Datasheet RF1S30P06SM, RFG30P06, RFP30P06 Datasheet (Intersil)

RFG30P06, RFP30P06, RF1S30P06SM

Data Sheet July 1999

30A, 60V, 0.065 Ohm, P-Channel Power
MOSFETs

These are P-Channel power MOSFETs manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They are designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.

Formerly developmental type TA09834.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG30P06 TO-247 RFG30P06
RFP30P06 TO-220AB RFP30P06
RF1S30P06SM TO-263AB F1S30P06

NOTE: Whenordering, use the entire part number.Addthesuffix9A
to obtain the TO-263ABvariant in tape andreel, i.e. RF1S30P06SM9A.

File Number

Features

• 30A, 60V

DS(ON)

= 0.065Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2437.3

Packaging

DRAIN

(BOTTOM

SIDE METAL)

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

JEDEC TO-263AB

GATE

SOURCE

(FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

DRAIN

GATE

4-133

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFG30P06, RFP30P06, RF1S30P06SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFG30P06, RFP30P06

RF1S30P06SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating (Figure 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Linear Deratlng Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

-60 V

-60 V

±20 V

30

Refer to UIS Curve

135

0.9

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)
g(TOT)

Gate Charge at -10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

DSS

DSS

GSS

(ON)

r

f

g(-10)
g(TH)

ISS
OSS
RSS

θJC
θJA

ID = 250µA, VGS = 0V -60 - - V
VGS = VDS, ID = 250µA -2 - -4 V
VDS = -60V, VGS = 0V - - -1 µA
VDS = 0.8 x Rated BV

, TC = 150oC - - -25 µA

DSS

VGS = ±20V - - ±100 nA
ID = -30A, VGS = -10V (Figure 9) - - 0.065 Ω
VDD = -30V, ID = 15A, RL = 2.00Ω, VGS = -10V

RG = 6.25Ω
(Figure 13)

- - 80 ns

-15-ns

-23-ns

-28-ns

-18-ns

- - 100 ns
VGS = 0 to -20V VDD = -48V, ID = 30A,
VGS = 0 to -10V - 70 85 nC
VGS = 0 to -2V - 5.5 6.6 nC

RL = 1.6Ω,
I

= 1.6mA

G(REF)

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)

- 140 170 nC

- 3200 - pF

- 800 - pF

- 175 - pF

- - 1.11oC/W
TO-220, TO-263 - - 62oC/W
TO-247 30oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX MAX

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

RR

NOTE:

2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4-134

ISD = -30A - - -1.5 V
ISD = -30A, dISD/dt = -100A/µs - - 150 ns

RFG30P06, RFP30P06, RF1S30P06SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100 125 150 1750

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

1

-40

-30

-20

, DRAIN CURRENT (A)

D

-10

I

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.5

0.2

0.1

0.1

, NORMALIZED

θJC

Z

-200

-100

-10

, DRAIN CURRENT (A)

D

I

-1

-1

0.05

THERMAL IMPEDANCE

0.02

0.01

0.01

-5

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

V

SINGLE PULSE

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

TC = 25oC
TJ = MAX RATED

-10

, DRAIN TO SOURCE VOLTAGE (V)

DS

-3

10

t, RECTANGULAR PULSE DURATION (s)

100µs

1ms

10ms

100ms

DC

-100

-2

10

-500

-100

, PEAK CURRENT (A)

DM

I

-10
10

-1

10

VGS = -20V

VGS = -10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-5

-4

10

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

II

=

-3

10

t, PULSE WIDTH (s)

-2

10

1/t2

x R

θJC

θJC

0

10

175 T

–




25



--------------------- -

150

-1

10

C

+ T

C

10

TC = 25oC

0

10

1

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-135

RFG30P06, RFP30P06, RF1S30P06SM

Typical Performance Curves

-100

STARTING TJ = 25oC

-10
STARTING TJ = 150oC

If R = 0

, AVALANCHE CURRENT (A)

tAV = (L) (IAS) / (1.3 RATED BV

AS

I

If R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BV

-1

0.1 1 10 100
, TIME IN AVALANCHE (ms)

t

AV

DSS

Unless Otherwise Specified (Continued)

- VDD)

- VDD) + 1]

DSS

NOTE: Refer to Intersil Application Notes AN9321 and AN9322,

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

-75

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VDD = -15V

-60
25oC

175oC

-8

-10

-45

-30

-15

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

0

I

0

-2
VGS, GATE TO SOURCE VOLTAGE (V)

-55oC

-4

-6

-75

-60

-45

-30

DRAIN CURRENT (A)

D,

I

-15

0

0-2-4-6-8-10

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -20V

VGS = -10V

VGS = -8V

VGS = -7V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T

= 25oC

C

VGS = -6V

VGS = -5V

VGS = -4.5V

FIGURE 7. SATURATION CHARACTERISTICS

2

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= -10V, ID = 30A

V

GS

1.5

1

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-40 0 40 80 120 160 200

-80
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

2

VGS = VDS, ID = 250µA

1.5

1

NORMALIZED GATE

0.5

THRESHOLD VOLTAGE

0

-80 -40 0 40 80
TJ, JUNCTION TEMPERATURE (oC)

160120 200

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

4-136

RESISTANCE vs JUNCTION TEMPERATURE

2

ID = 250µA

1.5

1

0.5

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 11. NORMALIZED DRAIN TOSOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

RFG30P06, RFP30P06, RF1S30P06SM

Typical Performance Curves

Unless Otherwise Specified (Continued)

4000

C

ISS

3000

VGS = 0V, f = 1MHz

2000

1000

C, CAPACITANCE (pF)

0

0

ISS

C

= C

RSS

C

≈ C

C

OSS

C

RSS

OSS

-5 -10 -15 -20 -25

GD

DS

+ C

GD

GS

C

= CGS + C

VDS, DRAIN TO SOURCE VOLTAGE(V)

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Test Circuits and Waveforms

V

DS

L

-60

-45

-30

-15

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

GATE

VDD = BV

DSS

SOURCE

VOLTAGE

VDD = BV

DSS

RL = 2.0Ω

I

= -1.6mA

G(REF)

VGS = -10V

0.75 BV

DSS

0.50 BV

DSS

0.25 BV

DSS

DRAIN SOURCE VOLTAGE

0

20

I

G(REF)

I

G(ACT)

t, TIME (µs)

80

I

G(REF)

I

G(ACT)

-10

-7.5

-5

-2.5

0

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

t

AV

0

, GATE TO SOURCE VOLTAGE (V)

GS

V

VARY t

TO OBTAIN

P

REQUIRED PEAK I

0V
V

GS

t

P

AS

R

G

DUT

I

AS

0.01Ω

-

V

DD

+

V

DD

I

AS

t

P

BV

DSS

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

t

ON

t

d(ON)

10%

50%

t

r

90%

10%

V

DS

R

L

V

GS

-

V

DD

V

GS

R

GS

DUT

+

0

V

DS

V

GS

0

PULSE WIDTH

t

d(OFF)

V

DS

t

90%

OFF

90%

50%

t

f

10%

FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

4-137

RFG30P06, RFP30P06, RF1S30P06SM

Test Circuits and Waveforms

V

DS

V

GS

I

g(REF)

FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS

(Continued)

R

L

DUT

V

Q

GS

g(TH)

Q

g(-10)

Q

g(TOT)

0

VGS= -2V

­V

DD

+

V

0

I

g(REF)

-V

DD

DS

VGS= -10V

VGS= -20V

4-138

PSPICE Electrical Model

.SUBCKT RFP30P06 2 1 3;
REV 8/21/94

RFG30P06, RFP30P06, RF1S30P06SM

CA 12 8 3.23e-9
CB 15 14 3.23e-9
CIN 6 8 3.08e-9

DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD

EBREAK 5 11 17 18 -77.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1

IT 8 17 1

LDRAIN 2 5 1e-9
LGATE 1 9 4.92e-9
LSOURCE 3 7 4.60e-9

MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01

RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 39.85e-3
RGATE 9 20 2.34
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 2.56e-3
RVTO 18 19 RVTOMOD 1

GATE

1

9

LGATE RGATE

DPLCAP

EVTO

20

+

S1A

12

S1B

CA

18

8

EGS

10

-

RIN

13814

+

ESG

+

-

VTO

-

6

S2A

15

13

S2B

13

6

EDS

8

5

8
6

RSCL1RSCL2

+

CIN

CB

51

+

5

ESCL

51

50
RDRAIN

16

21

MOS1

14

+

6
8

--

8

EBREAK

MOS2

DBREAK

RSOURCE

11

17

+
17
18

-

RBREAK

IT

7

DRAIN

LDRAIN

DBODY

LSOURCE

SOURCE

18

RVTO

19

VBAT

+

2

3

S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD

VBAT 8 19 DC 1
VTO 21 6 -0.81

ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/114,5))}

.MODEL DBDMOD D (IS=4.7e-13 RS=1.31e-2 TRS1=1.39e-4 TRS2=-4.77e-6 CJO=2.85e-9 TT=8.81e-8)
.MODEL DBKMOD D (RS=2.23e-1 TRS1=1.97e-3 TRS2=-2.37e-5)
.MODEL DPLCAPMOD D (CJO=0.78e-9 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.75 KP=10.83 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=9.08e-4 TC2=-1.72e-6)
.MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.02e-5)
.MODEL RSCLMOD RES (TC1=2.09e-3 TC2=5.88e-7)
.MODEL RVTOMOD RES (TC1=-2.99e-3 TC2=1.40e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.4 VOFF=1.4)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.4 VOFF=3.4)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.2 VOFF=-3.8)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.8 VOFF=1.2)

.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the PowerMOSFET Featuring Global Temperature

Options; authors, William J. Hepp and C. Frank Wheatley.

4-139

RFG30P06, RFP30P06, RF1S30P06SM

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only .Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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4-140

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