Datasheet NTE45, NTE44 Specification

NTE44 (NPN) & NTE45 (PNP)

Silicon Complementary Transistors

Dual, Bias Amp, High Gain,

Low Noise, Common Base

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector-Base Voltage, V

Collector-Emitter Voltage, V

Emitter-Base Voltage, V

Collector Current, I

C

Collector Power Dissipation (Per Unit), P

Total Power Dissipation, P

Junction Temperature, T

Storage Temperature Range, T

Note 1. NTE44 is a discontinued device and no longer available.

CBO

CEO

EBO

C

T

J

stg

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

-55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector-Emitter Breakdown Voltage V

Collector-Cutoff Current I

Emitter-Cutoff Curent I

DC Current Gain h

Collector-Emitter Saturation Voltage V

Base-Emitter Voltage Differetial V

Collector Current Ratio IC2/I

Transistion Frequency f

Collector Output Capacitance C

Noise Figure NF VCE = 6V, IE = 0.3,

(TA = +25°C unless otherwise specified)

(BR)CEOIC

CBO

I

CEO

EBO

FE

CE(sat)IC

BE1-VBE2VCE

C1

T

ob

= 100μA, RBE =∞ 100 - - V

VCB = 100V, IE = 0 - - 0.1 μA

VCE = 100V, RBE =∞ - - 10 μA

VEB = 5V, IC = 0 - - 0.1 μA

VCE = 6V, IC = 1mA 400 - 800

= 10mA, IB = 1mA - - 0.3 V

= 6V, IC = 1mA - 1 10 mV

VCE = 6V, IC1 = 1mA 0.8 0 1.25

VCE = 6V, IE = 1mA - 100 - MHz

VCB = 6V, IE = 0, f = 1MHz - 3 - pF

f = 100Hz, R

= 1kΩ

G

- 0.6 - dB

.320 (8.13)

Max

.220

(5.59)

Max

BCECB

.414

(10.52)

Max

15

.050 (1.27)

.142 (3.6) Max