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NTE395
Silicon PNP Transistor
Wide Band Linear Amplifier
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Power Dissipation (TA = +25°C), P
Power Dissipation (TC = +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
CBO
CEO
EBO
tot
tot
J
stg
thJC
thJA
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
225mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
360mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
485°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
775°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Cutoff Current I
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Static Forward Current Transfer Ratio h
Base–Emitter Voltage V
Knee Voltage V
Transition Frequency f
Maximum Oscillation Frequency f VCE = 15V, IC = 10mA – 6.5 – GHz
Output Capacitance C
CBO
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
21E
BE
CEKIC
T
22b
VCB = 15V, IE = 0 – – 50 nA
= 100µA, IE = 0 30 – – V
= 5mA, IB = 0 25 – – V
= 10µA, IC = 0 3 – – V
VCE = 10V, IC = 10mA, Note 1 20 – –
VCE = 10V, IC = 10mA – 0.75 – V
= 20mA, Note 2 – 0.8 – V
VCE = 15V, IC = 10mA 1.4 2.3 – GHz
VCB = 15V, IE = 0, f = 1MHz – 1.1 – pF
Note 1. Pulsed.
Note 2. V
tested with IC = 100ma and IB = values for which IC = 110mA at VCE = 1V.
CEK
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Power Gain VCE = 15V, IC = 10mA, f = 800MHz – 10 – dB
Wide Band Power Gain G
Noise Figure NF VCE = 15V, IC = 3mA, f = 200MHz – 2.5 – dB
.190
(4.82)
f = 40 to 860MHz, RS = RL = 75Ω – 16 – dB
P
VCE = 15V, IC = 10mA, f = 800MHz – 3.5 – dB
VCE = 15V, IC = 10mA, f = 200MHz – 3.0 – dB
VCE = 15V, IC = 10mA, f = 800MHz – 4.0 – dB
.220 (5.58) Dia Max
.185 (4.7) Dia Max
.030 (.762) Max
.500
(12.7)
Min
E
.018 (0.45)
B
C
45°
Case
.040 (1.02)
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