Datasheet RF1S45N06SM, RFG45N06 Datasheet (Intersil)

Page 1
RFG45N06, RFP45N06, RF1S45N06SM
Data Sheet July 1999 File Number
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs
Formerly developmental type TA49028.
Ordering Information
PART NUMBER PACKAGE BRAND
RFG45N06 TO-247 RFG45N06 RFP45N06 TO-220AB RFP45N06 RF1S45N06SM TO-263AB F1S45N06
NOTE: When ordering, use the entire part number. Addthesuffix,9A, to obtain the TO-263AB variant in tape and reel, i.e.RF1S45N06SM9A.
Features
• 45A, 60V
DS(ON)
= 0.028
®
Model
•r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
C Operating Temperature
• 175
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
DRAIN
GATE
SOURCE
3574.4
Packaging
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247 JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
4-455
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Page 2
RFG45N06, RFP45N06, RF1S45N06SM
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFG45N06, RFP45N06
RF1S45N06SM UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RG = 20K) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DSS
DGR
DM
GS
AS
D
Refer to Peak Current Curve
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
60 V 60 V 45
±20 V
Refer to UIS Curve
131
0.877
-55 to 175
300 260
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I Drain Source On Resistance (Note 2) r
DS(ON)ID
Turn-On Time t Turn-On Delay Time t
d(ON)
Rise Time t Turn-Off Delay Time t
d(OFF)
Fall Time t Turn-Off Time t Total Gate Charge Q
g(TOT)VGS
Gate Charge at 10V Q Threshold Gate Charge Q Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction to Case R Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
ON
r
f
OFF
g(10)
g(TH)
ISS OSS RSS
θJC
θJA
= 250µA, VGS = 0V (Figure 11) 60 - - V
= VDS, ID = 250µA (Figure 10) 2 - 4 V VDS = Rated BV VDS = 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
, VGS = 0V (125oC) - - 25 µA
DSS
VGS = ±20V - - ±100 nA
= 45A, VGS = 10V (Figure 9) - - 0.028
VDD = 30V, ID = 45A RL = 0.667, VGS = +10V RG = 3.6(Figure 13)
- - 120 ns
-12- ns
-74- ns
-37- ns
-16- ns
- - 80 ns
= 0 to 20V VDD = 48V, ID = 45A, VGS = 0 to 10V - 67 80 nC VGS = 0 to 2V - 3.7 4.5 nC
RL = 1.07 I
= 1.5mA
g(REF)
(Figure 13)
VDS = 25V, VGS = 0V f = 1MHz (Figure 12)
- 125 150 nC
- 2050 - pF
- 600 - pF
- 200 - pF
- - 1.14
o
C/W
--80oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V Diode Reverse Recovery Time t
SD
rr
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current Capability Curve (Figure 5).
4-456
ISD = 45A - - 1.5 V ISD = 45A, dISD/dt = 100A/µs - - 125 ns
Page 3
RFG45N06, RFP45N06, RF1S45N06SM
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE
TEMPERATURE
1
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.5
0.2
0.1
0.1
0.05
0.02
THERMAL IMPEDANCE
, NORMALIZED TRANSIENT
JC
θ
Z
0.01
0.01 SINGLE PULSE
-5
10
-4
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
400
100
10
, DRAIN CURRENT (A)
D
I
OPERATION IN THIS AREA MAY BE LIMITED BY r
1
1 10 100
DS(ON)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
V
DSS(MAX)
T
= MAX RATED
J
SINGLE PULSE
= 60V
-3
10
t, RECTANGULAR PULSE DURATION (s)
TC = 25oC
100µs
1ms
10ms
100ms
DC
-2
10
3
10
VGS = 20V
, PEAK CURRENT (A)
2
10
DM
I
40
10-310
NOTES: DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-1
10
VGS = 10V
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION
-2
-1
10
t, PULSE WIDTH (ms)
P
DM
t
1
t
2
2
x R
JC
θ
175 TC–
----------------------- ­150
2
10
+ T
C
TC = 25oC
3
10
JC
θ
0
10
FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS:

II
=

25

0
10
1
10
1
10
4
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
4-457
Page 4
RFG45N06, RFP45N06, RF1S45N06SM
Typical Performance Curves
300
100
STARTING TJ = 150oC
10
If R = 0
AVALANCHE CURRENT (A)
tAV = (L) (IAS) / (1.3 RATED BV
AS,
I
If R 0
= (L/R) ln [(IAS*R) / (1.3 RATED BV
t
AV
1
0.01 0.1 1 10
STARTING TJ = 25oC
DSS
TIME IN AVALANCHE (ms)
t
AV,
Unless Otherwise Specified (Continued)
- VDD)
- VDD) + 1]
DSS
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
125
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V
100
-55
o
25oC
C
175oC
125
100
75
50
, DRAIN CURRENT (A)
D
I
25
0
0 1.5 3 4.5 6 7.5
VGS = 10V
V
DRAIN TO SOURCE VOLTAGE (V)
DS,
VGS = 8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 7V
T
C
VGS = 6V
VGS = 5V
VGS = 4.5V
FIGURE 7. SATURATION CHARACTERISTICS
2.5
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS= 10V, ID = 45A
2
= 25oC
75
50
25
, DRAIN TO SOURCE CURRENT (A)
DS(ON)
0
I
012345678910
, GATE TO SOURCE VOLTAGE (V)
V
GS
1.5
1
ON RESISTANCE
0.5
NORMALIZED DRAIN TO SOURCE
0
-80 -40 0 40 80 120 160 200 TJ,JUNCTION TEMPERATURE (oC)
FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0 VGS = VDS, ID = 250µA
1.5
1.0
NORMALIZED GATE
0.5
THRESHOLD VOLTAGE
0
-80 -40 0 40 80 160120 200 TJ,JUNCTION TEMPERATURE (oC)
2.0 ID = 250µA
1.5
1.0
0.5
BREAKDOWN VOLTAGE
NORMALIZED DRAIN TO SOURCE
0
-80 -40 0 40 80 120 160 200 TJ,JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGEvs
JUNCTION TEMPERATURE
4-458
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Page 5
RFG45N06, RFP45N06, RF1S45N06SM
Typical Performance Curves
Unless Otherwise Specified (Continued)
4000
VGS = 0V, f = 1MHz C
= CGS + C
3000
ISS
C
= C
RSS
C
CDS + C
OSS
C
ISS
GD
GD
GD
2000
C
C
OSS
RSS
1000
C, CAPACITANCE (pF)
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Test Circuits and Waveforms
V
DS
L
VARY t
TO OBTAIN
P
REQUIRED PEAK I
V
GS
AS
R
G
DUT
+
-
60
45
30
15
DRAIN TO SOURCE VOLTAGE (V)
DS,
V
0
VDD = BV
I
G(REF)
20
I
G(ACT)
DSS
0.75 BV
0.50 BV
0.25 BV
DSS DSS DSS
RL = 1.33
= 1.5mA
I
G(REF)
V
= 10V
GS
t, TIME (µs)
0.75 BV
0.50 BV
0.25 BV
VDD = BV
DSS DSS DSS
80
DSS
I
G(REF)
I
G(ACT)
10
7.5
5.0
2.5
0
GATE TO SOURCE VOLTAGE (V)
GS,
V
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
BV
DSS
t
P
I
AS
V
DD
V
DS
V
DD
0V
P
I
AS
0.01
0
t
AV
t
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
t
ON
t
d(ON)
t
R
L
+
V
R
G
DD
-
V
DS
90%
0
r
10%
DUT
V
GS
V
GS
10%
0
50%
PULSE WIDTH
t
d(OFF)
90%
FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
t
OFF
50%
t
f
90%
10%
4-459
Page 6
RFG45N06, RFP45N06, RF1S45N06SM
Test Circuits and Waveforms
V
DS
V
GS
I
g(REF)
FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS
DUT
V
R
L
+
V
DD
-
DD
VGS= 2V
0
I
g(REF)
0
Q
V
GS
Q
g(TH)
V
DS
g(10)
Q
g(TOT)
VGS= 20V
VGS = 10V
4-460
Page 7
PSPICE Electrical Model
.SUBCKT RFP45N06213 REV 1/18/93
*NOM TEMP = +25
o
C
RFG45N06, RFP45N06, RF1S45N06SM
CA 12 8 3.49E-9 CB 15 14 3.8E-9 CIN 6 8 2E-9
DBODY 7 5 DBDMOD DBREAK 5 11DBKMOD DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 66.5 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1E-9 LGATE 1 9 5.65E-9 LSOURCE 3 7 4.13E-9
MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 3.58E-3 RGATE 9 20 0.681 RIN 6 8 1E9 RSOURCE 8 7 RDSMOD 13.6E-3 RVTO 18 19 RVTOMOD 1
GATE 1
LGATE
RGATE
ESG
EVTO
+
209
S1A S2A
12
10
-
+
-
18
8
13
8
DPLCAP
6 8
+
-
VTO
-
6
RIN CIN
15
14 13
S2BS1B 13
6
EDSEGS
8
5
RDRAIN
16 +
MOS1
CBCA
14
+
5 8
-
DBREAK
8
MOS2
EBREAK
RSOURCE
11
+
17 18
-
7
RBREAK
21
DRAIN
LDRAIN
DBODY
LSOURCE
SOURCE
1817
RVTO
19IT
-
VBAT
+
2
3
S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1 VTO 21 6 0.92
.MODEL DBDMOD D (IS=8.2E-13 RS=7.86E-3 TRS1=2.26E-3 TRS2=2.90E-6 CJO=2.07E-9 TT=5.72E-8) .MODEL DBKMOD D (RS=1.93E-1 TRS1=5.13E-4 TRS2=-2.15E-5) .MODEL DPLCAPMOD D (CJO=1.25E-9 IS=1E-30 N=10) .MODEL MOSMOD NMOS (VTO=3.862 KP=55.57 IS=1E-30 N=10 TOX=1 L=1U W=1U) .MODEL RBKMOD RES (TC1=1.12E-3 TC2=-5.18E-7) .MODEL RDSMOD RES (TC1=4.64E-3 TC2=1.58E-5) .MODEL RVTOMOD RES (TC1=-4.27E-3 TC2=-6.55E-6) .MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-6.5 VOFF=-1.7) .MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.7 VOFF=-6.5) .MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3.0 VOFF=2) .MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=2.0 VOFF=-3.0)
.ENDS
NOTE: For furtherdiscussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley.
4-461
Page 8
RFG45N06, RFP45N06, RF1S45N06SM
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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NORTH AMERICA
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4-462
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