Datasheet RF1S60P03SM, RFP60P03 Datasheet (Intersil)

RFG60P03, RFP60P03, RF1S60P03SM

Data Sheet July 1999

60A, 30V, 0.027 Ohm, P-Channel Power
MOSFETs

These P-Channel power MOSFETs are manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.

Formerly developmental type TA49045.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG60P03 TO-247 RFG60P03
RFP60P03 TO-220AB RFP60P03
RF1S60P03SM TO-263AB F1S60P03

NOTE: When ordering,use theentirepart number. Add the suffix 9Ato
obtain the TO-263AB variant in tape and reel, i.e. RF1S60P03SM9A.

File Number

Features

• 60A, 30V

DS(ON)

= 0.027Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

3951.3

Packaging

DRAIN

(BOTTOM

SIDE METAL)

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

JEDEC TO-263AB

GATE
SOURCE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

4-140

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFG60P03, RFP60P03, RF1S60P03SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFG60P03, RFP60P03, RFS60P03SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage, (Rgs = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

-30 V

-30 V

±20 V

60

Figure 6

176

1.17

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(-10)VGS
g(TH)VGS

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V (Figure 11) -30 - - V

= VDS, ID = 250µA (Figure 10) -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - -1 µA

DSS

, TC = 150oC - - -50 µA

DSS

VGS = ±20V - - ±100 nA

= 60A, VGS = 10V - - 0.027 Ω

VDD = 15V, I
VGS = -10V, RG = 2.5Ω,
(Figure 13)

≈ 60A, R

D

= 0.25Ω,

L

- - 140 ns

-20-ns

-75-ns

-35-ns

-40-ns

- - 115 ns
= 0 to -20V VDD = -24V, ID≈ 60A,
= 0 to -10V - 100 120 nC
= 0 to -2V - 7.5 9 nC

RL = 0.4Ω
I

= -3mA

g(REF)

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)

- 190 230 nC

- 3000 - pF

- 1500 - pF

- 525 - pF

(Figure 3) - - 0.85oC/W
TO-220AB, TO- 263AB - - 62
TO-247 - - 30

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

rr

NOTE:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)

4-141

ISD = -60A - - -1.75 V
ISD = -60A, dISD/dt = 100A/µs - - 200 ns

RFG60P03, RFP60P03, RF1S60P03SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

-70

-60

-50

-40

-30

-20

, DRAIN CURRENT (A)

D

I

-10

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.5

0.2

0.1

THERMAL IMPEDANCE

0.01
10

-5

0.1

0.05

0.02

0.01
SINGLE PULSE

-4

10

NORMALIZED

JC,

θ

Z

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-500

-100

OPERATION IN THIS

-10

AREA MAY BE

, DRAIN CURRENT (A)

D

I

LIMITED BY r
TC = 25oC

= MAX RATED

T

J

-1

-1 -10 -60

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

-3

10

t, RECTANGULAR PULSE DURATION (s)

100µs

1ms

10ms

100ms
DC

-2

10

3

-10

, PEAK CURRENT (A)

2

DM

-10

I

-50
10

-1

10

TC = 25oC

VGS = -20V

VGS = -10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-6

-5

10

10

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

-4

-3

10

t, PULSE WIDTH (ms)

1/t2

x R

JC

θ

0

10

175 TC–



II

=

----------------------- -



25

150



-2

10

10

JC

θ

-1

+ T

10

C

1

10

0

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-142

RFG60P03, RFP60P03, RF1S60P03SM

Typical Performance Curves

-200

-100

STARTING TJ = 150oC

If R = 0

, AVALANCHE CURRENT (A)

AS

I

= (L) (IAS) / (1.3RATED BV

t

AV

If R ≠ 0
t

= (L/R) ln [(IAS*R) / (1.3 RATED BV

AV

-10

0.01 0.1 1 10
t

, TIME IN AVALANCHE (ms)

AV

DSS

Unless Otherwise Specified (Continued)

STARTING TJ = 25oC

- VDD)

- VDD) + 1]

DSS

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

-120

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = -15V

-90

-55oC

25oC

-120
VGS = -20V

-90

-60

, DRAIN CURRENT (A)

-30

D

I

0

0 -1.5 -3.0 -4.5 -6.0 -7.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -10V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC

VGS = -4.5V

VGS = -8V

VGS = -7V
VGS = -6V

VGS = -5V

FIGURE 7. SATURATION CHARACTERISTICS

2

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS= 1.5V, ID = 60A

1.5

175oC

-60

-30

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

0

0 -2 -4 -6 -8 -10

V

, GATE TO SOURCE VOLTAGE (V)

GS

1

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160 200
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2

VGS = VDS, ID = 250µA

1.5

1

NORMALIZED GATE

0.5

THRESHOLD VOLTAGE

0

-80 -40 0 40 80 160120 200
TJ, JUNCTION TEMPERATURE (oC)

2

ID = 250µA

1.5

1

0.5

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE

4-143

FIGURE 11. NORMALIZED DRAIN TOSOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

RFG60P03, RFP60P03, RF1S60P03SM

Typical Performance Curves

Unless Otherwise Specified (Continued)

5000

VGS = 0V, f = 1MHz

4000

ISS

C

= C

RSS

C

C

ISS

OSS

≈ C

GD

DS

+ C

GD

GS

= CGS + C

C

3000

C

OSS

2000

C, CAPACITANCE (pF)

1000

C

RSS

0

0

-5 -10 -15 -20 -25
VDS, DRAIN TO SOURCE VOLTAGE(V)

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Test Circuits and Waveforms

V

DS

L

-30

-22.5

VDD = BV

DSS

VDD = BV

DSS

-10

-7.5

RL = 0.5Ω

-15

-7.5

0.75 BV

0.50 BV

0.25 BV

G(REF)

V

GS

DSS
DSS
DSS

= -10V

0.75 BV

0.50 BV

0.25 BV

DSS
DSS
DSS

-5.0

-2.5

= -3mA

I

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

I

20

G(REF)

I

G(ACT)

t, TIME (µs)

80

I

G(REF)

I

G(ACT)

0

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 13. NORMALIZED SWITCHING WAVEFORMSFOR

CONSTANT GATE CURRENT

t

AV

0

, GATE TO SOURCE VOLTAGE (V)

GS

V

VARY t

TO OBTAIN

P

REQUIRED PEAK I

0V
V

GS

t

P

AS

R

G

DUT

I

AS

0.01Ω

-

V

DD

+

V

DD

I

AS

t

P

BV

DSS

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORM

t

ON

t

d(ON)

10%

50%

t

r

90%

10%

V

DS

R

L

V

GS

-

V

DD

V

GS

R

GS

DUT

+

0

V

DS

V

GS

0

PULSE WIDTH

t

d(OFF)

V

DS

t

90%

OFF

90%

50%

t

f

10%

FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

4-144

RFG60P03, RFP60P03, RF1S60P03SM

Test Circuits and Waveforms

V

DS

V

GS

I

G(REF)

FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS

(Continued)

R

L

DUT

V

Q

GS

g(TH)

Q

g(-10)

Q

g(TOT)

0

VGS= -2V

­V

DD

+

V

0

I

G(REF)

-V

DD

DS

VGS= -10V

VGS= -20V

4-145

RFG60P03, RFP60P03, RF1S60P03SM

PSPICE Electrical Model

.SUBCKT RFP60P03 2 1 3 REV 6/21/94

CA 12 8 5.01e-9
CB 15 14 3.9e-9
CIN 6 8 3.09e-9

DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD

EBREAK 5 11 17 18 -36.59
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1

IT 8 17 1

LDRAIN 2 5 1e-9
LGATE 1 9 4.92e-9
LSOURCE 3 7 2.36e-9

MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01

RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e-4
RGATE 9 20 3.25
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 11.28e-3
RVTO 18 19 RVTOMOD 1

S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD

GATE

1

LGATE

209

RGATE

10

DPLCAP

EVTO

+

18

8

S1A S2A

12

13

8

CA

EGS EDS

5

+

-

6
8

ESG

RDRAIN

EBREAK

16

VTO

+

-

6

RIN

+

-

14
13

6
8

CIN

15

S2BS1B

13

CB

21

MOS1

14

+

5
8

-

8

MOS2

DBREAK

RSOURCE

17
18

11

17 18

+

-

LSOURCE

7

RBREAK

IT

LDRAIN

DBODY

RVTO

19

VBAT

+

DRAIN
2

3

SOURCE

VBAT 8 19 DC 1
VTO 21 6 -0.92

.MODEL DBDMOD D (IS=4.21e-13 RS=1e-2 TRS1=-2.69e-4 TRS2=-1.33e-6 CJO=5.05e-9 TT=5.33e-8)
.MODEL DBKMOD D (RS=3.80e-2 TRS1=-4.76e-4 TRS2=-4.17e-12)
.MODEL DPLCAPMOD D (CJO=4.05e-9 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.98 KP=16.27 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=8.05e-4 TC2=1.48e-6)
.MODEL RDSMOD RES (TC1=2.80e-3 TC2=2.62e-6)
.MODEL RVTOMOD RES (TC1=-3.34e-3 TC2=1.46e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=7.5 VOFF=4.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.5 VOFF=7.5)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.43 VOFF=-3.57)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.57 VOFF=1.43)

.ENDS

NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; authors, William J. Hepp and C. Frank Wheatley.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

4-146