Datasheet RF2044, RF2044PCBA Datasheet (RF Micro Devices)

ü

4-7

4

GENERAL PURPOSE

AMPLIFIERS

Product Description

Ordering Information

Typical Applications

Features

Functional Block Diagram

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

SiGe HBT

Si CMOS

13

2

4

RF OUTRF OUTRF IN

GND

GND

MARKING - C4

RF2044

GENERAL PURPOSE AMPLIFIER

• Broadband, Low-Noise Gain Blocks

• IF or RF Buffer Amplifiers

• Driver Stage for Power Amplifiers

• Final PA for Low-Power Applications

• High Reliability Applications

• Broadband Test Equipment

The RF2044 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro­cess, and has been designed for use as an easily-cas­cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.

• DC to >6000MHz Operation

• Internally matched Input and Output

• 20dB Small Signal Gain

• 4.0dB Noise Figure

• 50mW Linear Output Power

• Single Positive Power Supply

RF2044 General Purpose Amplifier
RF204X PCBA Fully Assembled EvaluationBoard

4

Rev A9 010110

0.070
sq.

45°

+1°

0.055

+ 0.005

0.020

+ 0.002

0.040

+ 0.002

NOTES:

1. Shadedlead is pin 1.

2. Darkened areas are metallization.

0.200 sq.
Typ

Package Style: Micro-X Cera m ic

4-8

RF2044

Rev A9 010110

4

GENERAL PURPOSE

AMPLIFIERS

Absolute Maximum Ratings

Parameter Rating Unit

Input RF Power +13 dBm
Operating Ambient Temperature -40 to +85 °C
Storage Temperature -60 to +150 °C

Parameter

Specification

Unit Condition

Min. Typ. Max.

Overall

T=25°C, ICC=65mA

Frequency Range DC to >6000 MHz
3dB Bandwidth 3 GHz
Gain 20.4 dB Freq=100MHz

19.3 20.3 21.3 dB Freq=850MHz

16.5 19.0 dB Freq=2000MHz

17.5 dB Freq=3000MHz

16.6 Freq=4000MHz

14.3 Freq=6000MHz
Gain Flatness ±0.7 dB 100MHz to 2000MHz
Noise Figure 4.1 dB Freq=1000MHz
Input VSWR <1.4:1 In a 50Ω system, DC to 5000MHz

<1.7:1 In a 50Ω system, 5000MHz to 6000MHz

Output VSWR <1.2:1 In a 50Ω system, DC to 3000MHz

<1.8:1 In a 50Ω system, 3000MHz to 6000MHz

Output IP

3

+30.0 +33.5 dBm Freq=1000MHz

Output P

1dB

+18.5 dBm Freq=1000M Hz

Reverse Isolation 22.3 dB Freq=1000MHz

Thermal

ICC=65mA, P

DISS

=300mW

Theta

JC

188 °C/W

Maximum Measured Junction

Temperature at DC Bias Con­ditions

143 °C T

AMB

=+85°C

Mean Time Between Failures

1.3x10

3

years T

AMB

=+85°C

3.1x10

5

years T

AMB

=+25°C

1.6x10

9

years T

AMB

=-40°C

Power Supply

With 22Ω bias resistor

Device Operating Voltage 4.3 4.8 5.3 V At pin 3 with I

CC

=65mA

Operating Current 60 65 80 mA

Caution! ESD sensitive device.

RF Micro Devices believes thefurnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

4-9

RF2044

Rev A9 010110

4

GENERAL PURPOSE

AMPLIFIERS

Application Schematic

Pin Function Description Interface Schematic

1RFIN

RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of o peration, should be used in
most applications. DC coupling of the input is not allowed,because this
will override the internal feedback loop and cause tempe rature instabil­ity.

2GND

Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance.

3RFOUT

RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V

CC

. The resistor is selected to set the

DC current into this pin to a desired level. The resistor value is deter­mined by the following equation:

Care shouldalso be taken in the resistor selection to ensure that the

current into the part never exceeds 90mA over the planned oper­ating temperature.This means that a resistor between the supply and

this pin is always required, even if a supply near 4.9V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, shoul d be used in most applications. The supply side of
the bias network should also be well bypassed.

4GND

Same as pin 2.

R

V

SUPPLYVDEVICE

–()

I

CC

------------------------------------------------------ -

=

RF OUT

RF IN

R

FOUT

22 pF

R

BIAS

10 nF 22 pF

47 nH

22 pF

RF IN

V

CC

13

2

4

4-10

RF2044

Rev A9 010110

4

GENERAL PURPOSE

AMPLIFIERS

Evaluation Board Schema t ic

(Download Bill of Materials from www.rfmd.com.)

Evaluation Board Layout

Board Size 1.195" x 1.000"

C2

100 pF

C1

100 pF

50Ωµstrip 50Ωµstrip

RF OUT

J2

RF IN

J1

P1-1

NC

P1

VCC
GND

1
2
3

L1

100 nH

R1

22

Ω

VCC
P1-1

C3

100 pFC41

µ

F

Drawing 204X400-

13

2

4

4-11

RF2044

Rev A9 010110

4

GENERAL PURPOSE

AMPLIFIERS

Gain versus Frequency Across Temperature

I

CC

=65mA

13.00

14.00

15.00

16.00

17.00

18.00

19.00

20.00

21.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Frequency (GHz)

Gain (dB)

-40 C
26 C
85 C

OutputP1dB versus Frequency Across Temperature

I

CC

=65mA

12.00

13.00

14.00

15.00

16.00

17.00

18.00

19.00

20.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Frequency(GHz)

Output Power (dBm)

-40C
26 C
85 C

OutputIP3 versus Frequency Across Temperature

I

CC

=65mA

20.00

22.00

24.00

26.00

28.00

30.00

32.00

34.00

36.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Frequency(GHz)

3rd Order Intercept Power (dBm)

-40 C
26 C
85 C

Noise Figure versus Frequency Across Temperature

I

CC

=65mA

2.00

3.00

4.00

5.00

6.00

7.00

8.00

9.00

10.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Frequency(GHz)

Noise Figure (dB)

-40 C
26 C
85 C

Input VSWR versus Frequency Across Temperature

I

CC

=65mA

1.00

1.50

2.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Frequency(GHz)

VSWR

-40 C
26 C
85 C

OutputVSWR versus Frequency Across Temperature

I

CC

=65mA

1.00

1.50

2.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Frequency(GHz)

VSWR

-40 C
26 C
85 C

4-12

RF2044

Rev A9 010110

4

GENERAL PURPOSE

AMPLIFIERS

17.00

18.00

19.00

20.00

21.00

22.00

23.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Frequency(GHz)

Reverse Isolation (dB)

-40 C
26 C
85 C

Reverse Isolation versusFrequency Across Temperature

I

CC

=65mA

0

1.0

1.0-1.0

10.0

1

0

.

0

-

1

0

.

0

5.0

5

.

0

-

5

.

0

2.0

2

.

0

-

2

.

0

3.0

3

.

0

-

3

.

0

4.0

4

.

0

-

4

.

0

0.2

0

.

2

-0

.

2

0.4

0

.

4

-

0

.

4

0.6

0

.

6

-

0

.

6

0.8

0

.

8

-

0

.

8

50 Ohm, 65 mA

Swp Max

6GHz

Swp Min

3e-05GHz

S[2,2]

S[1,1]