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NTE456
N−Channel Silicon JFET
General Purpose Amp, Switch
TO72 Type Package
Description:
The NTE456 is an N−Channel junction silicon field−effect transistor in a TO72 type package designed
for general purpose amplifier and switching applications.
Absolute Maximum Ratings:
Drain−Source Voltage, V
Drain−Gate Voltage, V
Gate−Source Voltage, V
Drain Current, I
D
Total Device Dissipation (T
DS
DG
GS
= +255C), P
A
Derate Above 255C 2mW/5C.......................................................
Operating Junction Temperature, T
Storage Temperature Range, T
stg
D
J
−655C to +2005C........................................
30V..........................................................
30V............................................................
−30V.........................................................
15mA.................................................................
300mW.........................................
+1505C...............................................
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate−Source Breakdown Voltage V
Gate Reverse Current I
Gate−Source Cutoff Voltage V
Gate−Source Voltage V
ON Characteristics
Zero−Gate−Voltage Drain Current I
Static Drain−Source On Resistance r
(BR)GSSVDS
DS(on)
GSS
GS(off)VDS
GS
DSS
= 0, IG = −10 A −30 − − V
VGS= −15V, VDS = 0 − − −0.1 nA
VGS= −15V, VDS = 0, TA = +1505C − − −100 nA
= 15V, ID = 0.1nA − − −6 V
VDS = 15V, ID = 200 A −1.0 − −5.0 V
VDS = 15V, VGS = 0 2.0 − 6.0 mA
VDS = 0, VGS = 0 − 400 − 5
Rev. 10−13
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Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Small−Signal Characteristics
Forward Transfer Admittance
Common Source
Output Admittance Common Source |yos| VDS = 15V, VGS = 0, f = 1kHz − − 20 mhos
Input Capacitance C
Reverse Transfer Capacitance C
Common−Source Output
Capacitance
Functional Characteristics
Noise Figure NF VDS = 15V, VGS = 0, RS = 1M5 , f =
|yfs| VDS = 15V, VGS = 0, f = 1kHz, Note 1 2000 − 5000 mhos
VDS = 15V, VGS = 0, f = 1kHz − 4.5 6.0 pF
iss
VDS = 15V, VGS = 0, f = 1kHz − 1.2 2.0 pF
rss
C
osp
VDS = 15V, VGS = 0, f = 30MHz − 1.5 − pF
− − 2.5 dB
100Hz
Note 1. Pulse test: Pulse Width = 630ms, Duty Cycle = 10%.
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.500
(12.7)
Min
.018 (0.45) Dia
Drain
455
.030 (.762)
D
G
S
Source
Gate
.040 (1.02)
Case
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