Datasheet RF1S22N10SM, RFP22N10 Datasheet (Intersil)

RFP22N10, RF1S22N10SM

Data Sheet July 1999 File Number

22A, 100V, 0.080 Ohm, N-Channel Power
MOSFETs

These N-Channel power MOSFETs are manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relaydrivers. These transistors can be operated
directly from integrated circuits.

Formerly developmental type TA9845.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP22N10 TO-220AB RFP22N10
RF1S22N10SM TO-263AB F1S22N10

NOTE: When ordering use the entire part number. Add the suffix, 9A,
toobtaintheTO-263ABvariant in tape and reel, e.g. RF1S22N10SM9A.

Features

• 22A, 100V

•r

DS(ON)

= 0.080Ω

• UIS SOA Rating Curve (Single Pulse)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

2385.3

Packaging

DRAIN

(FLANGE)

G

S

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

4-499

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFP22N10, RF1S22N10SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP22N10,

RF1S22N10SMS UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

GS

D

DM

D

100 V
100 V
±20 V

22
50

100 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero-Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0 (Figure 7) 100 - - V

= VDS, ID = 250µA (Figure 9) 2 - 4 V
VDS = 80V, VGS= 0V - - 1 µA
VDS = 80V, VGS= 0V, TC = 150oC--50µA

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)
G(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

(ON)

G(10)VGS

G(TH)VGS

VGS = ±20V, VDS = 0 - - ±100 nA

= 22A, VGS = 10V (Figure 8) - - 0.080 Ω

VDD = 50Vwwwwwwwww, ID = 11A,
RL = 4.5Ω, VGS = 10V,
RGS = 25Ω
(Figure 11)

r

- - 60 ns

-13-ns

-24-ns

-65-ns

f

-18-ns

- - 120 ns
= 0V to 20V VDD = 80V, ID≈ 22A,
= 0V to 10V - - 75 nC
= 0V to 2V - - 3.5 nC

θJC

TO-220 and TO-263 - - 62

θJA

RL = 3.64Ω
I

= 1mA

g(REF)

(Figure 11)

- - 150 nC

- - 1.5

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SDISD
rr

NOTE:

2. Pulse Test: Pulse Duration = 300µs maximum, duty cycle = 2%.

4-500

= 22A - - 1.5 V

ISD = 22A, dISD/dt = 100A/µs - - 200 ns

RFP22N10, RF1S22N10SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0

25 50 75 100

0

TC, CASE TEMPERATURE (oC)

Unless otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

100

ID MAX (CONTINUOUS)

TJ = MAX RATED
SINGLE PULSE

= 25oC

T

C

150

175

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125 150 175

, CASE TEMPERATURE (oC)

T

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

100

VGS = 20V

10

OPERATION IN THIS AREA
MAY BE LIMITED BY r

1

, DRAIN CURRENT (A)

D

I

0.1
1

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

10

DC OPERATION

V

DSS(MAX)

= 100V

100

10

STARTING TJ = 150oC

, AVALANCHE CURRENT (A)

If R = 0
tAV = (L)(IAS)/(1.3 RATED BV

AS

I

If R ≠ 0

= (L/R)ln[(IAS R)/(1.3 RATED BV

t

AV

1

t

AV

STARTING TJ = 25oC

- VDD)

DSS

- VDD) + 1]

DSS

0.1 1 100.01

, TIME IN AVALANCHE (ms)

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

50

VGS = 10V

40

30

20

, DRAIN CURRENT (A)

D

I

10

VGS = 8V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC

VGS = 5V

VGS = 7V

VGS = 6V

VGS = 4V

50

PULSE DURATION = 80µs
V

= 15V

DS

DUTY CYCLE = 0.5% MAX.

40

30

20

, DRAIN CURRENT (A)

D

I

10

TC= -55oC

TC = 175oC

TC = 25oC

0

024 6810

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

0

02468

, GATE TO SOURCE VOLTAGE (V)

V

GS

FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSER CHARACTERISTICS

4-501

10

RFP22N10, RF1S22N10SM

Typical Performance Curves

2.0
ID = 250µA

1.5

1.0

0.5

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0

-50 0
T

J

50

, JUNCTION TEMPERATURE (oC)

Unless otherwise Specified (Continued)

100

150 200

FIGURE 7. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

1.50
VGS = VDS, ID = 250µA

1.25

1.00

0.75

VOLTAGE

0.50

0.25

NORMALIZED GATE THRESHOLD

0

-50 0 50 100 150 200
, JUNCTION TEMPERATURE (oC)

T

J

3.0
ID = 22A, VGS = 10V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.5

2.0

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150 200
T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 8. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2500

2000

1500

1000

C, CAPACITANCE (pF)

500

C

0

0 5 10 15 20

RSS

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz
C

ISS

C

RSS

C

OSS

= CGS + C

= C

GD

≈ CDS + C

C

C

OSS

GD

GS

ISS

25

FIGURE 9. NORMALIZED GATETHRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE

100

75

VDD= V

DSS

50

0.75V

0.50V

0.25V

DRAIN TO SOURCE VOLTAGE

I

G(REF)

I

G(ACT)

, DRAIN TO SOURCE VOLTAGE (V)
V

25

DS

0

20

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

4-502

SOURCE
VOLTAGE

RL = 4.55Ω

I

G(REF)

V

GS

DSS
DSS
DSS

t, TIME (µs)

GATE

TO

= 1mA

= 10V

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

10

DSS

7.5

5

2.5

0

, GATE TO SOURCE VOLTAGE (V)

GS

V

0.75V

0.50V

0.25V

VDD= V

DSS
DSS
DSS

80

I

G(REF)

I

G(ACT)

RFP22N10, RF1S22N10SM

S

Test Circuits and Waveforms

V

DS

t

I

AS

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

L

R

G

+

V

DD

-

DUT

0V

P

I

AS

0

t

0.01Ω

FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 13. UNCLAMPED ENERGY WAVEFORMS

BV

DSS

P

t

AV

V

DS

V

DD

t

ON

t

DS

10%

d(ON)

90%

50%

t

10%

r

PULSE WIDTH

V

DS

V

R

DUT

L

+

V

DD

-

0

V

GS

0

V

GS

R

GS

V

GS

FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

I

G(REF)

I

G(REF)

V

DS

R

L

V

GS

+

V

DD

-

DUT

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

10%

90%

0

FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS

4-503

RFP22N10, RF1S22N10SM

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However ,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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