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NTE455
N−Channel Silicon Dual−Gate MOS Field Effect Transistor
(MOSFET)
Description:
The NTE455 is an N−Channel silicon dual−gate MOSFET designed for use as an RF amplifier in UHF
TV tuners. This device is especially recommended for use in half wave length resonator type tuners.
Features:
D Low Reverse Transfer Capacitance: C
D High Power Gain: G
= 18dB Typ
ps
= 0.02pF Typ
rss
D Low Noise Figure: NF = 3.8dB Typ
Absolute Maximum Ratings:
Drain−Source Voltage, V
DSX
Gate1−Source Voltage, V
Gate2−Source Voltage, V
Drain Current, I
D
Total Power Dissipation, P
Maximum Channel Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Zero−Gate Voltage Drain Current I
Forward Transfer Admittance |Yfs| VDS = 10V, V
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Power Gain G
Noise Figure NF VDS = 10V, V
Gate−Source Cutoff Voltage V
Gate Reverse Current I
Drain−Source Breakdown Voltage BV
(TA = +25C unless otherwise specified)
G1S
G2S
D
ch
stg
(TA = +25C unless otherwise specified)
DSS
G1S(off)VDS
V
G2S(off)
G1SS
I
G2SS
VDS = 10V, V
VDS = 10V, V
iss
VDS = 10V, V
oss
VDS = 10V, V
rss
VDS = 10V, V
ps
VDS = 0, V
VDS = 0, V
DSXVG1S
= 10V, V
= V
D
G2
G1
S, Case
−55 to +125C..........................................
= 4V, V
G2S
= 4V, ID = 10mA, f = 1kHz 18 22 − ms
G2S
= 4V, ID = 10mA, f = 1MHz 1.5 2.0 3.5 pF
G2S
= 4V, ID = 10mA, f = 1MHz 0.5 1.1 1.5 pF
G2S
= 4V, ID = 10mA, f = 1MHz − 0.02 0.03 pF
G2S
= 4V, ID = 10mA, f = 900MHz 15 18 22 dB
G2S
= 4V, ID = 10mA, f = 900MHz − 3.8 5.5 dB
G2S
= 4V, ID = 10A − − 2.0 V
G2S
= 10V, V
G1S
= 10V, V
G2S
= −2V, ID = 10A 20 24 − V
G2S
= 0 0.5 − 20 mA
G1S
− − −0.7 V
= 0 − − 20 nA
G2S
= 0 − − 20 nA
G1S
20V.........................................................
10V.......................................................
10V.......................................................
25mA.................................................................
200mW......................................................
+125C...............................................
Rev. 1−21
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G
2
.098 (2.5) Max
.027 (0.70)
G
1
.157 (4.0)
Typ
.039 (1.0)
D
.393 (10.0)
S
Min
.007 (0.20) Typ
.157 (4.0) Dia Max
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