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NTE392 (NPN) & NTE393 (PNP)
Silicon Complementary Transistors
General Purpose
TO−3PN Type Package
Description:
The NTE392 (NPN) and NTE393 (PNP) are silicon complementary transistors in a TO−3PN type
package designed for general purpose power amplifier and switching applications.
Features:
D 25A Collector Current
D Low Leakage Current: I
D Excellent DC Gain: h
FE
D High Current Gain Bandwidth Product: h
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
EB
C
Continuous 25A..................................................................
Peak (Note 1) 40A................................................................
Continuous Base Current, I
Total Power Dissipation (T
Derate Above 25C 1W/C.........................................................
Operating Junction Temperature Range, T
Storage Temperature Range, T
Unclamped Inductive Load, E
Thermal Resistance, Junction−to−Case, R
Thermal Resistance, Junction−to−Ambient, R
= 1mA @ VCE = 60V
CEO
= 40 Typ @ 15A
CEO
CB
B
= +25C), P
C
stg
SB
D
= 3 Min @ IC = 1A, f = 1MHz
fe
J
thJC
thJA
100V.....................................................
100V........................................................
5V...........................................................
5A..........................................................
125W...........................................
−65 to +150C..................................
−65 to +150C..........................................
90mJ....................................................
1.0C/W.....................................
35.7C/W..................................
Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle 10%.
Rev. 2−15
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Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage V
Collector−Emitter Cutoff Current I
Emitter−Base Cutoff Current I
CEO(sus)IC
CEO
I
CES
EBO
= 30mA, IB = 0, Note 2 100 − − V
VCE = 60V, IB = 0 − − 1 mA
VCE = 100V, VEB = 0 − − 0.7 mA
VEB = 5V, IC = 0 − − 1 mA
ON Characteristics (Note 2)
DC Current Gain h
FE
IC = 1.5A, VCE = 4V 25 − −
IC = 15A, VCE = 4V 15 − 75
Collector−Emitter Saturation Voltage V
CE(sat)IC
= 15A, IB = 1.5A − − 1.8 V
IC = 25A, IB = 5A − − 4 V
Base−Emitter ON Voltage V
BE(on)IC
= 15A, VCE = 4V − − 2.0 V
IC = 25A, VCE = 4V − − 4.0 V
Dynamic Characteristics
Small−Signal Current Gain h
Current−Gain Bandwidth Product f
fe
T
IC = 1A, VCE = 10V, f = 1kHz 25 − −
IC = 1A, VCE = 10V,
f = 1MHz, Note 3
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Note 3. f
= |hfe| f
T
test
3 − − MHz
.189 (4.8)
.787
(20.0)
.614 (15.6)E
.590
(15.0)
.138
(3.5)
Dia
.889
(22.6)
BCE
.215 (5.45)
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