Datasheet RF2043, RF2043PCBA Datasheet (RF Micro Devices)

RF2043

4

Typical Applications

• Broadband, Low Noise Gain Blocks

• IF or RF Buffer Amplifiers

• Driver Stage for Power Amplifiers

Product Description

The RF2043 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro­cess, and has been designed for use as an easily-cas­cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.

GENERAL PURPOSE AMPLIFIER

• Final PA for Low Power Applications

• High Reliability Applications

• Broadband Test Equipment

45°

+1°

0.070
sq.

NOTES:

1. Shadedlead is pin 1.

2. Darkened areas are metallization.

0.055

+ 0.005

0.020

+ 0.002

0.200 sq.
Typ

0.040

+ 0.002

4

AMPLIFIERS

GENERAL PURPOSE

Optimum Technology Matching® Applied

Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS

ü

SiGe HBT

GND

4

13

2

GND

Functional Block Diagram

Si CMOS

MARKING - C3

RF OUTRF OUTRF IN

Package Style: Micro-X Cer a m ic

Features

• DC to >6000MHz Operation

• Internally matched Input and Output

• 11dB Small Signal Gain

• +35dBm Output IP3

• +18.5 dBm Output Power

• Extremely Flat Gain Response

Ordering Information

RF2043 General Purpose Amplifier
RF204X PCBA Fully Assembled EvaluationBoard

RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro,NC 27409, USA

Tel [phone]

Fax [phone]

http://www.rfmd.com

Rev A4 010110

4-1

RF2043

Absolute Maximum Ratings

Parameter Rating Unit

Supply Current 120 mA
Input RF Power +20 dBm
Operating Ambient Temperature -40 to +85 ° C
Storage Temperature -60 to +150 °C

Caution! ESD sensitive device.

RF Micro Devices believes thefurnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).

4

Parameter

Min. Typ. Max.

Overall

Frequency Range DC to >6000 MHz
1dB Bandwidth 5.5 GHz
Gain 11.3 dB Freq=100MHz

AMPLIFIERS

Gain Flatness ±0.05 dB 100MHz to 2000MHz

GENERAL PURPOSE

Noise Figure 7.6 dB Freq=1000MHz
Input VSWR <1.8:1 In a 50Ω system, DC to 3000MHz

Output VSWR <1.8:1 In a 50Ω system, DC to 3000MHz

Output IP
Output P
Reverse Isolation 16.5 dB Freq=1000MHz

3

1dB

Thermal

Theta

JC

Maximum Measured Junction

Temperature at DC Bias Con­ditions

Mean Time Between Failures

Power Supply

Device Operating Voltage 5.0 5.5 6.0 V At pin 3 with I
Operating Current 70 mA

Specification

11.3 dB Freq=1000MHz

10.2 11.4 dB Freq=2000MHz

11.5 dB Freq=3000MHz

11.5 Freq=4000MHz

9.9 Freq=6000MHz

<2.5:1 In a 50Ω system, 3000MHz to 6000MHz

<2.6:1 In a 50Ω system, 3000MHz to 6000MHz

+34.5 dBm Freq=1000MHz
+18.5 dBm Freq=1000MHz

149 °C/W
142 °C T

3

1.4x10

5

3.4x10

9

1.8x10

Unit Condition

T=25°C, VD=5.5V,ICC=70mA

years T
years T
years T

ICC=70mA,P

=+85°C

AMB

=+85°C

AMB

=+25°C

AMB

=-40°C

AMB

With 22Ω bias resistor

DISS

CC

=370mW

=70mA

4-2

Rev A4 010110

RF2043

R

Pin Function Description Interface Schematic

1RFIN

2GND
3RFOUT

4GND

RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed,because this
will override the internal feedback loop and cause temperature instabil­ity.

Ground connection. Keep traces physically short and connect immedi­ately to ground plane for best performance.

RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V

DC current into this pin to a desired level. The resistor value is deter­mined by the following equation:

( V

V

------------------------------------------------------- -

R

=

Care shouldalso be taken in the resistor selection to ensure that the
current into the part never exceeds 120 mA over the planned oper­ating temperature.T his means that a resistor between the supply and

this pin is always required, even if a supply near 5.5V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.

Same as pin 2.

. The resistor is selected to set the

CC

SUPPLY

I

CC

DEVICE

)–

RF IN

RF OUT

4

AMPLIFIERS

GENERAL PURPOSE

RF IN

Application Schemati c

10 nF 22 pF

4

22 pF

13

2

V

CC

47 nH

R

BIAS

FOUT

22 pF

Rev A4 010110

4-3

RF2043

P1-1

NC

P1

Evaluation Board Schema t ic

(Download Bill of Materials from www.rfmd.com.)

1

VCC

2

GND

3

Drawing 204X400-

4

VCC

R1

Ω

22

C3

100 pFC41

P1-1

µ

F

4

C1

RF IN

AMPLIFIERS

GENERAL PURPOSE

50Ωµstrip 50Ωµstrip

J1

100 pF

13

2

Evaluation Board Layout

L1

100 nH

C2

100 pF

RF OUT

J2

Board Size 1.195" x 1.000"

4-4

Rev A4 010110

RF2043

Gain versus Frequency Across Temperature

I

=70mA

13.00

12.00

11.00

Gain (dB)

10.00

9.00

8.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

CC

Frequency (GHz)

Output IP3 versus Frequency Across Temperature

I

=70mA

36.00

34.00

32.00

30.00

28.00

26.00

24.00

3rd Order Intercept Power (dBm)

22.00

CC

-40 C
26 C
85 C

-40 C
26 C
85 C

Output P1dBversus Frequency Across Temperature

I

=70mA

20.00

19.00

18.00

17.00

16.00

15.00

14.00

Output Power (dBm)

13.00

12.00

11.00

10.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

CC

Frequency (GHz)

Noise Figure versus Frequency Across Temperature

I

=70mA

CC

Noise Figure (dB)

12.00

11.00

10.00

9.00

8.00

7.00

6.00

-40 C
26 C
85 C

-40C
26 C
85 C

4

AMPLIFIERS

GENERAL PURPOSE

20.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Input VSWR versus Frequency Across Temperature

2.00

1.50

VSWR

1.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Rev A4 010110

Frequency (GHz)

I

=70mA

CC

Frequency(GHz)

-40 C
26 C
85 C

5.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

Frequency (GHz)

OutputVSWR versus Frequency Across Temperature

I

=70mA

3.00

2.50

2.00

VSWR

1.50

1.00

-40 C
26 C
85 C

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

CC

Frequency(GHz)

4-5

RF2043

4

Reverse Isolation versus Frequency AcrossTemperature

22.00

21.00

20.00

19.00

18.00

Reverse Isolation (dB)

17.00

16.00

15.00

0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00

=70mA

I

CC

Frequency (GHz)

-40 C
26 C
85 C

AMPLIFIERS

GENERAL PURPOSE

4-6

Rev A4 010110