Datasheet RF2046, RF2046PCBA Datasheet (RF Micro Devices)

Preliminary

RF2046

4

Typical Applications

• Broadband, Low Noise Gain Blocks

• IF or RF Buffer Amplifiers

• Driver Stage for Power Amplifiers

Product Description

The RF2046 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro­cess, and has been designed for use as an easily-cas­cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 3000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.

GENERAL PURPOSE AMPLIFIER

• Final PA for Low Power Applications

• High Reliability Applications

• Broadband Test Equipment

45°

+1°

0.070
sq.

NOTES:

1. Shadedlead is pin 1.

2. Darkened areas are metallization.

0.055

+ 0.005

0.020

+ 0.002

0.200 sq.
Typ

0.040

+ 0.002

4

AMPLIFIERS

GENERAL PURPOSE

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

ü

SiGe HBT

GND

4

13

2

GND

Functional Block Diagram

Si CMOS

MARKING - C6

RF OUTRF OUTRF IN

Package Style: Micro-X Cer a m ic

Features

• DC to 3000MHz Operation

• Internally matched Input and Output

• 22dB Small Signal Gain

• 3.8dB Noise Figure

• 10mW Linear Output Power

• Single Positive Power Supply

Ordering Information

RF2046 General Purpose Amplifier
RF2046 PCBA Fully Assembled EvaluationBoard

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A5 010110

4-19

RF2046

Absolute Maximum Ratings

Parameter Rating Unit

SupplyCurrent 75 mA
Input RF Power +15 dBm
Operating Ambient Temperature -40 to +85 ° C
Storage Temperature -60 to +150 °C

Preliminary

Caution! ESD sensitive device.

RF Micro Devices believes thefurnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

4

Parameter

Min. Typ. Max.

Overall

Frequency Range DC to 3000 MHz
Gain 22.9 dB Freq=100MHz

Gain Flatness ±1.1 dB 100MHz to 2000MHz
Noise Figure 3.8 dB Freq=2000MHz
Input VSWR 1.7:1 In a 50Ω system, DC to 3000MHz

AMPLIFIERS

Output VSWR 1.7:1 In a 50 Ω system, DC to 3000MHz

GENERAL PURPOSE

Output IP
Output P
Reverse Isolation 23.2 dB Freq=2000MHz

3

1dB

Thermal

Theta

JC

Maximum junction temperature 109 °C
Mean Time Between Failures

Mean Time Between Failures
Mean Time Between Failures

Power Supply

Operating Voltage 3.0 3.5 4.0 V At pin 3 with I
Operating Current 35 mA

Specification

22.2 dB Freq=1000MHz

18 20.8 dB Freq=2000MHz

19.2 dB Freq=3000MHz

+23 dBm Freq=2000MHz±100kHz, P

+12.1 dBm Freq=2000MHz

199 °C/W

4

2.0x10

7

1.4x10

11

5.3x10

Unit Condition

T=25°C, VD=3.5V,ICC=35mA

ICC=35mA,P

years T
years T
years T

=+85°C

AMB

=+25°C

AMB

=-40°C

AMB

With 22Ω bias resistor

CC

DISS

=35mA

=120mW

TONE

=-18dBm

4-20

Rev A5 010110

Preliminary

R

RF2046

Pin Function Description Interface Schematic

1RFIN

2GND
3RFOUT

4GND

RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed,because this
will override the internal feedback loop and cause temperature instabil­ity.

Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance.

RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V

DC current into this pin to a desired level. The resistor value is deter­mined by the following equation:

------------------------------------------------------ -

R

=

Care shouldalso be taken in the resistor selection to ensure that the
current into the part never exceeds 75 mA over the planned oper­ating temperature.T his means that a resistor between the supply and

this pin is always required, even if a supply near 3.6V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.

Same as pin 2.

. The resistor is selected to set the

CC

V

SUPPLYVDEVICE

–()

I

CC

RF IN

RF OUT

4

AMPLIFIERS

GENERAL PURPOSE

RF IN

Application Schemati c

10 nF 22 pF

4

22 pF

13

2

V

CC

47 nH

R

BIAS

FOUT

22 pF

Rev A5 010110

4-21

RF2046

P1-1

NC

P1

Preliminary

Evaluation Board Schema t ic

(Download Bill of Materials from www.rfmd.com.)

1

VCC

2

GND

3

Drawing 204X400-

4

VCC

R1

Ω

22

C3

100 pFC41

P1-1

µ

F

4

C1

RF IN

AMPLIFIERS

GENERAL PURPOSE

50Ωµstrip 50Ωµstrip

J1

100 pF

13

2

L1

100 nH

C2

100 pF

RF OUT

J2

Evaluation Board Layout

Board Size 1.195" x 1.000"

4-22

Rev A5 010110

Preliminary

RF2046

Gain versus Frequency Across Temperature

I

=35mA

24.00

23.00

22.00

21.00

20.00

19.00

Gain (dB)

18.00

17.00

16.00

15.00

14.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

CC

Frequency(GHz)

OutputIP3 versus Frequency Across Temperature

I

=35mA

28.00

27.00

26.00

25.00

-40 C
26 C
85 C

CC

-40 C
26 C
85 C

Output P1dBversus Frequency Across Temperature

I

=35mA

16.00

15.00

14.00

13.00

12.00

Output Power (dBm)

11.00

10.00

-40 C
26 C
85 C

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

CC

Frequency(GHz)

Noise Figure versus Frequency Across Temperature

I

=35mA

8.00

7.00

6.00

-40 C
26 C
85 C

CC

4

AMPLIFIERS

GENERAL PURPOSE

24.00

23.00

22.00

3rd Order Intercept Power (dBm)

21.00

20.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Frequency(GHz)

Input VSWR versus Frequency Across Temperature

I

=35mA

2.50

-40 C
26 C
85 C

2.00

VSWR

1.50

CC

5.00

Noise Figure (dB)

4.00

3.00

2.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Frequency(GHz)

OutputVSWR versus Frequency Across Temperature

I

=35mA

2.50

-40 C
26 C
85 C

2.00

VSWR

1.50

CC

1.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Rev A5 010110

Frequency(GHz)

1.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Frequency(GHz)

4-23

RF2046

Preliminary

4

Reverse Isolation versusFrequency Across

26.00

25.00

24.00

23.00

22.00

21.00

Temperature, I

Reverse Isolation (dB)

20.00

19.00

18.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Frequency(GHz)

AMPLIFIERS

GENERAL PURPOSE

4

.

0

2

.

0

50 Ohms, 35 mA

8

.

0

6

.

0

S[2,2]

0

0.2

0.4

0.6

0.8

1.0-1.0

1.0

=35mA

CC

S[1,1]

2.0

-40 C
26 C
85 C

Swp Max

6GHz

0

.

2

0

.

3

0

.

4

0

.

5

0

.

0

1

5.0

3.0

4.0

10.0

4-24

0

.

0

1

-

2

.

-0

4

.

0

-

0

.

2

6

.

0

-

8

.

0

-

-

0

.

5

-

0

.

4

-

0

.

3

-

Swp Min

3e-05GHz

Rev A5 010110