Page 1
Preliminary
RF2045
4
Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
Product Description
The RF2045 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.
GENERAL PURPOSE AMPLIFIER
• Final PA for Low Power Applications
• High Reliability Applications
• Broadband Test Equipment
45°
+1°
0.070
sq.
NOTES:
1. Shadedlead is pin 1.
2. Darkened areas are metallization.
0.055
+ 0.005
0.020
+ 0.002
0.200 sq.
Typ
0.040
+ 0.002
4
AMPLIFIERS
GENERAL PURPOSE
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS
ü
SiGe HBT
GND
4
13
2
GND
Functional Block Diagram
Si CMOS
MARKING - C5
RF OUTRF OUTRF IN
Package Style: Micro-X Cer a m ic
Features
• DC to 6000MHz Operation
• Internally matched Input and Output
• 13dB Small Signal Gain
• +32dBm Output IP3
• +18dBm Output Power
• Excellent Gain Flatness
Ordering Information
RF2045 General Purpose Amplifier
RF2045 PCBA Fully Assembled EvaluationBoard
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A5 010110
4-13
Page 2
RF2045
Absolute Maximum Ratings
Parameter Rating Unit
Supply Current 120 mA
Input RF Power +20 dBm
Operating Ambient Temperature -40 to +85 ° C
Storage Temperature -60 to +150 °C
Preliminary
Caution! ESD sensitive device.
RF Micro Devices believes thefurnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4
Parameter
Min. Typ. Max.
Overall
Frequency Range DC to 6000 MHz
3dB Bandwidth 6 GHz
Gain 13.8 dB Freq=100MHz
Gain Flatness ±0.2 dB 100MHz to 2000MHz
AMPLIFIERS
Noise Figure 5.0 dB Freq=1000MHz
GENERAL PURPOSE
Input VSWR 1.7:1 In a 50Ω system, DC to 4000MHz
Output VSWR 1.7:1 In a 50 Ω system, DC to 4000MHz
Output IP
Output P
Reverse Isolation 18.4 dB Freq=2000MHz
3
1dB
Thermal
Theta
JC
Maximum junction temperature 142 °C
Mean Time Between Failures
Mean Time Between Failures
Mean Time Between Failures
Power Supply
Device Operating Voltage 4.6 5.0 5.6 V At pin 3 with I
Operating Current 65 mA
Specification
13.7 dB Freq=1000MHz
11 13.6 dB Freq=2000MHz
13.4 dB Freq=3000MHz
13 Freq=4000MHz
+33 dBm Freq=1000MHz±50kHz, P
+17.8 dBm Freq=1000MHz
173 °C/W
3
1.5x10
5
3.7x10
9
2.0x10
Unit Condition
T=25°C, ICC=65mA
ICC=65mA,P
years T
years T
years T
=+85°C
AMB
=+25°C
AMB
=-40°C
AMB
With 22Ω bias resistor
CC
DISS
=65mA
=310mW
TONE
=-10dBm
4-14
Rev A5 010110
Page 3
Preliminary
R
RF2045
Pin Function Description Interface Schematic
1RFIN
2GND
3RFOUT
4GND
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed,because this
will override the internal feedback loop and cause temperature instability.
Ground connection. Keep traces physically short and connect immediately to ground plane for best performance.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V
DC current into this pin to a desired level. The resistor value is determined by the following equation:
------------------------------------------------------ -
R
=
Care shouldalso be taken in the resistor selection to ensure that the
current into the part never exceeds 120mA over the planned operating temperature.T his means that a resistor between the supply and
this pin is always required, even if a supply near 5.0V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
Same as pin 2.
. The resistor is selected to set the
CC
V
SUPPLYVDEVICE
–()
I
CC
RF IN
RF OUT
4
AMPLIFIERS
GENERAL PURPOSE
RF IN
Application Schemati c
10 nF 22 pF
4
22 pF
13
2
V
CC
47 nH
R
BIAS
FOUT
22 pF
Rev A5 010110
4-15
Page 4
RF2045
P1-1
NC
P1
Preliminary
Evaluation Board Schema t ic
(Download Bill of Materials from www.rfmd.com.)
1
VCC
2
GND
3
Drawing 204X400-
4
VCC
R1
Ω
22
C3
100 pFC41
P1-1
µ
F
4
C1
RF IN
AMPLIFIERS
GENERAL PURPOSE
50Ωµstrip 50Ωµstrip
J1
100 pF
13
2
L1
100 nH
C2
100 pF
RF OUT
J2
Evaluation Board Layout
Board Size 1.195" x 1.000"
4-16
Rev A5 010110
Page 5
Preliminary
RF2045
Gain versus Frequency Across Temperature
I
=65mA
15.00
14.00
CC
Gain (dB)
13.00
12.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Frequency(GHz)
Output IP3 versus Frequency Across Temperature
I
=65mA
35.00
34.00
33.00
32.00
31.00
30.00
29.00
28.00
27.00
26.00
25.00
24.00
3rd Order Intercept Power (dBm)
23.00
22.00
21.00
20.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
CC
Frequency(GHz)
-40 C
26 C
85 C
-40 C
26 C
85 C
Output P1dBversus Frequency Across Temperature
I
=65mA
19.00
18.00
17.00
16.00
15.00
14.00
Output Power (dBm)
13.00
12.00
11.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
CC
Frequency(GHz)
Noise Figure versus Frequency Across Temperature
I
=65mA
CC
Frequency(GHz)
Noise Figure (dB)
10.00
9.00
8.00
7.00
6.00
5.00
4.00
3.00
2.00
-40 C
26 C
85 C
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
-40C
26 C
85 C
4
AMPLIFIERS
GENERAL PURPOSE
Input VSWR versus Frequency Across Temperature
2.00
1.50
VSWR
1.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Rev A5 010110
I
=65mA
CC
Frequency(GHz)
-40 C
26 C
85 C
OutputVSWR versus Frequency Across Temperature
I
=65mA
2.00
1.50
VSWR
1.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
CC
Frequency(GHz)
-40 C
26 C
85 C
4-17
Page 6
RF2045
Preliminary
4
Reverse Isolation versusFrequency Across
20.00
19.00
18.00
17.00
Reverse Isolation (dB)
16.00
15.00
0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00
Temperature, I
Frequency(GHz)
=65mA
CC
-40 C
26 C
85 C
AMPLIFIERS
GENERAL PURPOSE
4-18
Rev A5 010110
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