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NTE480
Silicon NPN Transistor
RF Power Output for Broadband Amp,
= 40W @ 512MHz
P
O
Description:
The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband
applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions.
Features:
D Designed for UHF Commercial Equipment
D 38W with Greater than 5.8dB Gain
D Withstands 20:1 VSWR Min., All Phase Angles
D Tuned Q Technology
D Diffused Emitter Resistors
Absolute Maximum Ratings
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Maximum Collector Current, I
Total Device Dissipation (At +25°C), P
Operating Junction Temperature, T
Storage Temperature Range, T
: (TC = +25°C unless othrwise specified)
CBO
CEO
EBO
C
tot
J
stg
Thermal Resistance, Junction–to–Case, R
Electrical Characteristic
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
DC Current Gain h
: (TC = +25°C unless otherwise specified)
(BR)CEOIC
V
(BR)CESIC
(BR)EBOIE
CES
FE
+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
= 50mA, IB = 0, Note 1 16 – – V
= 15mA, VBE = 0, Note 1 36 – – V
= 5mA, iC = 0 4 – – V
VCE = 12.5V, VBE = 0 – – 5 mA
VCE = 5V, IC = 1A 20 – –
1.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
117W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulsed through 25mH indicator.
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Electrical Characteristic (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Output Power P
Power Gain P
Impedance Z
Output Capacitance C
.405
(10.3)
Min
VCE = 12.5V, f = 470MHz 38 40 – W
O
VCE = 12.5V, f = 470MHz 5.8 – – dB
G
VCE = 12.5V, Pi = 10W, f = 470MHz – 2– j1.3 – Ω
s
Z
cl
VCB = 12.5V, IE = 0, f = 1MHz – 95 – pF
ob
.205 (5.18)
.215 (5.48)
– 1.6– j1.8 – Ω
.122 (3.1) Dia
EB
.160 (4.06)
CE
.155 (3.94)
.500 (12.7) Dia
.005 (0.15)
.270
(6.85)
.725 (18.43)
.975 (24.78)
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