Datasheet RF1S30N06LESM Datasheet (Intersil)

RFP30N06LE, RF1S30N06LESM

/
j

/

/

[ /Title
(RFP3
0N06L
E,
RF1S3
0N06L
ESM)

Sub-

ect
(30A,
60V,
ESD
Rated,

0.047
Ohm,
Logic
Level
N­Chan­nel
Power
MOS­FETs)

Autho
r ()

Key­words
(Inter­sil
Corpo­ration,
ESD
Rated,

0.047
Ohm,
Logic
Level
N­Chan-

Data Sheet April 1999 File Number

30A, 60V, ESD Rated, 0.047 Ohm, Logic
Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.

These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.

Formerly developmental type TA49027.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP30N06LE TO-220AB F30N06LE
RF1S30N06LESM TO-263AB 1S30N06L

NOTE: Whenordering usethe entire part number.Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.

Packaging

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

Features

• 30A, 60V

•r

• 2kV ESD Protected

• Temperature Compensating PSPICE™ Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.047Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

DRAIN

GATE

SOURCE

(FLANGE)

3629.2

6-260

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFP30N06LE, RF1S30N06LESM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

RFP30N06LE, RF1S30N06LESM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrostatic Discharge Rating, MIL-STD-883, Category B(2). . . . . . . . . . . . . . . .ESD 2 kV

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V

+10, -8 V

30

Refer to UIS Curve

96

0.645

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V, Figure 11 60 - - V

= VDS, ID = 250µA, Figure 10 1 - 2 V
VDS = Rated B
VDS = 0.8 x Rated B

, VGS = 0 - - 25 µA

VDSS

, VGS = 0, TC = 150oC - - 250 µA

VDSS

VGS = +10, -8V - - ±10 µA

= 30A, VGS = 5V, Figure 9 - - 0.047 Ω

VDD = 30V, ID = 30A, RL = 1Ω, VGS = 5V,
RGS = 2.5Ω,
Figures 13, 16, 17

- - 140 ns

-11-ns

-88-ns

-30-ns

-40-ns

- - 100 ns

= 0V to 10V VDD = 48V,
VGS = 0V to 5V - 28 34 nC
VGS = 0V to 1V - 1.8 2.6 nC

ID = 30A,
RL = 1.6Ω
Figures 18, 19

VDS = 25V, VGS = 0V,
f = 1MHz
Figure 12

-5162nC

- 1350 - pF

- 290 - pF

-85-pF

- - 1.55oC/W

--80oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V

SD

Diode Reverse Recovery Time t

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

6-261

ISD = 30A - - 1.5 V
ISD = 30A, dISD/dt = 100A/µs - - 125 ns

rr

RFP30N06LE, RF1S30N06LESM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

0.5

150

175

40

30

20

, DRAIN CURRENT (A)

10

D

I

0

25 50 75 100

TC, CASE TEMPERATURE (oC)

125 150

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

175

0.2

0.1

0.1

THERMAL IMPEDANCE

0.01

0.05

0.02

0.01
SINGLE PULSE

-5

10

-4

10

-3

10

, NORMALIZED

JC

θ

Z

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

200

100

10

, DRAIN CURRENT (A)
I

D

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1 10 100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25oC

= MAX RATED

T

J

-2

10

t, RECTANGULAR PULSE DURATION (s)

500

100ms

1ms

10ms

100ms

DC

VGS = 10V

100

, PEAK CURRENT CAPABILITY (A)

DM

I

20

-6

10

VGS = 5V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

-5

10

-4

10

10-310

t, PULSE WIDTH (s)

1/t2

x R

JC

θ

0

10

o

C DERATE PEAK

175 Tc–



II

=

---------------------- -



25



-2

+ T

JC

C

θ

1

10

150

TC = 25oC

10-110010

1

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

6-262

FIGURE 5. PEAK CURRENT CAPABILITY

RFP30N06LE, RF1S30N06LESM

Typical Performance Curves

100

10

If R = 0

, AVALANCHE CURRENT (A)

tAV = (L)(IAS)/(1.3*RATED BV

AS

If R ≠ 0

I

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

1

0.01

0.1

tAV, TIME IN AVALANCHE (ms)

DSS

Unless Otherwise Specified (Continued)

STARTING T

STARTING TJ = 150oC

- VDD)

DSS

= 25oC

J

- VDD) +1]

110

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

100

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.

80

o

25

60

40

-55oC

C

175oC

100

TC = 25oC

80

60

40

, DRAIN CURRENT (A)

D

20

I

0

0 1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 10V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.

3.0

4.5

FIGURE 7. SATURATION CHARACTERISTICS

3.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.

2.5

2.0

1.5

1.0

ON RESISTANCE

= 5V, ID = 30A

V

GS

VGS = 5V

V

= 4.5V

GS

= 4V

V

GS

VGS = 3V

6.0 7.5

20

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

0

0

V

GS

3.0

, GATE TO SOURCE VOLTAGE (V)

4.5

VDD = 15V

6.0

FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

2.0
VGS= VDS, ID = 250µA

1.5

1.0

NORMALIZED GATE

0.5

THRESHOLD VOLTAGE

0

-80

-40

04080

TJ, JUNCTION TEMPERATURE (oC)

160

120 200

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE

0.5

NORMALIZED DRAIN TO SOURCE

0

7.51.5

-80 -40

04080

TJ, JUNCTION TEMPERATURE (oC)

120

160

200

RESISTANCE vs JUNCTION TEMPERATURE

2.0
ID = 250µA

1.5

1.0

0.5

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

6-263

RFP30N06LE, RF1S30N06LESM

Typical Performance Curves

Unless Otherwise Specified (Continued)

2000

C

1500

ISS

VGS = 0V, f = 1MHz

1000

500

C, CAPACITANCE (pF)

0

0

ISS

C

= C

RSS

C

≈ CDS + C

C

OSS

C

RSS

5

10 15 20 25

OSS

GD

GD

GD

C

= CGS + C

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Test Circuits and Waveforms

V

DS

L

VARY tP TO OBTAIN
REQUIRED PEAK I

V

GS

AS

R

G

DUT

60

45

30

15

, DRAIN TO SOURCE VOLTAGE (V)

DS

0

V

VDD = BV

I

20

I

DSS

0.75 BV

0.50 BV

0.25 BV

G(REF)
G(ACT)

DSS
DSS
DSS

RL = 2.0Ω
I

= 0.62mA

G(REF)

= 5V

V

GS

t, TIME (s)

0.75 BV

0.50 BV

0.25 BV

VDD = BV

DSS
DSS
DSS

I

G(REF)

80

I

G(ACT)

DSS

5.0

3.75

2.5

1.25

0

, GATE TO SOURCE VOLTAGE (V)

GS

V

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

BV

DSS

t

P

I

+

V

DD

-

AS

V

DS

V

DD

0V

P

I

AS

0.01Ω

0

t

AV

t

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

t

ON

t

d(ON)

90%

10%

t

r

R

L

V

DS

V

GS

V

GS

+

-

V

DS

0

0V

R

GS

DUT

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

t

d(OFF)

90%

t

OFF

50%

t

f

10%

90%

6-264

RFP30N06LE, RF1S30N06LESM

Test Circuits and Waveforms

V

DS

V

GS

I

G(REF)

FIGURE 18. GATE CHARGE TEST CIRCUIT

(Continued)

R

L

DUT

V

DD

+

V

DD

­VGS= 1V

0

I

G(REF)

0

V

GS

Q

Q

g(TH)

V

g(5)

DS

Q

g(TOT)

VGS= 10V

VGS= 5V

FIGURE 19. GATE CHARGE WAVEFORMS

6-265

PSPICE Electrical Model

SUBCKT RFP30N06LE 2 1 3; rev 6/2/93
CA 12 8 1 3.34e-9
CB 15 14 3.44e-9
CIN 6 8 0 1.343e-9

DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 75.39
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1

IT 8 17 1

LDRAIN 2 5 1e-9
LGATE 1 9 7.22e-9
LSOURCE 3 7 6.31e-9

MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01

RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 11.86e-3
RGATE 9 20 2.52
RIN 6 8 1e9
RSCL1 5 51 RSLVCMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 26.6e-3
RVTO 18 19 RVTOMOD 1

RFP30N06LE, RF1S30N06LESM

DPLCAP

10

-

6

ESG

8

GATE

1

9

LGATE RGATE

DESD1

91

DESD2

+

EVTO

20

+

18

8

S1A

12

S1B

CA

-

13814

EGS

6

RIN

S2A

13

S2B

13

+

6
8

-

VTO

15

EDS

16

+

CIN

CB

+

--

5

5

51

14

5
8

RSCL1RSCL2

51

+

ESCL

50
RDRAIN

21

MOS1

8

DBREAK

EBREAK

MOS2

RSOURCE

11

17

+

17
18

-

7

RBREAK

IT

LDRAIN

DBODY

LSOURCE

SOURCE

18

RVTO

19

VBAT

+

DRAIN

2

3

S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD

VBAT 8 19 DC 1
VTO 21 6 0.5

ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/89,7))

.MODEL DBDMOD D (IS = 3.80e-13 RS = 1.12e-2 TRS1 = 1.61e-3 TRS2 = 6.08e-6 CJO = 1.05e-9 TT = 3.84e-8)
.MODEL DBKMOD D (RS = 1.82e-1 TRS1 = 7.50e-3 TRS2 = -4.0e-5)
.MODEL DESD1MOD D (BV = 13.54 TBV1 = 0 TBV2 = 0 RS = 45.5 TRS1 = 0 TRS2 = 0)
.MODEL DESD2MOD D (BV = 11.46 TBV1 = -7.576e-4 TBV2 = -3.0e-6 RS = 0 TRS1 = 0 TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 0.591e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 1.94 KP = 139.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -3.03e-7)
.MODEL RDSMOD RES (TC1 = 5.38e-3 TC2 = 1.64e-5)
.MODEL RSLVCMOD RES (TC1 = 1.75e-3 TC2 = 3.90e-6)
.MODEL RVTOMOD RES (TC1 = -2.15e-3 TC2 = -5.43e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.05 VOFF = -1.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF = -4.05)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.2 VOFF = 2.8)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.8 VOFF = -2.2)

.ENDS

NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records 1991.

6-266

RFP30N06LE, RF1S30N06LESM

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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6-267

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