Datasheet RF1S45N06 Datasheet (Fairchild Semiconductor)

RFG45N06, RFP45N06,

SEMICONDUCTOR

RF1S45N06, RF1S45N06SM

December 1995

Features

• 45A, 60V

•r

•

= 0.028Ω

DS(ON)

Temperature Compensating

PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

• +175

C Operating Temperature

Description

The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
N-Channel power MOSFETs are manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch­ing regulators, switching converters, motor drivers, relay
drivers and emitter switches for bipolar transistors. These
transistors can be operated directly from integrated circuits.

PACKAGE AVAILABILITY

PART NUMBER PACKAGE BRAND

RFG45N06
RFP45N06
RF1S45N06
RF1S45N06SM

NOTE: When ordering, use the entire part number. Add the suf fix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.RF1S45N06SM9A.

Formerly developmental type TA49028.

Symbol

TO-247 RFG45N06
TO-220AB RFP45N06
TO-262AA F1S45N06
TO-263AB F1S45N06

D

G

45A, 60V, Avalanche Rated N-Channel

Enhancement-Mode Power MOSFETs

Packages

JEDEC STYLE TO-247

SOURCE

DRAIN

DRAIN

GATE

GATE

GATE

DRAIN

(BOTTOM

SIDE METAL)

DRAIN

(FLANGE)

DRAIN

(FLANGE)

GATE
SOURCE

JEDEC TO-220AB

JEDEC TO-262AA

A

JEDEC TO-263AB

A

M

A

SOURCE

SOURCE

DRAIN

DRAIN

(FLANGE)

S

Absolute Maximum Ratings T

Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Maximum Avalanche Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation

= +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T

C

Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright

© Harris Corporation 1995

= +25oC

C

3-33

STG

DSS

DGR

GS

DM

AS

AM

, T

RFG45N06, RFP45N06

RF1S45N06, RF1S45N06SM UNITS

D

Refer to Peak Current Curve

Refer to UIS Curve

D

T

J

60 V
60 V

±20 V

45

125 A

131

0.877

-55 to +175

File Number 3574.2

A

W

W/oC

o

C

Specifications RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain-Source Breakdown Voltage BV

Gate Threshold Voltage V

Zero Gate Voltage Drain Current I

Gate-Source Leakage Current I

On Resistance r

Turn-On Time t

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Turn-Off Time t

Total Gate Charge Q

Gate Charge at 10V Q

DSS

GS(TH)

DSS

GSS

DS(ON)

ON

D(ON)

R

D(OFF)

F

OFF

G(TOT)

G(10)

ID = 250µA, VGS = 0V 60 - - V

VGS = VDS, ID = 250µA2-4V

VDS = 60V,

TC = +25oC--1µA

VGS = 0V

T

= +150oC- -50µA

C

VGS = ±20V - - 100 nA

ID = 45A, VGS = 10V - - 0.028 Ω

VDD = 30V, ID = 45A

- - 120 ns
RL = 0.667Ω, VGS = +10V
RGS = 3.6Ω

-12- ns

-74- ns

-37- ns

-16- ns

- - 80 ns

VGS = 0 to 20V VDD = 48V,

- 125 150 nC

ID = 45A,

VGS = 0 to 10V - 67 80 nC

RL = 1.07Ω

Threshold Gate Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

Source-Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V

Reverse Recovery Time t

SD

RR

G(TH)

ISS

VGS = 0 to 2V - 3.7 4.5 nC

VDS = 25V, VGS = 0V

- 2050 - pF
f = 1MHz

OSS

RSS

θJC

θJA

- 600 - pF

- 200 - pF

- - 1.14

--80

ISD = 45A - - 1.5 V

ISD = 45A, dISD/dt = 100A/µs - - 125 ns

o

C/W

o

C/W

3-34

RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

Typical Performance Curves

400

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

DS(ON)

V

DSS

MAX = 60V

1

1 10 100

V

, DRAIN-TO-SOURCE VOLTAGE (V)

DS

T

= +25oC

C

100µs

1ms

10ms

100ms

DC

10

1

0.5

0.2

, NORMALIZED

JC

θ

Z

THERMAL RESPONSE

0.1

0.1

0.05

0.02

0.01

SINGLE PULSE

0.01

-5

10

10

t, RECTANGULAR PULSE DURATION (s)

P

DM

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-4

-3

10

-2

10

-1

10

FIGURE 1. SAFE- OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL

IMPEDANCE

50

40

30

10

3

VGS = 20V

FOR TEMPERATURES ABOVE +25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

175 TC–




II

=

----------------------- -

25



150

t

1

t

1/t2

+ T

JC

θ

0

10

T

= +25oC

C

2

C

1

10

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

125

VGS = 10V

100

75

50

, DRAIN CURRENT (A)

D

I

25

0

0.0 1.5 3.0 4.5 6.0 7.5

PULSE DURATION = 250µs, TC = +25oC

VGS = 8V

V

DRAIN-TO-SOURCE VOLTAGE (V)

DS,

VGS = 7V

VGS = 6V

VGS = 5V

VGS = 4.5V

VGS = 10V

2

10

TRANSCONDUCTANCE

, PEAK CURRENT CAPABILITY (A)
I

MAY LIMIT CURRENT
IN THIS REGION

DM

40

10-310-210

-1

0

10

10110210

t, PULSE WIDTH (ms)

FIGURE 4. PEAK CURRENT CAPABILITY

125

PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX

100

75

50

25

, ON STATE DRAIN CURRENT (A)

D(ON)

I

0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, GATE-TO-SOURCE VOLTAGE (V)

-55

o

+25oC

C

3

= 15V

V

DD

+175oC

4

10

FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS

3-35

RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

Typical Performance Curves

2.5

2.0

1.5

1.0

0.5

, NORMALIZED ON RESISTANCE

DS(ON)

0.0

r

-80 -40 0 40 80 120 160 200

FIGURE 7. NORMALIZED r

2.0

1.5

PULSE DURATION = 250µs, VGS= 10V, ID = 45A

TJ,JUNCTION TEMPERATURE (oC)

vs JUNCTION

DS(ON)

TEMPERATURE

(Continued)

ID = 250µA

2.0

VGS = VDS, ID = 250µA

1.5

1.0

, NORMALIZED GATE

0.5

THRESHOLD VOLTAGE

GS(TH)

V

0.0

-80 -40 0 40 80 160120 200
TJ,JUNCTION TEMPERATURE (oC)

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs

TEMPERATURE

1.2

1.0

0.8

1.0

0.5

BREAKDOWN VOLTAGE

NORMALIZED DRAIN-TO-SOURCE

DSS,

0.0

BV

-80 -40 0 40 80 120 160 200
TJ,JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN

VOLTAGE vs TEMPERATURE

4000

3000

C

ISS

2000

C

C, CAPACITANCE (pF)

1000

OSS

C

RSS

0

0 5 10 15 20 25

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 10. NORMALIZED POWER DISSIPATION vs

TEMPERATURE DERATING CURVE

60

45

30

15

DRAIN SOURCE VOLTAGE (V)

DS,

V

0

VDD = BV

20

I

G(REF)

I

G(ACT)

DSS

0.75 BV

0.50 BV

0.25 BV

DSS
DSS
DSS

RL = 1.33Ω
I

= 1.5mA

G(REF)

VGS = 10V

t, TIME (µs)

0.75 BV

0.50 BV

0.25 BV

VDD = BV

DSS
DSS
DSS

80

DSS

I

G(REF)

I

G(ACT)

10

7.5

5.0

2.5

0

GATE-SOURCE VOLTAGE (V)

GS,

V

FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260

3-36

RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

Typical Performance Curves

300

100

10

AVALANCHE CURRENT (A)

AS,

I

1

FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING

Test Circuits and Waveforms

BV

DSS

t

P

I

AS

(Continued)

STARTING TJ = +25oC

STARTING TJ = +150oC

If R = 0
t

= (L) (IAS) / (1.3 RATED BV

AV

If R ≠ 0
t

= (L/R) ln [(IAS*R) / (1.3 RATED BV

AV

0.01 0.1 1 10
TIME IN AVALANCHE (ms)

t

AV,

V

DS

V

DD

- VDD)

DSS

- VDD) + 1]

DSS

TO OBTAIN

VARY t

P

REQUIRED PEAK I

V

GS

R

AS

V

DS

L

G

DUT

+

V

DD

-

t

t

AV

0V

P

I

L

FIGURE 14. UNCLAMPED ENERGY WAVEFORMS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

t

ON

t

D(ON)

t

V

DS

90%

R

10%

V

GS

PULSE WIDTH

10%

t

D(OFF)

90%

t

OFF

50%50%

t

F

10%

90%

0V

V

DD

V

GS

R

GS

FIGURE 16. RESISTIVE SWITCHING WAVEFORMS FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT

0.01Ω

R

L

V

DUT

DS

3-37

RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

Temperature Compensated PSPICE Model for the
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

.SUBCKT RFP45N06213
REV 1/18/93

*NOM TEMP = +25

o

C

CA 12 8 3.49E-9
CB 15 14 3.8E-9
CIN 6 8 2E-9

DBODY 7 5 DBDMOD
DBREAK 5 11DBKMOD
DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 66.5
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1

IT 8 17 1

LDRAIN 2 5 1E-9
LGATE 1 9 5.65E-9
LSOURCE 3 7 4.13E-9

MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01

RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 3.58E-3
RGATE 9 20 0.681
RIN 6 8 1E9
RSOURCE 8 7 RDSMOD 13.6E-3
RVTO 18 19 RVTOMOD 1

GATE

1

LGATE

RGATE

ESG

EVTO
+

209

S1A S2A

12

10

-

+

-

18

8

13

8

DPLCAP

6
8

+

-

VTO

-

6

RIN CIN

15

14
13

S2BS1B
13

6

EDSEGS

8

5

RDRAIN

16
+

21

MOS1

CBCA

14

+

5
8

-

8

DBREAK

MOS2

EBREAK

RSOURCE

11

+

17
18

-

RBREAK

7

DRAIN

LDRAIN

DBODY

LSOURCE

SOURCE

1817

RVTO

19IT

-

VBAT

+

2

3

S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD

VBAT 8 19 DC 1
VTO 21 6 0.92

.MODEL DBDMOD D (IS=8.2E-13 RS=7.86E-3 TRS1=2.26E-3 TRS2=2.90E-6 CJO=2.07E-9 TT=5.72E-8)
.MODEL DBKMOD D (RS=1.93E-1 TRS1=5.13E-4 TRS2=-2.15E-5)
.MODEL DPLCAPMOD D (CJO=1.25E-9 IS=1E-30 N=10)
.MODEL MOSMOD NMOS (VTO=3.862 KP=55.57 IS=1E-30 N=10 TOX=1 L=1U W=1U)
.MODEL RBKMOD RES (TC1=1.12E-3 TC2=-5.18E-7)
.MODEL RDSMOD RES (TC1=4.64E-3 TC2=1.58E-5)
.MODEL RVTOMOD RES (TC1=-4.27E-3 TC2=-6.55E-6)
.MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-6.5 VOFF=-1.7)
.MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.7 VOFF=-6.5)
.MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3.0 VOFF=2)
.MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=2.0 VOFF=-3.0)

.ENDS

NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; authors, William J. Hepp and C. Frank Wheatley.

3-38