Datasheet RF1S30N06LE Datasheet (Fairchild Semiconductor)

July 1995

RFP30N06LE, RF1S30N06LE,

SEMICONDUCTOR

RF1S30N06LESM

30A, 60V, ESD Rated, Avalanche Rated, Logic Level

N-Channel Enhancement-Mode Power MOSFETs

Features

• 30A, 60V

DS(ON)

= 0.047Ω

•r

• 2kV ESD Protected

Temperature Compensating

•

PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Description

The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD.

PACKAGE AVAILABILITY

PART NUMBER PACKAGE BRAND

RFP30N06LE TO-220AB F30N06LE RF1S30N06LE TO-262AA 1S30N06L RF1S30N06LESM TO-263AB 1S30N06L

NOTE: When ordering use the entire part number. Add sufﬁx, 9A, to obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.

Formerly developmental type TA49027.

Packages

DRAIN

(FLANGE)

DRAIN

(FLANGE)

Symbol

GATE SOURCE

G

JEDEC TO-220AB

JEDEC TO-262AA

A

JEDEC TO-263AB

A

M

A

D

S

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

Absolute Maximum Ratings T

Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain Current

RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation

TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . ESD 2 kV

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

= +25oC

C

STG

DSS

DGR

GS

DM

AS

, T

RFP30N06LE, RF1S30N06LE,

RF1S30N06LESM UNITS

60 V 60 V

+10, -8 V

D

Refer to Peak Current Curve

D

J L

30

Refer to UIS Curve

96

0.645

-55 to +175 260

File Number

5-45

A

W

W/oC

o

C

o

C

3629.1

Speciﬁcations RFP30N06LE, RF1S30N06LE, RF1S30N06LESM

Electrical Speciﬁcations T

= +25oC, Unless Otherwise Speciﬁed

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain-Source Breakdown Voltage BV Gate Threshold Voltage V Zero Gate Voltage Drain Current I

Gate-Source Leakage Current I On Resistance r Turn-On Time t Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Turn-Off Time t Total Gate Charge Q Gate Charge at 5V Q Threshold Gate Charge Q Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction to Case R Thermal Resistance Junction to Ambient R

DSSID

GS(TH)VGS

DSS

VDS = 60V, VGS = 0V

GSS

DS(ON)ID

ON

VGS = +10, -8V - - 10 µA

VDD = 30V, ID = 30A, RL = 1Ω, VGS = 5V,

D(ON)

D(OFF)

OFF

G(TOT)VGS

G(5)

G(TH)

ISS

RGS = 2.5Ω

R

F

VGS = 0V to 5V - 28 34 nC VGS = 0V to 1V - 1.8 2.6 nC VDS = 25V, VGS = 0V,

f = 1MHz

OSS

RSS

θJC

θJA

= 250µA, VGS = 0V 60 - - V

= VDS, ID = 250µA1-2V

TC = +25oC--1µA T

= +150oC--50µA

C

= 30A, VGS = 5V - - 0.047 Ω

- - 140 ns

-11-ns

-88-ns

-30-ns

-40-ns

- - 100 ns

= 0V to 10V VDD = 48V,

-5162nC ID = 30A, RL = 1.6Ω

- 1350 - pF

- 290 - pF

-85-pF

- - 1.55

--80

o

C/W

o

C/W

Source-Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V Reverse Recovery Time t

RR

SD

ISD = 30A - - 1.5 V ISD = 30A, dISD/dt = 100A/µs - - 125 ns

5-46

RFP30N06LE, RF1S30N06LE, RF1S30N06LESM

Typical Performance Curves

200 100

= +25oC

T

C

100µs

10

1

DUTY CYCLE

0.5

0.2

0.1

0.05

0.02

0.01

P

DM

NOTES: DUTY FACTOR: D = t PEAK TJ = PDM x Z

-2

10

-1

10

, DRAIN CURRENT(A)

D

I

10

OPERATION IN THIS AREA MAY BE LIMITED BY r

1

DS(ON)

V

MAX = 60V

DSS

10

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

1ms

10ms

100ms

DC

100

, NORMALIZED

0.1

JC

θ

Z

THERMAL RESPONSE

SINGLE PULSE

0.01

-5

10

t, RECTANGULAR PULSE DURATION (s)

-4

-3

10

FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL

IMPEDANCE

40

30

20

, DRAIN CURRENT (A)

10

D

I

0

25 50 75 100

TC, CASE TEMPERATURE (oC)

125 150

175

500

VGS = 10V

100

, PEAK CURRENT CAPABILITY (A)

DM

I

20

-6

10

VGS = 5V

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

-5

10

-4

10

t, PULSE WIDTH (s)

FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

II

-3

10

175 Tc–

 

=

---------------------- -

25



-2

10

10-110

t

150

1

t

2

θ

1/t2

+ T

JC

C

0

10

TC = +25oC

0

1

10

1

10

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

FIGURE 4. PEAK CURRENT CAPABILITY

TEMPERATURE

100

80

60

40

, DRAIN CURRENT (A)

D

20

I

0

0 1.5

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

PULSE DURATION = 250µs,

= 10V

V

GS

3.0

4.5

TC = +25oC

VGS = 5V

= 4.5V

V

GS

= 4V

V

GS

VGS = 3V

6.0 7.5

100

PULSE TEST PULSE DURATION = 250µs

80

DUTY CYCLE = 0.5% MAX

60

40

20

, ON STATE DRAIN CURRENT (A)

D(ON)

I

0

0.0 V

GS

3.0

-55

o

C

4.5

+25

o

C

, GATE-TO-SOURCE VOLTAGE (V)

6.0

FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS

5-47

V

DD

+175oC

= 15V

7.51.5

RFP30N06LE, RF1S30N06LE, RF1S30N06LESM

Typical Performance Curves

3.0

2.5

2.0

1.5

, NORMALIZED

1.0

DS(ON)

r

0.5

0.0

-80 -40

FIGURE 7. NORMALIZED r

2.0

1.5

PULSE DURATION = 250µs, V

04080

TJ, JUNCTION TEMPERATURE (oC)

vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs

DS(ON)

(Continued)

= 5V, ID = 30A

GS

160

120

ID = 250µA

200

, NORMALIZED GATE

THRESHOLD VOLTAGE

GS(TH)

V

1.0

1.5

0.0

1.2

0.8

2.0

1.0

0.5

-80

-40

04080

TJ, JUNCTION TEMPERATURE (oC)

TEMPERATURE

VGS= VDS, ID = 250µA

160

120 200

1.0

, NORMALIZED

DSS

0.5

BV

0.0

-80 -40 0 40 80 120 160 200

DRAIN-TO-SOURCE BREAKDOWN VOLTAGE

TJ, JUNCTION TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN

VOLTAGE vs TEMPERATURE

2000

1500

1000

500

C, CAPACITANCE (pF)

0

C

ISS

C

OSS

C

RSS

5

10 15 20 25

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0 25 50 75 100

0

125

FIGURE 10. NORMALIZED POWER DISSIPATION vs

TEMPERATURE DERATING CURVE

60

45

30

15

, DRAIN SOURCE VOLTAGE (V)

DS

V

0

VDD = BV

20

DSS

I

G(REF)

I

G(ACT)

0.75 BV

0.50 BV

0.25 BV RL = 2.0Ω

I

G(REF)

V

DSS DSS DSS

= 0.62mA

= 5V

GS

t, TIME (s)

0.75 BV

0.50 BV

0.25 BV

VDD = BV

DSS DSS DSS

I

G(REF)

80

I

G(ACT)

DSS

150

5.00

3.75

2.50

1.25

0.00

175

, GATE SOURCE VOLTAGE (V)

GS

V

FIGURE 11. TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE

VOLTAGE

FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT. REFER TO HARRIS APPLICATION NOTES AN7254 AND AN7260

5-48

RFP30N06LE, RF1S30N06LE, RF1S30N06LESM

Typical Performance Curves

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01

FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING

Test Circuits and Waveforms

TO OBTAIN

VARY t

P

REQUIRED PEAK I

V

GS

AS

R

G

(Continued)

If R = 0 tAV = (L)(IAS)/(1.3*RATED BV

If R ≠0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

0.1

tAV, TIME IN AVALANCHE (ms)

V

DS

L

+

V

DD

-

STARTING T STARTING TJ = +150oC

- VDD)

DSS

- VDD) +1]

DSS

110

= +25oC

J

BV

DSS

t

P

I

AS

V

DS

V

DD

DUT

I

L

0.01Ω

t

AV

0V

t

P

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

0V

V

DD

R

L

V

DS

V

GS

R

GS

DUT

DS

V

GS

10%

t

D(ON)

90%

t

ON

50%

t

10%

R

PULSE WIDTH

t

D(OFF)

90%

t

OFF

50%

FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

t

F

90%

10%

5-49

RFP30N06LE, RF1S30N06LE, RF1S30N06LESM

Temperature Compensated PSPICE Model for the RFP30N06LE, RF1S30N06LE, RF1S30N06LESM

SUBCKT RFP30N06LE 2 1 3; rev 6/2/93 CA 12 8 1 3.34e-9 CB 15 14 3.44e-9 CIN 6 8 0 1.343e-9

DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DESD1 91 9 DESD1MOD DESD2 91 7 DESD2MOD DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 75.39 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1

IT 8 17 1

LDRAIN 2 5 1e-9 LGATE 1 9 7.22e-9 LSOURCE 3 7 6.31e-9

MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01

RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 11.86e-3 RGATE 9 20 2.52 RIN 6 8 1e9 RSCL1 5 51 RSLVCMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 26.6e-3 RVTO 18 19 RVTOMOD 1

GATE

1

9

LGATE RGATE

DESD1

91

DESD2

ESG

EVTO

20

+

18

8

S1A

12

S1B

CA

10

-

6 8

+

-

13814

EGS

DPLCAP

6

RIN

13

+

6 8

S2A

S2B

-

VTO

15

EDS

+

CIN

CB

5

LDRAIN

RSCL1RSCL2

51

+

5

ESCL

51

50

RDRAIN

16

21

MOS1

14

+

5 8

--

8

DBREAK

EBREAK

MOS2

RSOURCE

11

17

+

17 18

-

7

RBREAK

IT

DBODY

LSOURCE

DRAIN

SOURCE

18

RVTO

19

VBAT

+

2

3

S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD

VBAT 8 19 DC 1 VTO 21 6 0.5

ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/89,7))

.MODEL DBDMOD D (IS = 3.80e-13 RS = 1.12e-2 TRS1 = 1.61e-3 TRS2 = 6.08e-6 CJO = 1.05e-9 TT = 3.84e-8) .MODEL DBKMOD D (RS = 1.82e-1 TRS1 = 7.50e-3 TRS2 = -4.0e-5) .MODEL DESD1MOD D (BV = 13.54 TBV1 = 0 TBV2 = 0 RS = 45.5 TRS1 = 0 TRS2 = 0) .MODEL DESD2MOD D (BV = 11.46 TBV1 = -7.576e-4 TBV2 = -3.0e-6 RS = 0 TRS1 = 0 TRS2 = 0) .MODEL DPLCAPMOD D (CJO = 0.591e-9 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 1.94 KP = 139.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -3.03e-7) .MODEL RDSMOD RES (TC1 = 5.38e-3 TC2 = 1.64e-5) .MODEL RSLVCMOD RES (TC1 = 1.75e-3 TC2 = 3.90e-6) .MODEL RVTOMOD RES (TC1 = -2.15e-3 TC2 = -5.43e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.05 VOFF = -1.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF = -4.05) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.2 VOFF = 2.8) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.8 VOFF = -2.2)

.ENDS

NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records 1991.

5-50