Datasheet RF142 Datasheet (Conexant)

Page 1
RF142
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications
The RF142 Power Amplifier (PA) controller is a highly integrated, monolithic device optimized for use in 900 MHz, 1800 MHz, and 1900 MHz Global System For Mobile communications
®
(GSM®) and other Time Division Multiple Access (TDMA) applications. The control current output from the RF142 can be used to control the transmit power of a dual or multi-band Heterojunction Bipolar Transistor (HBT) PA.
The device consists of two sections: an RF detector, and a gain controller. The RF142, when combined with a PA and a coupler, forms a closed PA control loop, where the PA output power is controlled by a single analog reference voltage, typically supplied by the baseband.
The RF142 device package and pin configuration are shown in Figure 1. The signal pin assignments and functional pin descriptions are specified in Table 1. An RF142 block diagram is shown in Figure 2.
GND1
VREF
VMP
1
2
3
Features
RF PA controller for use with HBT PAs
50 dB detector dynamic range
Broadband, logarithmic power detector (800 MHz
to 2000 MHz)
Logarithmic RF power detector requires no
external diodes
Integrator and gain shaping block enhance loop
stability and linearity
Three-cell battery operation (2.7 V to 5.0 V)
Standby mode with 20 µA of current consumption
20-pin Thin Shrink Small Outline Package
(TSSOP)
Applications
Transmit power control for dual or multi-band
GSM digital cellular handsets
20
19
18
VCC2
VPCGS M
VPCDCS
VAPC+
VAPC-
ENABLE
RFPC+
RFPC-
GND2
VCC1
4
5
6
7
8
9
10
Figure 1. RF142 Pin Configuration – 20-Pin TSSOP
17
16
15
14
13
12
11
100774A-1_090700
BAND
AUX-
AUX+
CAP-
CAP+
NC
NC
Data Sheet Conexant Doc. No. 100774B Proprietary Information and Specifications are Subject to Change September 7, 2000
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RF142 Power Amplifier Controller
Table 1. RF142 Signal Description
Pin # Name Description Pin # Name Description
1 GND1 Ground 11 NC No connect
2 VREF Output reference voltage 12 NC No connect
3 VMP Midpoint voltage for gain shaper 13 CAP+ Integrator time constant Cap+
4 VAPC+ Tx power control positive polarity 14 CAP– Integrator time constant Cap–
5 VAPC– Tx power control negative polarity 15 AUX+ Aux output +
6 ENABLE Device enable (active high) 16 AUX– Aux output –
7 RFPC+ RF input to detector positive polarity 17 BAND
8 RFPC– RF input to detector negative polarity 18 VPCDCS 1800 MHz/1900 MHz power amplifier control voltage
9 GND2 Ground 19 VPCGSM 900 MHz power amplifier control voltage
10 VCC1 Power supply 20 VCC2 Vcc for the output stage
BAND
Band select. High selects VPCDCS as the output control pin; low selects VPCGSM as the output control pin.
VREF
VMP
AUX+
AUX–
Gain Shaper
Amp 1
CAP-
Amp 2
CAP+
Figure 2. RF142 Block Diagram

Technical Description

The RF142 dual-band PA controller is designed to control HBT PAs. It combines the functions of a broadband RF detector and error amplifier/integrator to provide transmit burst control for dual or multi-band HBT PAs. It has two separate dedicated output stages and pins for GSM900MHz PAs and GSM1800/1900 MHz PAs. The device, when connected to dual or multi-band HBT PAs with a coupler, forms a loop to control the transmit power in a dual or multi-band wireless application. The transmit power is controlled by a single balanced analog reference voltage input to the RF142.
The RF142 has low power consumption and operates off a three-cell battery pack (2.7 V to 5.0 V). Extremely low standby current of 20 µA maximizes the standby time of a GSM handset.
The absolute maximum ratings of the RF142 are provided in Table 2, the operating conditions are specified in Table 3, and electrical specifications are provided in Table 4. Figure 3 shows
VAPC- VAPC+
the diagram for a typical application circuit using the RF142 PA controller. Figure 4 shows the package dimensions for the 20­pin TSSOP device and Figure 5 provides the tape and reel dimensions.
RF Detector. An external RF coupler is required at the PA output to couple the RF output from the PA to the RF logarithmic detector input. The input to the logarithmic detector must be within the range –40 dBm to +10 dBm. The coupled signal is fed to the input of the RF power detector. The output from the detector is a DC voltage that is proportional to the RF power (in dBm) at the RFPC input to the device. The dynamic range of the detector is 50 dB.
Integrating Error Amplifier. The integrating error amplifier (Amp2) amplifies and integrates the voltage difference between the detector output and the power control input, VAPC. The integrator time constant is set by the two external capacitors connected from AUX pins to the CAP pins.
Logarithmic
Detector
DC Bias
Circuitry
ENABLE
VPCGSM
VPCDCS
RFPC+ RFPC–
VCC2 VCC1 GND
C013
2 Conexant 100774A September 7, 2000 Proprietary Information and Specifications are Subject to Change
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Power Amplifier Controller RF142
Gain Shaper. The output of the integrator is fed to the gain shaping circuit that drives the gain control input of the external RF PA. The midpoint voltage of the PA control voltage VPC, is determined by the VMP input. The VMP input is obtained by connecting a resistor divider to the 2.4 V reference output, VREF. The integrator in the integrating error amplifier is used to stabilize the loop.
The maximum voltage obtainable on VPCGSM and VPCDCS is generally 1 V below VCC2 (pin 20). Therefore, it may be more desirable to use a higher voltage than VCC.
Output Stages. Each of the two output stages is dedicated to a frequency band: one for GSM900MHz and one for GSM1800/PCS1900 MHz. The selection of the output stage is determined by the BAND select signal. A high signal selects the VPCDCS as the output pin and a low signal selects VPCGSM
Table 2. Absolute Maximum Ratings
Parameter Minimum Maximum Units
Storage Temperature –40 +125 °C
Supply Voltage –0.3 5.0 V
Power Dissipation -- 500 mW
Input Voltage Range –0.3 Vcc V
as the output pin. When either output is inactive, its residual output level is extremely low to ensure that the inactive PA is completely off.
DC Bias Block. The DC bias block provides voltage bias to the whole chip, which may be put in standby mode using the ENABLE digital input control pin (pin 6). The ENABLE pin is compatible with TTL levels. When the ENABLE pin is driven high, the device is enabled.

Electro-Static Discharge (ESD) Sensitivity

The RF142 is a static sensitive electronic device. Do not operate or store it near strong electrostatic fields. Take proper ESD precautions.
Table 3. RF142 Recommended Operating Conditions
Parameter Minimum Typical Maximum Units
Supply Voltage (Vcc) 2.7 3.6 4.8 V
Operating Temperature –30 +25 +85
°C
Table 4. RF142 Electrical Characteristics (1 of 2)
(TA = 25 °°°°C, Vcc = 3.6 V)
Parameter Symbol Test Condition Min Typ Max Units
Detector frequency range f 800 2000 MHz
Detector monotonic dynamic range 50 dB
Detector gain 15 mV/dB
Detector stability
Detector non-linearity error
VAPC common mode range 1.35 V
VAPC differential range
VAPC input impedance ZVAPC 20//5
VREF VREF 2.2 2.4 2.6 V
GSM Maximum Control Voltage VPCGSM
DCS Maximum Control Voltage VPCDCS
Maximum input power and over temperature range. Minimum input power and over temperature range.
RFPC ± from –40 dBm to +8 dBm
Band <= 0.8 V Ivpcgsm <= 75 mA
Band >= 1.90 V Ivpcdcs <= 50 mA
±1
Vcc-1.1 Vcc-1.0 Vcc-0.9 V
Vcc-1.1 Vcc-1.0 Vcc-0.9 V
±0.5
±3
± 2
Vp-p
dB dB
dB
k//pF
100774A Conexant 3
Proprietary Information and Specifications are Subject to Change September 7, 2000
Page 4
RF142 Power Amplifier Controller
Table 4. RF142 Electrical Characteristics (2 of 2)
(TA = 25 °°°°C, Vcc = 3.6 V)
Parameter Symbol Test Condition Min Typ Max Units
GSM Maximum Sink/Source Control Current Ivpcgsm BAND <= 0.8 V 90 100 110 mA
DCS Maximum Sink/Source Control Current Ivpcdsc BAND >= 1.90 V 70 80 90 mA
VPCGSM off voltage
ENABLE = high
0.1 V
BAND = low
VPCDCS off voltage
ENABLE = high
0.1 V
BAND = high
Control output noise GSM and DCS 12
nV/Hz
Error amplifier gain (Note) Low gain on shaper 35 40 44 dB
Auxiliary amplifier gain 25 28 31 dB
Standby current ISTDBY ENABLE = low 20
µA
Supply current ICC VPCGSM and VPCDCS source current = 0 mA 58 75 mA
BAND and ENABLE VIH VIH 1.9 V
BAND and ENABLE VIL VIL 0.8 V
Note. Included Gain Shaper
VPA
GND
FEEDBACK TO MIXER
TXDCS
TXGSM
GND
DCSIN
GND
GSMIN
GND
VCC
DCSAPC
Dual Band
GND
PA
VCC
GSMAPC
GND
DCSOUT
GND
GSMOUT
GND
T/R SW
DIPLEXER
T/R SW
FILTER
TO
ANTENNA
BAND
ENABLE
VPCDCS
VPCGSM
RFPC+
RFPC-
VCC1 VCC2
GND
PAEN
PA RAMP CONTROL
VPAC
C473
VREF
VMP
AUX+
AUX-
Amp 1
CAP-
Gain
Shaper
CAP+
Amp 2
RF142
VAPC-
Logarithmic
Detector
DC Bias Circuitry
VAPC+
Figure 3. Typical RF142 Application Circuit
4 Conexant 100774A September 7, 2000 Proprietary Information and Specifications are Subject to Change
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Power Amplifier Controller RF142
0.65 mm
TOP VIEW
Pin #1 indicator
6.50±0.10 mm
6.40 mm
0.24+0.06/-0.05 mm
SIDE VIEW
1.00 mm Ref
4.40±0.10 mm
END VIEW
Figure 4. RF142 Package Dimensions – 20-Pin TSSOP
1.00+0.5/-0.2 mm
1.20 mm max
0.10±0.05 mm
C003a
Pin #1
indicator
1.20
8.00 ± 0.10
4.00
6.75 ± 0.10
4.00 ± 0.10
o
8
1.50 ± 0.10
0.292 ± 0.013
Max 7o Max
1.70 ± 0.10
2.00 ± 0.05
1.50 ± 0.25
7.05 ± 0.10
Figure 5. RF142 Tape and Reel Dimensions
1.75 ± 0.10
5.50 ± 0.05
12.00 +0.30/-0.10
Notes:
1. Carrier tape material: black conductive polycarbonate
2. Cover tape material: transparent conductive PSA
3. Cover tape size: 9.3 mm width
4. Tolerance: .XX = ±0.10
5. Quantity: 2500 per reel
6. All measurements are in millimeters
C879
100774A Conexant 5
Proprietary Information and Specifications are Subject to Change September 7, 2000
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RF142 Power Amplifier Controller

Ordering Information

Model Name
Manufacturing Part
Product Revision
Number
GSM and PCS PA Controller RF142
© 2000, Conexant Systems, Inc.
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Page 7
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