Datasheet NTE43, NTE42 Specification

Page 1
NTE42 (NPN) & NTE43 (PNP)
Silicon Complementary Transistors
Dual, Differential Amp, High Gain,
Low Noise, Common Emitter
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
CollectorBase Voltage, V CollectorEmitter Voltage, V EmitterBase Voltage, V Collector Current, I
C
Collector Power Dissipation (Per Unit), P Total Power Dissipation, P Junction Temperature, T Storage Temperature Range, T
EBO
C
T
J
stg
50V.......................................................
50V......................................................
5V..........................................................
100mA.............................................................
200mW.........................................
400mW......................................................
+125C.........................................................
55 to +125C..........................................
Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
CollectorEmitter Breakdown Voltage V
CollectorBase Breakdown Voltage V
EmitterBase Breakdown Voltage V
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CollectorCutoff Current I
I
EmitterCutoff Current I
DC Current Gain h
CollectorEmitter Saturation Voltage V
BaseEmitter Voltage Differential V
Small Signal Current Gain Ratio h
CE(sat)IC
BE1−VBE2VCE
fe1/hfe2
Transistion Frequency f
Collector Output Capacitance C
CBO
CEO
EBO
FE
T
ob
= 100A, RBE = 50 V
= 10A, IE = 0 50 V
= 10A, IC = 0 5 V
VCB = 35V, IE = 0 0.1 A
VCE = 35V, RBE = 10 A
VEB = 2V, IC = 0 0.1 A
VCE = 6V, IC = 1mA 400 800
= 10mA, IB = 1mA 0.6 V
= 6V, IC = 1mA 1 10 mV
VCE = 6V, IC = 1mA 0.8 0.98 1.0
VCE = 6V, IE = 1mA 150 MHz
VCB = 6V, IE = 0, f = 1MHz 2.5 pF
Noise Figure NF VCE = 6V, IE = 0, f = 1kHz,
R
= 10k
G
Noise Voltage
RMS
Peak NV
NV
VCE = 10V, IE = 1mA,
1
= 100k, GV = 80dB
R
2
g
0.5 dB
100 mV
0.5 V
Rev. 5−13
Page 2
.320 (8.13)
Max
.220
(5.59)
Max
BCECB
.414
(10.52)
Max
15
.050 (1.27)
.142 (3.6) Max
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