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NTE387
Silicon NPN Transistor
Power Amp, Switch
Features:
D High Collector–Emitter Sustaining Voltage
D High DC Current Gain
D Low Collector–Emitter Saturation Voltage
D Fast Switching Times
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Continuous 50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 100A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
Total Device Dissipation (TC = +25°C), P
Derate Above 25°C 1.43W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
CEO
CB
EB
B
D
J
stg
thJC
150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.70°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched pairs are available upon request (NTE387MP). Matched pairs have their gain
specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
CEO(sus)IC
CEO
I
CEX
EBO
= 50mA, IB = 0, Note 2 150 – – V
VCE = 75V, IB = 0 – – 50 µA
VCE = 180V, V
VCE = 180V, V
VBE = 6V, IC = 0 – – 100 µA
= 1.5V – – 10 µA
EB(off)
= 1.5V, TC = +1 50°C – – 1.0 µA
EB(off)
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain h
FE
VCE = 4V, IC = 1A 50 – –
VCE = 4V, IC = 20A 30 – 120
VCE = 4V, IC = 50A 10 – –
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 20A, IB = 2A – – 1 V
IC = 50A, IB = 10A – – 3 V
Base–Emitter Saturation Voltage V
BE(sat)IC
= 20A, IB = 2A – – 1.8 V
IC = 50A, IB = 10A – – 3.5 V
Base–Emitter ON Voltage V
BE(on)VCE
= 4V, IC = 20A
Dynamic Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
VCE = 10V, IC = 1A, f
T
VCB = 10V, IE = 0, f
ob
test
= 0.1MHz – – 600 pF
test
Switching Characteristics
Rise Time t
Storage Time t
Fall Time t
VCC = 80V, IC = 20A, IB1 = 2A, V
r
VCC = 80V, IC = 20A, IB1 = IB2 = 2A – – 0.80 µs
s
f
Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. fT = (hfe) test
– 1.8 V
–
= 10MHz, Note 3 30 – – MHz
= 5V – – 0.35 µs
BE(off)
– – 0.25 µs
.350 (8.89)
.215 (5.45)
Emitter
.430
(10.92)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.040 (1.02).312 (7.93) Min
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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