Page 1
RFP70N03, RF1S70N03,
SEMICONDUCTOR
December 1995
Features
• 70A, 30V
•r
•
= 0.010Ω
DS(ON)
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
o
• +175
C Operating Temperature
Description
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET
process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and
emitter switches for bipolar transistors. These transistors
can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER PACKAGE BRAND
RFP70N03 TO-220AB RFP70N03
RF1S70N03 TO-262AA F1S70N03
RF1S70N03SM TO-263AB F1S70N03
NOTE: When ordering use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S70N03SM9A.
RF1S70N03SM
70A, 30V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Packages
DRAIN
(FLANGE)
Symbol
DRAIN
(FLANGE)
GATE
SOURCE
JEDEC TO-220AB
JEDEC TO-262AA
A
JEDEC TO-263AB
A
M
A
G
D
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
Formerly developmental type TA49025.
Absolute Maximum Ratings T
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Above TC = +25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1995
= +25oC, Unless Otherwise Specified
C
3-45
RFP70N03, RF1S70N03,
DSS
DGR
GS
D
DM
(Refer to UIS Curve)
AS
D
T
STG
S
RF1S70N03SM UNITS
30 V
30 V
±20 V
70 A
200 A
150 W
1.0 W/oC
-55 to +175
o
C
File Number 3404.2
Page 2
Specifications RFP70N03, RF1S70N03, RF1S70N03SM
Electrical Specifications At Case Temperature (T
PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate-Source Leakage Current I
On Resistance r
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate Charge at 10V Q
DSS
GS(TH)
DSS
GSS
DS(ON)
ON
D(ON)
R
D(OFF)
F
OFF
G(TOT)
G(10)
) = +25oC, Unless Otherwise Specified
C
ID = 250µA, VGS = 0V 30 - - V
VGS = VDS, ID = 250µA2-4V
VDS=30V TC = 25oC--1µA
V
= 0V TC = 150oC--50µA
GS
VGS = ±20V - - 100 nA
ID = 70A, VGS = 10V - - 0.010 Ω
VDD = 15V, ID = 70A - - 80 ns
RL = 0.214Ω, VGS = +10V - 20 - ns
RGS = 2.5Ω -20-ns
-40-ns
-25-ns
- - 125 ns
VGS = 0 to 20V VDD = 24V,
- 215 260 nC
ID = 70A,
VGS = 0 to 10V - 120 145 nC
RL = 0.343Ω
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Diode
R
G(TH)
ISS
OSS
RSS
θJC
θJA
VGS = 0 to 2V - 6.5 8.0 nC
VDS = 25V, VGS = 0V - 3300 - pF
f = 1MHz - 1750 - pF
Junction to Ambient
Source-Drain Diode Ratings and Specifications
PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Diode Forward Voltage V
Reverse Recovery Time t
SD
RR
ISD = 70A - - 1.5 V
ISD = 70A, dISD/dt = 100A/µs - - 125 ns
- 750 - pF
- - 1.0
--80
o
C/W
o
C/W
3-46
Page 3
RFP70N03, RF1S70N03, RF1S70N03SM
Typical Performance Curves
300
100
CASE TEMPERATURE (TC) = +25oC
100µs
300
I
DM
STARTING TJ = +25oC
STARTING T
100
If R = 0
, AVALANCHE CURRENT (A)
tAV = (L) (IAS)/(1.3 x RATED BV
AS
I
If R ≠ 0
t
= (L/R) ln [(IAS x R)/(1.3 x RATED BV
AV
10
0.01
0.10
tAV, TIME IN AVALANCHE (ms)
DSS
- VDD)
OPERATION IN THIS
AREA MAY BE
10
LIMITED BY r
, DRAIN CURRENT (A)
D
I
1
1
V
DS
DS(ON)
V
DSS
MAX = 30V
10 50
, DRAIN-TO-SOURCE VOLTAGE (V)
1ms
10ms
100ms
DC
FIGURE 1. SAFE-OPERATING AREA CURVE FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
80
70
60
50
40
1.2
1.0
0.8
0.6
= +150oC
J
- VDD) +1]
DSS
1.0 10.0
30
, DRAIN CURRENT (A)
20
D
I
10
0
25 50 75 100 125 150 175
, CASE TEMPERATURE (oC)
T
C
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
200
160
120
80
40
, DRAIN CURRENT (A)
D
I
0
0.0 1.5 3.0 4.5 6.0 7.5
V
PULSE DURATION = 250µs, TC = +25oC
VGS = 8VVGS = 10V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
VGS = 7V
VGS = 6V
VGS = 5V
VGS = 4V
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 125 175150
T
, CASE TEMPERATURE (oC)
C
FIGURE4. NORMALIZED POWER DISSIPATION vs TEMPERA-
TURE DERATING CURVE
V
= 15V
200
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
160
120
80
40
, ON STATE DRAIN CURRENT (A)
D(ON)
I
0
0.0 2.0 4.0 6.0 8.0 10.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
DD
-55oC
+25oC
+175oC
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
3-47
Page 4
RFP70N03, RF1S70N03, RF1S70N03SM
Typical Performance Curves
2.0
PULSE DURATION = 250µs, VGS = 10V, ID= 70A
(Continued)
1.5
1.0
0.5
, NORMALIZED ON RESISTANCE
0.0
DS(ON)
r
-80 -40 0 40 80 120 160 200
FIGURE 7. NORMALIZED r
, JUNCTION TEMPERATURE (oC)
T
J
vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
DS(ON)
2.0
1.6
1.2
0.8
BREAKDOWN VOLTAGE
0.4
, NORMALIZED DRAIN-TO-SOURCE
DSS
0.0
BV
-80 -40 0 40 80 120 160 200
T
, JUNCTION TEMPERATURE (oC)
J
ID = 250µA
= VDS,ID = 250µA
V
2.0
GS
1.6
1.2
, NORMALIZED
0.8
GS(TH)
V
0.4
GATE THRESHOLD VOLTAGE
0.0
-80 -40 0 40 80 120 160 200
, JUNCTION TEMPERATURE (oC)
T
J
TEMPERATURE
V
= 0V, FREQUENCY (f) = 1MHz
7000
6000
5000
4000
3000
2000
C, CAPACITANCE (pF)
1000
0
0 5 10 15 20 25
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
GS
CISS
COSS
CRSS
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
1
10
0
10
0.5
0.2
P
0.1
-1
10
, THERMAL RESPONSE
0.05
JC
θ
0.02
Z
0.01
SINGLE PULSE
-2
10
-5
10
-4
10
NOTES:
1. DUTY FACTOR, D = t
2. PEAK TJ = PDM x (Z
-3
10
-2
10
DM
t
1
t
2
1/t2
) +T
JC
C
θ
-1
10
-0
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 10. TYPICAL CAPACITANCE vs VOLTAGE
30.0
VDD = BV
22.5
DSS
VDD = BV
15.0
0.75BV
DSS
0.50BV
DSS
0.25BV
7.5
, DRAIN SOURCE VOLTAGE (V)
DS
V
0.0
IGREF
()
----------------------
1
20
IGACT()
DSS
RL = 0.43Ω
I
V
= 3.0mA
G(REF)
= 10V
GS
t, TIME (µs)
0.75BV
0.50BV
0.25BV
DSS
DSS
DSS
()
IGREF
----------------------
80
IGACT()
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
3-48
DSS
10.0
7.5
5.0
2.5
0.0
, GATE SOURCE VOLTAGE (V)
GS
V
Page 5
RFP70N03, RF1S70N03, RF1S70N03SM
Test Circuits and Waveforms
BV
DSS
t
P
I
AS
t
AV
V
DS
V
DS
V
DD
TO OBTAIN
VARY t
P
REQUIRED PEAK I
V
GS
t
0V
P
R
AS
G
L
DUT
I
L
+
V
DD
-
0.01Ω
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
t
ON
t
D(ON)
t
V
DS
90%
R
t
10%
V
GS
PULSE WIDTH
10%
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
D(OFF)
90%
t
OFF
50%50%
t
F
10%
90%
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
V
DD
R
L
V
DS
V
GS
DUT
0V
R
GS
FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT
3-49
Page 6
RFP70N03, RF1S70N03, RF1S70N03SM
PSPICE Model for the RFP70N03, RF1S70N03, RF1S70N03SM
.SUBCKT RFP70N03 2 1 3 ; rev 9/16/92
*NOM TEMP = 25
o
C
CA 12 8 6.09e-9
CB 15 14 6.05e-9
CIN 6 8 3.40e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 35.4
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 3.10e-9
LSOURCE 3 7 1.82e-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 30.7e-6
RGATE 9 20 0.890
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 3.92e-3
RVTO 18 19 RVTOMOD 1
GATE
1
LGATE
10
-
ESG
+
EVTO
+
-
209
18
RGATE
8
S1A S2A
12 15
13
8
DPLCAP
6
8
+
-
VTO
-
6
RIN CIN
14
13
S2BS1B
13
6
EDSEGS
8
5
RDRAIN
16
+
MOS1
CBCA
14
+
5
8
-
DBREAK
8
MOS2
EBREAK
RSOURCE
11
+
17
18
-
7
RBREAK
21
DRAIN
LDRAIN
DBODY
LSOURCE
SOURCE
1817
RVTO
19IT
-
VBAT
+
2
3
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.605
.MODEL DBDMOD D (IS=7.91e-12 RS=3.87e-3 TRS1=2.71e-3 TRS2=2.50e-7 CJO=4.84e-9 TT=4.51e-8)
.MODEL DBKMOD D (RS=3.9e-2 TRS1=1.05e-4 TRS2=3.11e-5)
.MODEL DPLCAPMOD D (CJO=4.8e-9 IS=1e-30 N=10)
.MODEL MOSMOD NMOS (VTO=3.46 KP=47 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=8.46e-4 TC2=-8.48e-7)
.MODEL RDSMOD RES (TC1=2.23e-3 TC2=6.56e-6)
.MODEL RVTOMOD RES (TC1=-3.29e-3 TC2=3.49e-7)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-8.35 VOFF=-6.35)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.35 VOFF=-8.35)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.0 VOFF=3.0)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.0 VOFF=-2.0)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
3-50
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