Datasheet RF1S25N06 Datasheet (Fairchild Semiconductor)

G

D

S

DRAIN

(FLANGE)

GATE

SOURCE

RFP25N06, RF1S25N06, RF1S25N06SM

Data Sheet January 2002

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA09771.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP25N06 TO-220AB RFP25N06

RF1S25N06 TO-262AA F1S25N06

RF1S25N06SM TO-263AB F1S25N06

NOTE: When ordering use the entire part number. Add the sufﬁx, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A.

Features

• 25A, 60V

DS(ON)

= 0.047 Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

• 175

C Operating Temperature

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

Packaging

DRAIN

(FLANGE)

JEDEC TO- 220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

JEDEC TO-262AA

SOURCE

DRAIN

(FLANGE)

GATE

RFP25N06, RF1S25N06, RF1S25N06SM Rev. C

±

µ

= ±

±

Ω

θ

RFP25N06, RF1S25N06, RF1S25N06SMS

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Speciﬁed

C

RFP25N06,

RF1S25N06, RF1S25N06SM UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (R

= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T

DSS

DGR

GS

D

DM

AS

D

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

L

pkg

60 V

20 V

25

(Figure 5)

(Figure 6)

72

0.48

-55 to 175

300 260

W/

A

W

o

C

o

C

o

C

o

C

NOTE:

J

= 25

o

C to 150

1. T

Electrical Speciﬁcations

o

C.

o

T

= 25

C, Unless Otherwise Speciﬁed

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate to Source Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance r

DS(ON)

Turn-On Time t

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Turn-Off Time t

Total Gate Charge Q

g(TOT)

Gate Charge at 10V Q

Threshold Gate Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

DSS

GSS

OFF

g(10)

g(TH)

OSS

RSS

I

DSS

ON

r

= 250 µ A, V

D

V

= V

GS

DS

V

= 60V T

DS

V

= 0V T

GS

V

I

V R R

20V - -

GS

= 25A, V

D

= 30V, I

DD

= 2.4 Ω , V

L

= 10 Ω

GS

(Figure 13)

= 0V (Figure 11) 60 - - V

GS

, I

= 250 µ A (Figure 10) 2 - 4 V

D

o

= 25

C--1

C

o

= 150

C

= 10V (Figure 9) - - 0.047

GS

= 12.5A

D

= 10V

GS

C--50

- - 60 ns

-14-ns

-30-ns

-45-ns

f

-22-ns

- - 100 ns

V

ISS

= 0 to 20V V

GS

V

= 0 to 10V - - 45 nC

GS

V

= 0 to 2V - - 3 nC

GS

V

= 25V, V

DS

GS

f = 1MHz (Figure 12)

DD

R

L

I

g(REF)

(Figure 13)

= 0V

= 48V, I

= 1.92 Ω

= 0.75mA

= 25A,

D

- - 80 nC

- 975 - pF

- 330 - pF

-95-pF

(Figure 3) - - 2.083

JC

JA

--62

100 nA

o

C/W

o

C/W

A

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t

SD

rr

I

= 25A - - 1.5 V

SD

I

= 25A, dI

SD

/dt = 100A/ µ s - - 125 ns

SD

5

0

25 50 75 100

125

150

20

I

D

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

175

25

30

15

10

t, PULSE WIDTH (s)

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

100

I

DM

, PEAK CURRENT (A)

200

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

VGS = 20V

FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS:

II

25

175 T

C

–

150

------------------------







=

VGS = 10V

TC = 25oC

RFP25N06, RF1S25N06, RF1S25N06SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

025

50

TC, CASE TEMPERATURE (oC)

75 100

Unless Otherwise Speciﬁed

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

1

0.5

150

175

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.2

0.1

, NORMALIZED

Z

200

100

10

, DRAIN CURRENT (A)

D

I

1

0.05

JC

0.02

θ

0.01

THERMAL IMPEDANCE

0.01

-5

10

OPERATION IN THIS AREA MAY BE LIMITED BY r

V

DS

SINGLE PULSE

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

TC = 25oC T

J

SINGLE PULSE

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

= MAX RATED

100µs

1ms

10ms

100ms

DC

100

-2

10

NOTES: DUTY FACTOR: D = t PEAK TJ = PDM x Z

-1

10

P

DM

t

1

t

2

1/t2

x R

C

J

θ

0

10

+ T

C

J

C

θ

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

0

10

30

0

2

468

40

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 6V

VGS = 7V

VGS = 20V

60

70

V

GS

= 8V

VGS = 10V

50

20

VGS = 4.5V

VGS = 5V

PULSE DURATION = 80µs

TC = 25oC

DUTY CYCLE = 0.5% MAX

0

0.5

1.0

1.5

2.0

-80 -40 0 40 80 120 160

NORMALIZED DRAIN TO SOURCE

TJ, JUNCTION TEMPERATURE (oC)

200

2.5

PULSE DURATION = 80µs

V

GS

= 10V, ID = 25A

ON RESISTANCE

DUTY CYCLE = 0.5% MAX

2.0

1.5

1.0

0.5

0

-80 -40 0 40 80 120 160

T

J

, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

200

ID = 250µA

RFP25N06, RF1S25N06, RF1S25N06SM

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

100

STARTING TJ = 25oC

10

STARTING TJ = 150oC

If R = 0

, AVALANCHE CURRENT (A)

tAV = (L)(IAS)/(1.3*RATED BV

AS

I

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

1

0.01

0.1

tAV, TIME IN AVALANCHE (µs)

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

DSS

- VDD)

DSS-VDD

) +1]

1

10

FIGURE 7. SATURATION CHARACTERISTICS

70

60

50

40

30

DRAIN CURRENT (A)

20

D,

I

10

= 15V

V

DD

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

0

0468102

VGS, GATE TO SOURCE VOLTAGE (V)

-55oC 25oC

175oC

FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2.0 VGS = V

DS

ID = 250µA

1.5

1.0

NORMALIZED GATE

0.5

THRESHOLD VOLTAGE

0

-80 -40 0 40 80 120

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

TJ, JUNCTION TEMPERATURE (oC)

JUNCTION TEMPERATURE

160

200

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

30

15

0

20

I

g REF()

I

g ACT()

--------------------

t, TIME (µs)

80

I

g REF()

I

g ACT()

--------------------

10

5.0

2.5

0

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

V

GS

, GATE TO SOURCE VOLTAGE (V)

60

7.5

45

V

DD

= BV

DSS

VDD = BV

DSS

0.75 BV

DSS

0.50 BV

DSS

0.25 BV

DSS

RL = 2.4Ω I

g(REF)

= 0.75mA

V

GS

= 10V

V

DD

V

DS

BV

DSS

t

P

I

AS

t

AV

0

t

ON

t

d(ON)

t

r

90%

10%

V

DS

90%

10%

t

f

t

d(OFF)

t

OFF

90%

50%

10%

PULSE WIDTH

V

GS

0

RFP25N06, RF1S25N06, RF1S25N06SM

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

1600

C

1200

800

400

C, CAPACITANCE (pF)

0

0 5 10 15 20 25

ISS

C

OSS

C

RSS

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

VGS = 0V, f = 1MHz

= CGS + C

C C C

ISS RSS OSS

= C = CDS + C

GD

FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Test Circuits and Waveforms

V

DS

L

GD

NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.

FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

t

0.01Ω

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

V

DS

R

DUT

L

+

V

DD

-

V

GS

V

GS

FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

R

GS

RFP25N06, RF1S25N06, RF1S25N06SM

Test Circuits and Waveforms (Continued)

V

DS

R

L

V

GS

DUT

I

g(REF)

FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORM

+

V

-

DD

V

DD

V

0

I

g(REF)

0

GS

V

GS

= 2V

Q

g(TH)

Q

V

DS

g(10)

Q

g(TOT)

VGS = 10V

V

= 20V

GS

RFP25N06, RF1S25N06, RF1S25N06SM

PSPICE Electrical Model

.SUBCKT RFP25N06 2 1 3 ; rev 8/19/94

CA 12 8 1.83e-9 CB 15 14 1.98e-9 CIN 6 8 9.7e-10

DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 65.9 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1

IT 8 17 1

LDRAIN 2 5 1e-9 LGATE 1 9 4.92e-9 LSOURCE 3 7 4.5e-9

MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01

RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 1.1e-3 RGATE 9 20 2.88 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 20.3e-3 RVTO 18 19 RVTOMOD 1

S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD

GATE

1

L

GATE

R

GATE

E

EVTO

+

209

S1A S2A

12

CA

10

DPLCAP

RSCL2

-

6

SG

8

+

6

-

18

8

RIN

14

13

8

S2BS1B 13

+

6

EGS EDS

8

-

VTO

15

CIN

CB

5

LDRAIN

RSCL1

51

+

5

51

50

RDRAIN

16

+

MOS1

14

+

5 8

-

ESCL

21

8

DBREAK

EBREAK

MOS2

RSOURCE

11

17

+

17 18

-

RBREAK

7

IT

DBODY

LSOURCE

18

RVTO

19

VBAT

+

DRAIN 2

3

SOURCE

VBAT 8 19 DC 1 VTO 21 6 0.764

ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/108,6))}

.MODEL DBDMOD D (IS = 2.32e-13 RS = 5.72e-3 TRS1 = 2.56e-3 TRS2 = -5.13e-6 CJO = 1.18e-9 TT = 5.62e-8) .MODEL DBKMOD D (RS = 2.00e-1 TRS1 = 3.33e-4 TRS2 = 2.68e-6) .MODEL DPLCAPMOD D (CJO = 6.55e-10 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 3.89 KP = 15.03 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 1.04e-3 TC2 = -1.04e-6) .MODEL RDSMOD RES (TC1 = 5.85e-3 TC2 = 1.77e-5) .MODEL RSCLMOD RES (TC1 = 2.0e-3 TC2 = 1.5e-6) .MODEL RVTOMOD RES (TC1 = -5.35e-3 TC2 = -3.77e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.04 VOFF= -3.04) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.04 VOFF= -5.04) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.02 VOFF= 1.98) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.98 VOFF= -3.02)

.ENDS

NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™

STAR*POWER is used under license

FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™



OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench



QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER

SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™



UltraFET

VCX™



DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4

Datasheet RF1S25N06 Datasheet (Fairchild Semiconductor)

Specifications and Main Features

Frequently Asked Questions

User Manual