Datasheet NTE466 Datasheet (NTE)

NTE466

Silicon N–Channel JFET Transistor

Chopper, High Speed Switch

Absolute Maximum Ratings:

Drain–Source Voltage, V
Drain–Gate Voltage, V
Reverse Gate–Source Voltage, V
Forward Gate Current, I
Total Device Dissipation (T

Derate Above 25°C 2.4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

DS

DG

G(f)

= +25°C), P

A

GSR

D

stg

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

360mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate–Source Breakdown Voltage V
Gate Reverse Current I

Gate–Source Cutoff Voltage V
Drain Cutoff Current I

ON Characteristics

Zero–Gate–Voltage Drain Current I
Drain–Source ON–Voltage V

Small–Signal Characteristics

Drain–Source “ON” Resistance r
Input Capacitance C
Reverse Transfer Capacitance C
Switching Characteristics (Note 2)
Turn–On Delay Time t
Rise Time t
Turn–Off Time t

(BR)GSSIG

GS(off)VDS

D(off)

DS(on)ID

DS(on)

d(on)

GSS

DSS

iss
rss

r

off

= 1A, VDS = 0 –40 – – V
VGS = –20V, VDS = 0 – – 0.25 nA
VGS = –20V, VDS = 0, TA = +150°C – – 0.5 µA

= 15V, ID = 0.5nA –4 – –10 V
VDS = 15V, VGS = –10V – – 0.25 nA
VDS = 15V, VGS = –10V, TA = +150°C – – 0.5 µA

VDS = 15V, VGS = 0, Note 1 50 – – mA

= 20mA, VGS = 0 – – 0.75 V

VGS = 0, ID = 0, f = 1kHz – – 25 Ω
VDS = 0, VGS = –10V, f = 1MHz – – 18 pF
VDS = 0, VGS = –10V, f = 1MHz – – 0.8 pF

VDD = 10V, I
V

GS(on)

= 0, V

D(on)

GS(off)

= 20mA,

= –10V

– – 6 ns
– – 3 ns
– – 25 ns

Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle ≤ 10%.
Note 2. The I

values are nominal; exact values vary slightly with transistor parameters.

D(on)

.210 (5.33)

Max

.500

(12.7)

Min

.230 (5.84) Dia Max

.195 (4.95) Dia Max

.030 (.762) Max

Source

.018 (0.45)

Drain

Gate

45°

.041 (1.05)