7N40, RFP7N35, RFP7N40

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFM7N35 RFM7N40 RFP7N35 RFP7N40 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . V

DSS

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DM

GS

350 400 350 400 V
350 400 350 400 V

D

7777A

15 15 15 15 A
±20 ±20 ±20 ±20 V
100 100 75 75 W

D

Linear Derating Factor (Above 25oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 0.8 0.6 0.6 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . TJ, T

-55 to 150 -55 to 150 -55 to 150 -55 to 150

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

pkg

300

L

260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSS

ID = 250µA, VGS = 0V

RFM7N35, RFP7N35 350 - - V
RFM7N40, RFP7N40 400 - - V

Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

θJC

VGS = VDS, ID = 250µA (Figure 8) 2 - 4 V
VDS = Rated BV
V

= 0.8 x Rated BV

DS

, TC = 25oC--1µA

DSS

, TC = 125oC- - 25 µA

DSS

VGS = ±20V, VDS = 0V - - ±100 nA

= 7A, VGS = 10V (Figures 6, 7) - - 0.75 Ω
= 7A, VGS = 10V - - 5.25 V

VDS = 200V, I
RL = 56Ω, VGS = 10V
(Figures 10, 11, 12)

≈ 3.5A, R

D

= 50Ω,

G

-1645ns

-5475ns

- 170 250 ns

- 62 100 ns

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 9)

- - 1600 pF

- - 300 pF

- - 200 pF
RFM7N35, RFM7N40 - - 1.25oC/W
RFP7N35, RFP7N40 - - 1.67oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

ISD = 7A - - 1.4 V
ISD = 7A, dISD/dt = 100A/µs - 870 - ns

5-2

RFM7N35, RFM7N40, RFP7N35, RFP7N40

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERA TURE

100

TC = 25oC
T

= MAX RATED

J

ID (MAX)
CONTINUOUS

10

OPERATION IN

1

, DRAIN CURRENT (A)

D

I

0

1 10 100 1000

THIS AREA IS

LIMITED BY r

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

DC OPERA

TION

DS(ON)

RFM7N35, RFP7N35
RFM7N40, RFP7N40

RFM7N35, 40
RFP7N35, 40

8

7

6

5

4

3

, DRAIN CURRENT (A)

2

D

I

1

0

25 50 75 100 125 150

RFP7N40

, CASE TEMPERATURE (oC)

T

C

RFM7N40

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

16

PULSE DURATION = 80µs
T

= 25oC

C

12

VGS = 7V TO 20V

8

, DRAIN CURRENT (A)

4

D

I

0

04 8121620

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 6V

VGS = 5V

VGS = 4V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

16

VDS = 10V
PULSE DURATION = 250µs

12

TC = 25oC

8

TC = 125oC

4

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

0

I

0246810

V

, GATE TO SOURCE (V)

GS

TC = -40oC

1.8
TC = 125oC

1.4

1

TC = 25oC

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

0.6

DS(ON)

r

0.2

048121620

I

, DRAIN CURRENT (A)

D

VGS = 10V
PULSE DURATION = 250µs

TC = -40oC

FIGURE 5. TRANSFER CHARA CTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESIST ANCE vs GATE

VOLTAGE AND DRAIN CURRENT

5-3

RFM7N35, RFM7N40, RFP7N35, RFP7N40

Typical Performance Curves

= 10V

V

GS

ID = 7A

2

1.5

1

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

-50 0 50 100 150 200
, JUNCTION TEMPERATURE (oC)

T

J

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1600

1400

1200

C

C

RSS

ISS

C

OSS

, DRAIN TO SOURCE (V)

V

DS

1000

800

600

400

C, CAPACITANCE (pF)

200

0

0 1020304050

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS
OSS

GD

≈ CDS + C

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GS

1.4
ID = 250µA

1.2

1

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.6

-50 0 50 100 150 200
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 8. NORMALIZED GATE THRESHOLD V OLTA GE vs

JUNCTION TEMPERATURE

, (V)

DS

V

400

300

200

100

BV

DSS

VDD = V

DSS

DRAIN TO SOURCE VOLTAGE

0

I

G(REF)

20

I

G(ACT)

GATE

TO

SOURCE

VOLTAGE

0.75 V

DSS

0.50 V

DSS

0.25 V

DSS

t, TIME (µs)

I

G(REF)

RL = 57Ω

= 0.45mA

= 10V

V

GS

VDD = V

80

DSS

I

G(REF)

I

G(ACT)

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

10

8

6

, (V)

4

GS

V

2

0

Test Circuits and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

0

V

GS

10%

0

r

90%

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

5-4