Datasheet TCG41, NTE40 Specification

NTE40 (NPN) & NTE41 (PNP)

Silicon Complementary Transistors

Dual, Differential Amp, High Gain,

Low Noise, Common Emitter

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector−Base Voltage, V

Collector−Emitter Voltage, V

Emitter−Base Voltage, V

Collector Current, I

C

Collector Power Dissipation (Per Unit), P

Total Power Dissipation, P

Junction Temperature, T

Storage Temperature Range, T

CBO

CEO

EBO

C

T

J

stg

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−55° top +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector−Emitter Breakdown Voltage V

Collector−Cutoff Current I

Emitter−Cutoff Curent I

DC Current Gain h

Collector−Emitter Saturation Voltage V

Base−Emitter Voltage Differential V

Small Signal Current Gain Ratio h

Transistion Frequency f

Collector Output Capacitance C

Noise Figure NF VCE = 6V, IE = 0, f = 1MHz,

(TA = +25°C unless otherwise specified)

(BR)CEOIC

CBO

I

CER

EBO

FE

CE(sat)IC

BE1−VBE2VCE

fe1/hfe2

T

ob

= 100μA, RBE =∞ 100 − − V

VCB = 70V, IE = 0 − − 0.1 μA

VCE = 100V, RBE = 100kΩ − − 10 μA

VEB = 2V, IC = 0 − − 0.1 μA

VCE = 6V, IC = 1mA 400 − 800

= 10mA, IB = 1mA − − 0.6 V

= 6V, IC = 1mA − 1 10 mV

VCE = 6V, IC = 1mA 0.8 0.98 1.0

VCE = 6V, IE = 1mA − 150 − MHz

VCB = 6V, IE = 0, f = 1MHz − 2.5 − pF

= 100kΩ

R

G

− 0.5 − dB

.320 (8.13)

Max

.220

(5.59)

Max

BCECB

.414

(10.52)

Max

15

.050 (1.27)

.142 (3.6) Max