
NTE42 (NPN) & NTE43 (PNP)
Silicon Complementary Transistors
Dual, Differential Amp, High Gain,
Low Noise, Common Emitter
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, V
Collector−Emitter Voltage, V
Emitter−Base Voltage, V
Collector Current, I
C
Collector Power Dissipation (Per Unit), P
Total Power Dissipation, P
Junction Temperature, T
Storage Temperature Range, T
CBO
CEO
EBO
C
T
J
stg
50V.......................................................
50V......................................................
5V..........................................................
100mA.............................................................
200mW.........................................
400mW......................................................
+125C.........................................................
−55 to +125C..........................................
Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector−Emitter Breakdown Voltage V
Collector−Base Breakdown Voltage V
Emitter−Base Breakdown Voltage V
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
Collector−Cutoff Current I
I
Emitter−Cutoff Current I
DC Current Gain h
Collector−Emitter Saturation Voltage V
Base−Emitter Voltage Differential V
Small Signal Current Gain Ratio h
CE(sat)IC
BE1−VBE2VCE
fe1/hfe2
Transistion Frequency f
Collector Output Capacitance C
CBO
CEO
EBO
FE
T
ob
= 100A, RBE = 50 − − V
= 10A, IE = 0 50 − − V
= 10A, IC = 0 5 − − V
VCB = 35V, IE = 0 − − 0.1 A
VCE = 35V, RBE = − − 10 A
VEB = 2V, IC = 0 − − 0.1 A
VCE = 6V, IC = 1mA 400 − 800
= 10mA, IB = 1mA − − 0.6 V
= 6V, IC = 1mA − 1 10 mV
VCE = 6V, IC = 1mA 0.8 0.98 1.0
VCE = 6V, IE = 1mA − 150 − MHz
VCB = 6V, IE = 0, f = 1MHz − 2.5 − pF
Noise Figure NF VCE = 6V, IE = 0, f = 1kHz,
R
= 10k
G
Noise Voltage
RMS
Peak NV
NV
VCE = 10V, IE = 1mA,
1
= 100k, GV = 80dB
R
2
g
− 0.5 − dB
− 100 − mV
− 0.5 − V
Rev. 5−13